Study of barrier height and trap centers of Au/n-Hg3In2Te6 Schottky contacts by current-voltage (I-V) characteristics and deep level transient spectroscopy

2015 ◽  
Vol 117 (8) ◽  
pp. 085704 ◽  
Author(s):  
Yapeng Li ◽  
Li Fu ◽  
Jie Sun ◽  
Xiaozhen Wang
Keyword(s):  
Barrier Height ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Contacts ◽  
Current Voltage ◽  
Transient Spectroscopy

scholarly journals Current--Voltage, Capacitance--Voltage--Temperature, and DLTS Studies of Ni|6H-SiC Schottky Diode

2021 ◽  
Vol 55 (4) ◽  
pp. 388
Author(s):  
A. Rabehi ◽  
B. Akkal ◽  
M. Amrani ◽  
S. Tizi ◽  
Z. Benamara ◽  
...  
Keyword(s):  
Barrier Height ◽  
Schottky Diode ◽  
Ideality Factor ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Diodes ◽  
Double Barrier ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Transient Spectroscopy

In this paper, we give a systematical description of Ni|6H-SiC Schottky diode by current--voltage I(V) characteristics at room temperature and capacitance--voltage C(V) characteristics at various frequencies (10-800 kHz) and various temperatures (77-350oK). The I(V) characteristics show a double-barrier phenomenon, which gives a low and high barrier height (phiLbn=0.91 eV, phiHbn=1.55 eV), with a difference of Deltaphibn=0.64 eV. Also, low ideality factor nL=1.94 and high ideality factor nH=1.22 are obtained. The C-V-T measurements show that the barrier height phibn decreases with decreasing of temperature and gives a temperature coefficient alpha=1.0·10-3 eV/K and phibn(T=0 K)=1.32 eV. Deep-level transient spectroscopy (DLTS) has been used to investigate deep levels in the Ni|6H-SiC Schottky diode. The traps signatures such as activation energies Ea=0.50±0.07 eV, capture cross-section sigma=1.8·10-20 cm2, and defect concentration NT=6.2·1013 cm-3 were calculated from Arrhenius plots. Keywords: si1licon carbide, Schottky diodes, I-V, C-V-T, deep-level transient spectroscopy (DLTS).

Transport Properties and Conduction Band Offset of n-ZnO/n-6H-SiC Heterostructures

2006 ◽  
Vol 957 ◽  
Author(s):  
Yahya Alivov ◽  
Xiao Bo ◽  
Fan Qian ◽  
Daniel Johnstone ◽  
Cole Litton ◽  
...  
Keyword(s):  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Band Offset ◽  
Measured Temperature ◽  
Temperature Dependent ◽  
Conduction Band Offset ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy

ABSTRACTThe conduction band offset of n-ZnO/n-6H-SiC heterostructures fabricated by rf-sputtered ZnO on commercial n-type 6H-SiC substrates has been measured. Temperature dependent current-voltage characteristics, photocapacitance, and deep level transient spectroscopy measurements showed the conduction band offsets to be 1.25 eV, 1.1 eV, and 1.22 eV, respectively.

Z1/2- and EH6-Center in 4H-SiC: Not Identical Defects ?

2012 ◽  
Vol 717-720 ◽  
pp. 251-254 ◽  
Author(s):  
Bernd Zippelius ◽  
Alexander Glas ◽  
Heiko B. Weber ◽  
Gerhard Pensl ◽  
Tsunenobu Kimoto ◽  
...  
Keyword(s):  
Activation Energy ◽  
Electric Field ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Contacts ◽  
Double Peak ◽  
Carbon Vacancy ◽  
High Concentrations ◽  
Transient Spectroscopy ◽  
Dlts Spectra

Deep Level Transient Spectroscopy (DLTS) and Double-correlated DLTS (DDLTS) measurements have been conducted on Schottky contacts fabricated on n-type 4H-SiC epilayers using different contact metals in order to separate the EH6- and EH7-centers, which usually appear as a broad double peak in DLTS spectra. The activation energy of EH6(EC- ET(EH6) = 1.203 eV) turns out to be independent of the electric field. As a consequence, EH6is acceptor-like according to the missing Poole-Frenkel effect. Therefore, it can be excluded that the EH6-center and the prominent acceptor-like Z1/2-center belong to different charge states of the same microscopic defect as theoretically suggested. It is proposed that EH6is a complex containing a carbon vacancy and another component available at high concentrations. The activation energy of EH7(EC- ET(EH7) = 1.58 eV) has been evaluated indirectly by fitting the DLTS spectra of the EH6/7double peak taking the previously determined parameters of EH6into account.

scholarly journals Effect of the Schottky barrier height on the detection of midgap levels in 4H-SiC by deep level transient spectroscopy

2007 ◽  
Vol 102 (11) ◽  
pp. 113702 ◽  
Author(s):  
S. A. Reshanov ◽  
G. Pensl ◽  
K. Danno ◽  
T. Kimoto ◽  
S. Hishiki ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Deep Level Transient Spectroscopy ◽  
Schottky Barrier Height ◽  
Deep Level ◽  
Transient Spectroscopy

Process-Induced Defects in High-Purity GaAs

1982 ◽  
Vol 14 ◽  
Author(s):  
P. H. Campbell ◽  
O. Aina ◽  
B. J. Baliga ◽  
R. Ehle
Keyword(s):  
High Temperature ◽  
High Purity ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Levels ◽  
Schottky Contacts ◽  
High Temperature Annealing ◽  
Order Of Magnitude ◽  
Transient Spectroscopy ◽  
Induced Defects

ABSTRACTHigh temperature annealing of Si 3 N4 and SiO2 capped high purity LPE GaAs is shown to result in a reduction in the surface carrier concentration by about an order of magnitude. Au Schottky contacts made on the annealed samples were found to have severely degraded breakdown characteristics. Using deep level transient spectroscopy, deep levels at EC–.58eV, EC–.785eV were detected in the SiO2, capped samples and EC–.62eV, EC–.728eV in the Si3N4 capped Samples while none was detected in the unannealed samples.The electrical degradations are explained in terms of compensation mechanisns and depletion layer recombination-generation currents due to the deep levels.

Characterization of Deep Level Defects in 4h and 6H SIC Via DLTS, SIMS And MEV E-Beam Irradiation

1996 ◽  
Vol 423 ◽  
Author(s):  
J. P. Doyle ◽  
M. O. Aboelfotoh ◽  
M. K. Linnarsson ◽  
B. G. Svensson ◽  
A. Schöner ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Doping Concentration ◽  
Secondary Ion Mass Spectrometry ◽  
Deep Level ◽  
Schottky Contacts ◽  
Structural Defects ◽  
Beam Irradiation ◽  
Transient Spectroscopy ◽  
Secondary Ion

AbstractElectrically active defects in both 4H and 6H polytypes of SiC have been observed through the use of deep level transient spectroscopy (DLTS). Schottky contacts were grown by vapor phase epitaxy (VPE) with doping concentrations, the epitaxial layer having a doping concentration in the range of 1014 cm−3 to 1017cm−3. Numerous levels have been found in the as-grown n-type 6H-SiC samples and secondary ion mass spectrometry (SIMS) and MeV electron irradiation have been employed to corrrelate the defect levels to impurities or structural defects. In contrast, only a single level is observed in the as-grown 4H-SiC samples.

Grain Boundary Dopant and Heat Treatment Effects on the Electrical Properties of Polycrystalline ZnO

1995 ◽  
Vol 411 ◽  
Author(s):  
T. D. Chen ◽  
J.-R. Lee ◽  
H. L. Tuller ◽  
Y.-M. Chiang
Keyword(s):  
Heat Treatment ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Low Leakage ◽  
Current Voltage ◽  
Transient Spectroscopy

ABSTRACTSimplified varistor systems of bismuth- and cobalt-doped zinc oxide are studied. A prior study has shown that the distributions of bismuth segregation at the grain boundaries in such samples can be controlled by varying microstructure and heat treatment. Current-voltage and deep level transient spectroscopy measurements were done to evaluate the corresponding electrical properties. Low leakage and α values of ˜30 were attained, despite the nominal, twocomponent doping of these simplified varistors. Moreover, these samples show the signature defects that are found in many multi-dopant, commercial devices: two shallow bulk traps at ˜0.14 eV and ˜0.24 eV and one prominent interfacial trap at ˜1 eV.

DLTS Studies of Al Diffused n-Si

2010 ◽  
Vol 442 ◽  
pp. 393-397
Author(s):  
S. Siddique ◽  
M.M. Asim ◽  
F. Saleemi ◽  
S. Naseem
Keyword(s):  
Cross Section ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Dlts Spectrum ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Junction Formation ◽  
Transient Spectroscopy ◽  
Phosphorus Doped ◽  
Si Wafer

We have studied the electrical properties of Si p-n junction diodes by deep level transient spectroscopy (DLTS) measurements. The p-n junctions were developed on a Phosphorus doped Si by depositing Al and annealing at various temperatures. In order to confirm junction formation, current-voltage and capacitance-voltage measurements were made. Two deep levels at Ec-0.17 eV (E1) and Ec-0.44 eV (E2) were observed in the DLTS spectrum. These traps have been characterized by their capture cross-section, activation energy level and trap density. On the basis of these parameters, level E1 can be assigned as V-O complex and E2 as P-V complex. These traps are related to the growth of n-Si wafer and not due to Al diffusion.

Metal In-Diffusion during Fe and Co-Germanidation of Germanium

2007 ◽  
Vol 131-133 ◽  
pp. 47-52 ◽  
Author(s):  
Eddy Simoen ◽  
K. Opsomer ◽  
Cor Claeys ◽  
Karen Maex ◽  
Christophe Detavernier ◽  
...  
Keyword(s):  
Band Gap ◽  
Barrier Height ◽  
Rapid Thermal Annealing ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Reverse Current ◽  
Deep Levels ◽  
Schottky Barriers ◽  
Deep Acceptor ◽  
Transient Spectroscopy

In this paper, the deep levels occurring in Fe- or Co-germanide Schottky barriers on ntype Ge have been studied by Deep Level Transient Spectroscopy (DLTS). As is shown, no traps have been found for germanidation temperatures up to 500 oC, suggesting that in both cases no marked metal in-diffusion takes place during the Rapid Thermal Annealing (RTA) step. Deep acceptor states in the upper half of the Ge band gap and belonging to substitutional Co and Fe can be detected by DLTS only at higher RTA temperatures (TRTA). For the highest TRTA, deep levels belonging to other metal contaminants (Cu) have been observed as well. Simultaneously, the reverse current of the Schottky barriers increases with TRTA, while the barrier height is also strongly affected.

Sign in / Sign up

Export Citation Format

Share Document