scholarly journals Performance Dependence of (I-V) and (C-V) for Solar Cells on Environmental Conditions

2018 ◽  
Vol 14 (1) ◽  
pp. 5331-5351
Author(s):  
A. M. Abd El-Maksood
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Dynamic Characteristics ◽  
Environmental Conditions ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Open Circuit ◽  
Charge Carrier Concentration ◽  
Crystalline Silicon Solar Cell ◽  
Cell Parameters

The present paper is a trial to shed further light on the dependence performance of mono-crystalline silicon solar cell (photovoltaic cell) on the environmental conditions. In this concern, the static (I-V) and dynamic (C-V) characteristics measurement were studied in details under the effect of illumination type, intensity and wavelength, as well temperature on the physical and electrical parameters of solar cell. The dependence of cell parameters- extracted from (I-V) characteristic curves- open-circuit voltage (Voc), short-circuit current (Isc), fill-factor (FF), conversion efficiency (η) as well the series -and shunt-resistances (Rs and Rsh), on the intensity has been investigated for a wide illumination intensity range 1.0 - 70 mW/cm2. It was observed that, for illumination levels higher than 10 klux, the values of Voc, Rsh, FF and efficiency were shown to be saturated. Isc was shown to be increased linearly, while Rs decreased exponentially as a function of illumination level. On the other hand, considering the dynamic characteristics (C-V), a detailed study was carried out for solar cells biased on both the forward - and reverse modes at frequency range of 20 kHz - 140 kHz and different illumination - levels. From which, the barrier potential (Vbi) and doping (charge carrier) concentration (Na) were determined. Besides, the influence of temperature within the range from 30 up to 110 oC on both the static and dynamic characteristics was tested. From which, it is clear that Voc, maximum powers (Pmax), FF, η of the sample were shown to be temperature decreasing functions. Moreover, Isc has a feeble increasing temperature coefficient. Finally, the solar cell capacitance (C) and dissipation factor (D) rise with rising temperature in both bias voltage conditions, while, impedance (Z), quality factor (Q), and phase angle (φ) reduce with rising temperature.

scholarly journals Improvement of short circuit current of mono crystalline silicon solar cells

2013 ◽  
Vol 16 (1) ◽  
pp. 48-56
Author(s):  
Vu Ngoc Hoang ◽  
Linh Ngoc Tran ◽  
Lan Truong ◽  
Khoa Thanh Nhat Phan ◽  
Chien Mau Dang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Indium Tin Oxide ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Front Surface ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Crystalline Silicon Solar Cell ◽  
Antireflection Coatings

In this report we present series of experiments during which the short circuit current of mono crystalline silicon solar cell was improved step by step so as a consequence the efficiency was increased. At first, the front contact of solar cell was optimized to reduce the shadow loss and the series resistance. Then surface treatments were prepared by TMAH solution to reduce the total light reflectance and to improve the light trapping effect. Finally, antireflection coatings were deposited to passivate the front surface either by silicon nitride thin layer or to increase the collection probability by indium tin oxide layer, and to reduce the reflectance of light. As a result, solar cells of about 13% have been obtained, with the average open circuit voltage Voc about 527mV, with the fill factor about 68% and the short circuit current about 7.92 mA/cm2 under the irradiation density of 21 mW/cm2.

Measured and Simulated Temperature Dependence of A-Si:H Solar Cell Parameters

1996 ◽  
Vol 426 ◽  
Author(s):  
H. Stiebig ◽  
Th. Eickhoff ◽  
J. Zimmer ◽  
C. Beneking ◽  
H. Wagner
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Temperature Dependence ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Cell Parameters ◽  
Crystalline Silicon Solar Cells ◽  
Device Modelling

AbstractIn contrast to the successful application of analytic equations to the current-voltage behaviour of crystalline silicon solar cells in the dark and under AM1.5 illumination, the description of a-Si:H solar cells parameters requires device modelling concepts taking the full set of semiconductor equations into account. This in particular holds for the explanation of the temperature dependence (225–400K) of experimentally determined a-Si:H p-i-n solar cell parameters. Device modelling calculations show that the observed decrease of the short circuit current at AM 1.5 with lower T is much more effected by the additional charge trapped in the tail states and recharging of defect states than by the broadening of the gap. The induced electric field distortion blocks the extraction of photo generated holes. The open circuit voltage Voc increases with lower T which is caused by the same trapping effect.

Measured and Simulated Temperature Dependence of A-Si:H Solar Cell Parameters

1996 ◽  
Vol 420 ◽  
Author(s):  
H. Stiebig ◽  
Th. Eickhoff ◽  
J. Zimmer ◽  
C. Beneking ◽  
H. Wagner
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Temperature Dependence ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Cell Parameters ◽  
Crystalline Silicon Solar Cells ◽  
Device Modelling

AbstractIn contrast to the successful application of analytic equations to the current-voltage behaviour of crystalline silicon solar cells in the dark and under AM 1.5 illumination, the description of a-Si:H solar cells parameters requires device modelling concepts taking the full set of semiconductor equations into account. This in particular holds for the explanation of the temperature dependence (225-400K) of experimentally determined a-Si:H p-i-n solar cell parameters. Device modelling calculations show that the observed decrease of the short circuit current at AM 1.5 with lower T is much more effected by the additional charge trapped in the tail states and recharging of defect states than by the broadening of the gap. The induced electric field distortion blocks the extraction of photo generated holes. The open circuit voltage Voc increases with lower T which is caused by the same trapping effect.

Study of Photoelectrochemical Solar Cell Using WSe2 Crystal

2013 ◽  
Vol 665 ◽  
pp. 330-335 ◽  
Author(s):  
Ripal Parmar ◽  
Dipak Sahay ◽  
R.J. Pathak ◽  
R.K. Shah
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Fill Factor ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Electrical Energy ◽  
Open Circuit ◽  
Cell Parameters ◽  
Photoelectrochemical Solar Cell ◽  
Photoelectrochemical Solar Cells

The solar cells have been used as most promising device to convert light energy into electrical energy. In this paper authors have attempted to fabricate Photoelectrochemical solar cell with semiconductor electrode using TMDCs. The Photoelectrochemical solar cells are the solar cells which convert the solar energy into electrical energy. The photoelectrochemical cells are clean and inexhaustible sources of energy. The photoelectrochemical solar cells are fabricated using WSe2crystal and electrolyte solution of 0.025M I2, 0.5M NaI, 0.5M Na2SO4. Here the WSe2crystals were grown by direct vapour transport technique. In our investigations the solar cell parameters like short circuit current (Isc) and Open circuit voltage (Voc) were measured and from that Fill factor (F.F.) and photoconversion efficiency (η) are investigated. The results obtained shows that the value of efficiency and fill factor of solar cell varies with the illumination intensities.

scholarly journals Analytical Study of the Electrical Output Characteristics of c-Si Solar Cells by Cut and Shading Phenomena

Energies ◽  
2018 ◽  
Vol 11 (12) ◽  
pp. 3397 ◽  
Author(s):  
Jong Lim ◽  
Woo Shin ◽  
Hyemi Hwang ◽  
Young-Chul Ju ◽  
Suk Ko ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Incident Light ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Si Solar Cell ◽  
Si Solar Cells ◽  
Electrical Output

Cut solar cells have received considerable attention recently as they can reduce electrical output degradation when the c-Si solar cells (crystalline-silicon solar cells) are shaded. Cut c-Si solar cells have a lower short-circuit current than normal solar cells and the decrease in short-circuit currents is similar to the shading effect of c-Si solar cells. However, the results of this study’s experiment show that the shadow effect of a c-Si solar cell reduces the V o c (open circuit voltage) in the c-Si solar cell but the V o c does not change when the c-Si solar cell is cut because the amount of incident light does not change. In this paper, the limitations of the electrical power analysis of the cut solar cells were identified when only photo current was considered and the analysis of the electric output of the cut c-Si solar cells was interpreted with a method different from that used in previous analyses. Electrical output was measured when the shaded and cut rates of c-Si solar cells were increased from 0% to 25, 50 and 75%, and a new theoretical model was compared with the experimental results using MATLAB.

scholarly journals An Analysis of Fill Factor Loss Depending on the Temperature for the Industrial Silicon Solar Cells

Energies ◽  
2020 ◽  
Vol 13 (11) ◽  
pp. 2931
Author(s):  
Kwan Hong Min ◽  
Taejun Kim ◽  
Min Gu Kang ◽  
Hee-eun Song ◽  
Yoonmook Kang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Temperature Dependence ◽  
Fill Factor ◽  
Crystalline Silicon ◽  
Crystalline Silicon Solar Cell ◽  
Initial State ◽  
Cell Parameters ◽  
Loss Analysis ◽  
Pv Module

Since the temperature of a photovoltaic (PV) module is not consistent as it was estimated at a standard test condition, the thermal stability of the solar cell parameters determines the temperature dependence of the PV module. Fill factor loss analysis of crystalline silicon solar cell is one of the most efficient methods to diagnose the dominant problem, accurately. In this study, the fill factor analysis method and the double-diode model of a solar cell was applied to analyze the effect of J01, J02, Rs, and Rsh on the fill factor in details. The temperature dependence of the parameters was compared through the passivated emitter rear cell (PERC) of the industrial scale solar cells. As a result of analysis, PERC cells showed different temperature dependence for the fill factor loss of the J01 and J02 as temperatures rose. In addition, we confirmed that fill factor loss from the J01 and J02 at elevated temperature depends on the initial state of the solar cells. The verification of the fill factor loss analysis was conducted by comparing to the fitting results of the injection dependent-carrier lifetime.

Numerical Modeling of CuInxGa(1-x)Se2/WS2 Thin Solar Cell with an Enhanced PCE

2021 ◽  
Vol 11 (2) ◽  
pp. 393-401
Author(s):  
Youcef Belhadji
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Buffer Layer ◽  
Short Circuit ◽  
Open Circuit ◽  
Limiting Factors ◽  
Light Spectrum ◽  
Large Area ◽  
Cell Parameters ◽  
The Impact

Designing thin film solar cells with high and stable output performance under different operating points remains a large area of research. In the context of Chalcopyrite-based solar cells (CuInxGa(1-x)Se2) where the buffer layer is CdS, great progress has been made but research is still underway to optimize their performance. Besides the environmental concerns and limiting factors of CdS material, the use or combination of new materials like ZnS, ZnSe and WS2 as a buffer layer is solicited. Due to these attracted optical and crystallographic properties, Tungsten Disulfide: WS2 is solicited during the last years. Through numerical simulation, we investigate in this work the dc parameters of CuInxGa(1-x)Se2/WS2 solar cell with reduced buffer layer thickness of 30 nm. Considering the presence of neutral and divalent defects in the absorber layer, simulations are performed under the impact of temperature, concentration of charge carriers in WS2 layer and light spectrum change. The divalent defects taken into account are: double donors / acceptors and amphoteric having a Gaussian distribution. For more calculation precision and in order to obtain the desired performance of the solar cell, the impact of series and shunt resistors is also considered. In comparison with results reported in previous works, carried out on the CuInxGa(1-x) Se2/WS2 solar cell, a remarkable improvement in the performance of the solar cell is achieved. When temperature increase by 10K, the short circuit current and  open circuit voltage are enhanced by ~0,05mA/cm2 and ~0,0022 respectively. The optimal values of the solar cell parameters obtained in this study are: Jsc≈ 31.0683 (mA/cm2), Voc=1.0173 (V), PCE = 26.72 % and FF=84.54%.

Efficiency enhancement of silicon solar cells using highly porous thermal cooling layer

2018 ◽  
Vol 29 (8) ◽  
pp. 1495-1511 ◽  
Author(s):  
Vivek Kumar ◽  
Amit Kumar ◽  
Hrishikesh Dhasmana ◽  
Abhishek Verma ◽  
PK Bhatnagar ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Heat Dissipation ◽  
Crystalline Silicon ◽  
Open Circuit ◽  
Crystalline Silicon Solar Cell ◽  
Effective Manner ◽  
Thermal Cooling ◽  
Highly Porous ◽  
Working Efficiency

In summer season, temperature of solar panels increases thereby decreases the working efficiencies of the solar cells by a larger factor, sometime even up to 3–4%. The present research paper reports a carbon-based porous thermal cooling layer, which acts as a heat dissipating agent beneath the poly-crystalline silicon solar cell. The thermal cooling layer has highly porous structure with average interpore and intrapore size to be 6 µm–0.6 µm and 11.5 Å, respectively, which enhances the surface area (798.35 m2/g) and generates numbers of air channels within the sheet for higher heat dissipation. Thermal cooling layer’s thickness-dependent studies confirm that an optimum thickness of 14 mm shows the highest cooling efficiency. The thermal cooling layer beneath the solar cell decreases the working temperature of the cell up to 18.5°C. The open-circuit voltage recorded for the solar cell (with optimized thickness of thermal cooling layer beneath the cell) increases to 0.56 V from 0.52 V (device without thermal cooling layer) at real time condition, which leads to increase the working efficiency of the cell by 9.6%. The theoretically calculated and experimentally measured efficiency of the solar cell at various temperatures are compared and shows good agreement between experimental data and theory. This investigation reveals that the used thermal cooling layer can significantly improve the device working efficiency in a simple and cost-effective manner.

Crystalline silicon solar cells with high resistivity emitter

2009 ◽  
Vol 17 (2) ◽  
Author(s):  
P. Panek ◽  
K. Drabczyk ◽  
P. Zięba
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Secondary Ion Mass Spectrometry ◽  
Crystalline Silicon ◽  
Quantitative Estimation ◽  
Spectral Response ◽  
World Market ◽  
High Resistivity ◽  
Crystalline Silicon Solar Cell ◽  
Cell Parameters

AbstractThe paper presents a part of research targeted at the modification of crystalline silicon solar cell production using screen-printing technology. The proposed process is based on diffusion from POCl3 resulting in emitter with a sheet resistance on the level of 70 Ω/□ and then, shaped by high temperature passivation treatment. The study was focused on a shallow emitter of high resistivity and on its influence on output electrical parameters of a solar cell. Secondary ion mass spectrometry (SIMS) has been employed for appropriate distinguishing the total donor doped profile. The solar cell parameters were characterized by current-voltage characteristics and spectral response (SR) methods. Some aspects playing a role in suitable manufacturing process were discussed. The situation in a photovoltaic industry with emphasis on silicon supply and current prices of solar cells, modules and photovoltaic (PV) systems are described. The economic and quantitative estimation of the PV world market is shortly discussed.

scholarly journals CdTe-Based Thin Film Solar Cells: Past, Present and Future

Energies ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1684
Author(s):  
Alessandro Romeo ◽  
Elisa Artegiani
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Early Years ◽  
Solar Cell Efficiency ◽  
Cell Efficiency

CdTe is a very robust and chemically stable material and for this reason its related solar cell thin film photovoltaic technology is now the only thin film technology in the first 10 top producers in the world. CdTe has an optimum band gap for the Schockley-Queisser limit and could deliver very high efficiencies as single junction device of more than 32%, with an open circuit voltage of 1 V and a short circuit current density exceeding 30 mA/cm2. CdTe solar cells were introduced at the beginning of the 70s and they have been studied and implemented particularly in the last 30 years. The strong improvement in efficiency in the last 5 years was obtained by a new redesign of the CdTe solar cell device reaching a single solar cell efficiency of 22.1% and a module efficiency of 19%. In this paper we describe the fabrication process following the history of the solar cell as it was developed in the early years up to the latest development and changes. Moreover the paper also presents future possible alternative absorbers and discusses the only apparently controversial environmental impacts of this fantastic technology.

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