Improvement of short circuit current of mono crystalline silicon solar cells

In this report we present series of experiments during which the short circuit current of mono crystalline silicon solar cell was improved step by step so as a consequence the efficiency was increased. At first, the front contact of solar cell was optimized to reduce the shadow loss and the series resistance. Then surface treatments were prepared by TMAH solution to reduce the total light reflectance and to improve the light trapping effect. Finally, antireflection coatings were deposited to passivate the front surface either by silicon nitride thin layer or to increase the collection probability by indium tin oxide layer, and to reduce the reflectance of light. As a result, solar cells of about 13% have been obtained, with the average open circuit voltage Voc about 527mV, with the fill factor about 68% and the short circuit current about 7.92 mA/cm2 under the irradiation density of 21 mW/cm2.

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Analytical Study of the Electrical Output Characteristics of c-Si Solar Cells by Cut and Shading Phenomena

Energies ◽

10.3390/en11123397 ◽

2018 ◽

Vol 11 (12) ◽

pp. 3397 ◽

Cited By ~ 1

Author(s):

Jong Lim ◽

Woo Shin ◽

Hyemi Hwang ◽

Young-Chul Ju ◽

Suk Ko ◽

...

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Crystalline Silicon ◽

Short Circuit ◽

Incident Light ◽

Short Circuit Current ◽

Open Circuit ◽

Si Solar Cell ◽

Si Solar Cells ◽

Electrical Output

Cut solar cells have received considerable attention recently as they can reduce electrical output degradation when the c-Si solar cells (crystalline-silicon solar cells) are shaded. Cut c-Si solar cells have a lower short-circuit current than normal solar cells and the decrease in short-circuit currents is similar to the shading effect of c-Si solar cells. However, the results of this study’s experiment show that the shadow effect of a c-Si solar cell reduces the V o c (open circuit voltage) in the c-Si solar cell but the V o c does not change when the c-Si solar cell is cut because the amount of incident light does not change. In this paper, the limitations of the electrical power analysis of the cut solar cells were identified when only photo current was considered and the analysis of the electric output of the cut c-Si solar cells was interpreted with a method different from that used in previous analyses. Electrical output was measured when the shaded and cut rates of c-Si solar cells were increased from 0% to 25, 50 and 75%, and a new theoretical model was compared with the experimental results using MATLAB.

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Measured and Simulated Temperature Dependence of A-Si:H Solar Cell Parameters

MRS Proceedings ◽

10.1557/proc-426-19 ◽

1996 ◽

Vol 426 ◽

Author(s):

H. Stiebig ◽

Th. Eickhoff ◽

J. Zimmer ◽

C. Beneking ◽

H. Wagner

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Temperature Dependence ◽

Crystalline Silicon ◽

Short Circuit ◽

Short Circuit Current ◽

Open Circuit ◽

Cell Parameters ◽

Crystalline Silicon Solar Cells ◽

Device Modelling

AbstractIn contrast to the successful application of analytic equations to the current-voltage behaviour of crystalline silicon solar cells in the dark and under AM1.5 illumination, the description of a-Si:H solar cells parameters requires device modelling concepts taking the full set of semiconductor equations into account. This in particular holds for the explanation of the temperature dependence (225–400K) of experimentally determined a-Si:H p-i-n solar cell parameters. Device modelling calculations show that the observed decrease of the short circuit current at AM 1.5 with lower T is much more effected by the additional charge trapped in the tail states and recharging of defect states than by the broadening of the gap. The induced electric field distortion blocks the extraction of photo generated holes. The open circuit voltage Voc increases with lower T which is caused by the same trapping effect.

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Measured and Simulated Temperature Dependence of A-Si:H Solar Cell Parameters

MRS Proceedings ◽

10.1557/proc-420-855 ◽

1996 ◽

Vol 420 ◽

Cited By ~ 12

Author(s):

H. Stiebig ◽

Th. Eickhoff ◽

J. Zimmer ◽

C. Beneking ◽

H. Wagner

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Temperature Dependence ◽

Crystalline Silicon ◽

Short Circuit ◽

Short Circuit Current ◽

Open Circuit ◽

Cell Parameters ◽

Crystalline Silicon Solar Cells ◽

Device Modelling

AbstractIn contrast to the successful application of analytic equations to the current-voltage behaviour of crystalline silicon solar cells in the dark and under AM 1.5 illumination, the description of a-Si:H solar cells parameters requires device modelling concepts taking the full set of semiconductor equations into account. This in particular holds for the explanation of the temperature dependence (225-400K) of experimentally determined a-Si:H p-i-n solar cell parameters. Device modelling calculations show that the observed decrease of the short circuit current at AM 1.5 with lower T is much more effected by the additional charge trapped in the tail states and recharging of defect states than by the broadening of the gap. The induced electric field distortion blocks the extraction of photo generated holes. The open circuit voltage Voc increases with lower T which is caused by the same trapping effect.

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Performance Dependence of (I-V) and (C-V) for Solar Cells on Environmental Conditions

JOURNAL OF ADVANCES IN PHYSICS ◽

10.24297/jap.v14i1.7315 ◽

2018 ◽

Vol 14 (1) ◽

pp. 5331-5351

Author(s):

A. M. Abd El-Maksood

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Dynamic Characteristics ◽

Environmental Conditions ◽

Crystalline Silicon ◽

Short Circuit ◽

Open Circuit ◽

Charge Carrier Concentration ◽

Crystalline Silicon Solar Cell ◽

Cell Parameters

The present paper is a trial to shed further light on the dependence performance of mono-crystalline silicon solar cell (photovoltaic cell) on the environmental conditions. In this concern, the static (I-V) and dynamic (C-V) characteristics measurement were studied in details under the effect of illumination type, intensity and wavelength, as well temperature on the physical and electrical parameters of solar cell. The dependence of cell parameters- extracted from (I-V) characteristic curves- open-circuit voltage (Voc), short-circuit current (Isc), fill-factor (FF), conversion efficiency (Î·) as well the series -and shunt-resistances (Rs and Rsh), on the intensity has been investigated for a wide illumination intensity range 1.0 - 70 mW/cm2. It was observed that, for illumination levels higher than 10 klux, the values of Voc, Rsh, FF and efficiency were shown to be saturated. Isc was shown to be increased linearly, while Rs decreased exponentially as a function of illumination level. On the other hand, considering the dynamic characteristics (C-V), a detailed study was carried out for solar cells biased on both the forward - and reverse modes at frequency range of 20 kHz - 140 kHz and different illumination - levels. From which, the barrier potential (Vbi) and doping (charge carrier) concentration (Na) were determined. Besides, the influence of temperature within the range from 30 up to 110 oC on both the static and dynamic characteristics was tested. From which, it is clear that Voc, maximum powers (Pmax), FF, Î· of the sample were shown to be temperature decreasing functions. Moreover, Isc has a feeble increasing temperature coefficient. Finally, the solar cell capacitance (C) and dissipation factor (D) rise with rising temperature in both bias voltage conditions, while, impedance (Z), quality factor (Q), and phase angle (Ï†) reduce with rising temperature.

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CdTe-Based Thin Film Solar Cells: Past, Present and Future

Energies ◽

10.3390/en14061684 ◽

2021 ◽

Vol 14 (6) ◽

pp. 1684

Author(s):

Alessandro Romeo ◽

Elisa Artegiani

Keyword(s):

Thin Film ◽

Solar Cells ◽

Solar Cell ◽

Short Circuit ◽

Short Circuit Current ◽

Short Circuit Current Density ◽

Open Circuit ◽

Early Years ◽

Solar Cell Efficiency ◽

Cell Efficiency

CdTe is a very robust and chemically stable material and for this reason its related solar cell thin film photovoltaic technology is now the only thin film technology in the first 10 top producers in the world. CdTe has an optimum band gap for the Schockley-Queisser limit and could deliver very high efficiencies as single junction device of more than 32%, with an open circuit voltage of 1 V and a short circuit current density exceeding 30 mA/cm2. CdTe solar cells were introduced at the beginning of the 70s and they have been studied and implemented particularly in the last 30 years. The strong improvement in efficiency in the last 5 years was obtained by a new redesign of the CdTe solar cell device reaching a single solar cell efficiency of 22.1% and a module efficiency of 19%. In this paper we describe the fabrication process following the history of the solar cell as it was developed in the early years up to the latest development and changes. Moreover the paper also presents future possible alternative absorbers and discusses the only apparently controversial environmental impacts of this fantastic technology.

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GaInP/GaAs/poly-Si Multi-Junction Solar Cells by in Metal Balls Bonding

Crystals ◽

10.3390/cryst11070726 ◽

2021 ◽

Vol 11 (7) ◽

pp. 726

Author(s):

Ray-Hua Horng ◽

Yu-Cheng Kao ◽

Apoorva Sood ◽

Po-Liang Liu ◽

Wei-Cheng Wang ◽

...

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Low Temperature ◽

Triple Junction ◽

Short Circuit ◽

Short Circuit Current ◽

Open Circuit ◽

Metal Line ◽

Solar Simulator ◽

Junction Solar Cell

In this study, a mechanical stacking technique has been used to bond together the GaInP/GaAs and poly-silicon (Si) solar wafers. A GaInP/GaAs/poly-Si triple-junction solar cell has mechanically stacked using a low-temperature bonding process which involves micro metal In balls on a metal line using a high-optical-transmission spin-coated glue material. Current–voltage measurements of the GaInP/GaAs/poly-Si triple-junction solar cells have carried out at room temperature both in the dark and under 1 sun with 100 mW/cm2 power density using a solar simulator. The GaInP/GaAs/poly-Si triple-junction solar cell has reached an efficiency of 24.5% with an open-circuit voltage of 2.68 V, a short-circuit current density of 12.39 mA/cm2, and a fill-factor of 73.8%. This study demonstrates a great potential for the low-temperature micro-metal-ball mechanical stacking technique to achieve high conversion efficiency for solar cells with three or more junctions.

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Study of Photoelectrochemical Solar Cell Using WSe2 Crystal

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.665.330 ◽

2013 ◽

Vol 665 ◽

pp. 330-335 ◽

Cited By ~ 1

Author(s):

Ripal Parmar ◽

Dipak Sahay ◽

R.J. Pathak ◽

R.K. Shah

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Fill Factor ◽

Short Circuit ◽

Short Circuit Current ◽

Electrical Energy ◽

Open Circuit ◽

Cell Parameters ◽

Photoelectrochemical Solar Cell ◽

Photoelectrochemical Solar Cells

The solar cells have been used as most promising device to convert light energy into electrical energy. In this paper authors have attempted to fabricate Photoelectrochemical solar cell with semiconductor electrode using TMDCs. The Photoelectrochemical solar cells are the solar cells which convert the solar energy into electrical energy. The photoelectrochemical cells are clean and inexhaustible sources of energy. The photoelectrochemical solar cells are fabricated using WSe2crystal and electrolyte solution of 0.025M I2, 0.5M NaI, 0.5M Na2SO4. Here the WSe2crystals were grown by direct vapour transport technique. In our investigations the solar cell parameters like short circuit current (Isc) and Open circuit voltage (Voc) were measured and from that Fill factor (F.F.) and photoconversion efficiency (η) are investigated. The results obtained shows that the value of efficiency and fill factor of solar cell varies with the illumination intensities.

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HIT Solar Cell With V2Ox Window Layer

MRS Advances ◽

10.1557/adv.2017.465 ◽

2017 ◽

Vol 2 (53) ◽

pp. 3147-3156 ◽

Cited By ~ 6

Author(s):

Erenn Ore ◽

Gehan Amaratunga ◽

Stefaan De Wolf

Keyword(s):

Solar Cell ◽

Physical Vapor Deposition ◽

Crystalline Silicon ◽

Layer Structure ◽

Short Circuit ◽

Short Circuit Current ◽

Open Circuit ◽

Window Layer ◽

Limiting Factors ◽

Vapor Deposition Technique

ABSTRACTIn the conventional crystalline silicon heterojunction solar cell with the intrinsic thin layer structure (the HIT solar cell), a p-doped thin film silicon or its alloy (pDTF-Si/A) is used as the hole collecting window layer. However, the parasitic absorbance in the pDTF-Si/A window layer, and the toxic, explosive diborane gas used for p-doping are limiting factors for achieving HIT cells with reduced processing costs and / or higher efficiencies. In this work, pDTF-Si/A is replaced by V2Ox, which is deposited by a simple physical vapor deposition technique. Due to the wide band gap of V2Ox, the HIT solar cell with the V2Ox window layer generates a higher short-circuit current density than the reference conventional HIT cell under 1 sun, and achieves an open-circuit voltage of 0.7 V. Furthermore, the charge carrier lifetime and pseudo-efficiency values of the HIT solar cell with the V2Ox window layer indicate that this cell has the potential to outperform the conventional HIT cell in terms of the power conversation efficiency under the standard test conditions.

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Preparation of the Three Main Layers of CdS/CdTe Thin Film Solar Cells Using a Single Vacuum System

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.378-379.601 ◽

2011 ◽

Vol 378-379 ◽

pp. 601-605 ◽

Cited By ~ 1

Author(s):

Saleh N. Alamri ◽

M. S. Benghanem ◽

A. A. Joraid

Keyword(s):

Thin Film ◽

Solar Cells ◽

Solar Cell ◽

Short Circuit ◽

Short Circuit Current ◽

Short Circuit Current Density ◽

Open Circuit ◽

Fused Silica ◽

Vacuum System ◽

Cdte Thin Film

This study investigates the preparation of the three main layers of a CdS/CdTe thin film solar cell using a single vacuum system. A Close Space Sublimation System was constructed to deposit CdS, CdTe and CdCl2 solar cell layers. Two hot plates were used to heat the source and the substrate. Three fused silica melting dishes were used as containers for the sources. The properties of the deposited CdS and CdTe films were determined via Atomic force microscopy, scanning electron microscopy, X-ray diffraction and optical transmission spectroscopy. An J-V characterization of the fabricated CdS/CdTe solar cells was performed under solar radiation. The short-circuit current density, Jsc, the open-circuit voltage, Voc, fill factor, FF and conversion efficiency, η, were measured and yielded values of 27 mA/cm2, 0.619 V, 58% and 9.8%, respectively.

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Effect of the Phosphorus Gettering on Si Heterojunction Solar Cells

International Journal of Photoenergy ◽

10.1155/2012/794876 ◽

2012 ◽

Vol 2012 ◽

pp. 1-7 ◽

Cited By ~ 2

Author(s):

Hyomin Park ◽

Sung Ju Tark ◽

Chan Seok Kim ◽

Sungeun Park ◽

Young Do Kim ◽

...

Keyword(s):

Solar Cells ◽

Current Density ◽

Crystalline Silicon ◽

Short Circuit ◽

Short Circuit Current ◽

Short Circuit Current Density ◽

Open Circuit ◽

Solar Simulator ◽

Heterojunction Solar Cells ◽

Crystalline Silicon Solar Cells

To improve the efficiency of crystalline silicon solar cells, should be collected the excess carrier as much as possible. Therefore, minimizing the recombination both at the bulk and surface regions is important. Impurities make recombination sites and they are the major reason for recombination. Phosphorus (P) gettering was introduced to reduce metal impurities in the bulk region of Si wafers and then to improve the efficiency of Si heterojunction solar cells fabricated on the wafers. Resistivity of wafers was measured by a four-point probe method. Fill factor of solar cells was measured by a solar simulator. Saturation current and ideality factor were calculated from a dark current density-voltage graph. External quantum efficiency was analyzed to assess the effect of P gettering on the performance of solar cells. Minority bulk lifetime measured by microwave photoconductance decay increases from 368.3 to 660.8 μs. Open-circuit voltage and short-circuit current density increase from 577 to 598 mV and 27.8 to 29.8 mA/cm2, respectively. The efficiency of solar cells increases from 11.9 to 13.4%. P gettering will be feasible to improve the efficiency of Si heterojunction solar cells fabricated on P-doped Si wafers.

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