Residual Gas Phase Contamination of Al-Cu Alloy Films and its Effect on Electromigration Behavior

1996 ◽  
Vol 428 ◽  
Author(s):  
Imran Hashim ◽  
Ivo J. Raaijmakers ◽  
Glen Adler ◽  
Ardy Sidhwa ◽  
Sudhir Chopra
Keyword(s):  
Gas Phase ◽  
Physical Vapor Deposition ◽  
Target Material ◽  
Vacuum System ◽  
Al Alloy ◽  
Alloy Films ◽  
Cu Alloy ◽  
Effect Of Impurities ◽  
Residual Gas ◽  
Vacuum Systems

AbstractThe major sources of impurities in sputtered Al alloy films for interconnects, prepared by physical vapor deposition include those originating from the target material, residual gases present in the vacuum system, and those introduced through the gas delivery system. In this study, we report the effect of impurities incorporated from residual gases present in vacuum systems on the electromigration performance of 0.6 μm wide Al-l%Cu lines. Controlled leaks of isotope gases H2O18, N215, O218, and C13H4, in 10−6 10−9 Torr range, were introduced into a PVD tool during the sputtering process. Using these isotope gases, the impurities originating from residual gases were distinguished from those originating from other sources of impurities. The sputtering target was found to be the major source of H and O impurities in the film, whereas N atoms are introduced in the film mainly through the gas phase. Furthermore, N atoms in the film were found to affect its electromigration behaviour to a larger extent than O and H.

Temperature Dependence of Internal Stress and Crystal Growth of Dilute Cu Alloy Films

2007 ◽  
Vol 127 ◽  
pp. 147-152 ◽  
Author(s):  
Yousuke Koike ◽  
Toshio Inase ◽  
Shinji Takayama
Keyword(s):  
Internal Stress ◽  
Grain Growth ◽  
Internal Stresses ◽  
Al Alloy ◽  
Alloy Films ◽  
Dilute Alloys ◽  
Cu Alloy ◽  
Hillock Formation ◽  
Pure Cu ◽  
Deposited Films

Annealing behavior of dilute Cu-X alloys (adding element X = transition metal and rare-earth metal with less than 3 at %) was investigated in terms of resistivity, internal stress, grain growth and hillock formation. The resistivity increases with addition of impurities regardless of kinds of adding elements. Generally, resistivity starts to decrease on annealing above 200 °C. Among present Cu dilute alloys, Sn addition shows the lowest resistivity 2.5 μΩcm on annealing at 400 °C. However, compared with a pure Cu film, salient grain growth of present dilute alloys does not takes place even at temperatures above 300 °C , where the grain size is nearly the same as that of as-deposited films. In-situ surface observation using an atomic force microscope (AFM ) revealed that hillocks did not grow on cooling stage (under tension), but started to form on heating stage (under compression). The scanning electron microscopy (SEM) observation of hillocks thus formed in present dilute alloy films shows that the external appearance of these defects was quite different from those observed in Al and Al alloy films. They most likely grow with a preferential crystal plane, not irregular growth like Al and Al alloy films. The internal stresses in most of the present as-deposited dilute Cu alloy films were nearly zero or compression of –25 to –100MPa, and upon annealing, they started to increase in tensile manner due to thermal stresses induced by the mismatch of the thermal expansion between substrates and deposited films. A large stress relaxation started to occur above 250°C, associating with a large number of hillock formation.

Residual Gas Reactions in the Electron Microscope: I. Qualitative Observations on the Water Gas Reaction

1968 ◽  
Vol 26 ◽  
pp. 292-293
Author(s):  
Richard E. Hartman ◽  
Roberta S. Hartman ◽  
Peter L. Ramos
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
Gas Phase ◽  
Absolute Temperature ◽  
Residual Gas ◽  
Gas Reactions ◽  
Image Position ◽  
The Right ◽  
Water Gas ◽  
Thinning Rate

The action of water and the electron beam on organic specimens in the electron microscope results in the removal of oxidizable material (primarily hydrogen and carbon) by reactions similar to the water gas reaction .which has the form:The energy required to force the reaction to the right is supplied by the interaction of the electron beam with the specimen.The mass of water striking the specimen is given by:where u = gH2O/cm2 sec, PH2O = partial pressure of water in Torr, & T = absolute temperature of the gas phase. If it is assumed that mass is removed from the specimen by a reaction approximated by (1) and that the specimen is uniformly thinned by the reaction, then the thinning rate in A/ min iswhere x = thickness of the specimen in A, t = time in minutes, & E = efficiency (the fraction of the water striking the specimen which reacts with it).

The formation of low temperature Cu3Si in Ag(Cu)/Si structure upon annealing and its effects on adhesion and resistivity

2003 ◽  
Vol 766 ◽  
Author(s):  
Sungjin Hong ◽  
Seob Lee ◽  
Yeonkyu Ko ◽  
Jaegab Lee
Keyword(s):  
Low Temperature ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Si Substrate ◽  
Copper Silicide ◽  
Alloy Films ◽  
Cu Alloy ◽  
Cu Film ◽  
Rapid Drop

AbstractThe annealing of Ag(40 at.% Cu) alloy films deposited on a Si substrate at 200 – 800 oC in vacuum has been conducted to investigate the formation of Cu3Si at the Ag-Si interface and its effects on adhesion and resistivity of Ag(Cu)/Si structure. Auger electron spectroscopy(AES) analysis showed that annealing at 200°C allowed a diffusion of Cu to the Si surface, leading to the significant reduction in Cu concentration in Ag(Cu) film and thus causing a rapid drop in resistivity. In addition, the segregated Cu to the Si surface reacts with Si, forming a continuous copper silicide at the Ag(Cu)/Si interface, which can contribute to an enhanced adhesion of Ag(Cu)/Si annealed at 200 oC. However, as the temperature increases above 300°C, the adhesion tends to decrease, which may be attributed to the agglomeration of copper silicide beginning at around 300°C.

Electromigration Drift Velocity in Al‐Alloy and Cu‐Alloy Lines

1996 ◽  
Vol 143 (3) ◽  
pp. 1001-1006 ◽  
Author(s):  
C.‐K. Hu ◽  
K. Y. Lee ◽  
K. L. Lee ◽  
C. Cabral ◽  
E. G. Colgan ◽  
...  
Keyword(s):  
Drift Velocity ◽  
Al Alloy ◽  
Cu Alloy

Ni-V(or Cr) Co-addition Cu alloy films with high stability and low resistivity

2018 ◽  
Vol 205 ◽  
pp. 253-260 ◽  
Author(s):  
Y.H. Zheng ◽  
X.N. Li ◽  
X.T. Cheng ◽  
W. Sun ◽  
M. Liu ◽  
...  
Keyword(s):  
High Stability ◽  
Alloy Films ◽  
Low Resistivity ◽  
Cu Alloy ◽  
Co Addition

Morphology and crystallography of single crystal precipitates on Al alloy films grown by the sputtering method

1993 ◽  
Vol 73 (12) ◽  
pp. 8575-8579 ◽  
Author(s):  
Hideo Niwa ◽  
Ichiro Yamaguchi ◽  
Haruyoshi Yagi ◽  
Masaharu Kato
Keyword(s):  
Single Crystal ◽  
Al Alloy ◽  
Alloy Films

Residual gas analysers and their use in high vacuum systems

Vacuum ◽  
1987 ◽  
Vol 37 (3-4) ◽  
pp. 335-338 ◽  
Author(s):  
F.M. Mao ◽  
J.M. Yang ◽  
W.E. Austin ◽  
J.H. Heck
Keyword(s):  
High Vacuum ◽  
Residual Gas ◽  
Vacuum Systems

Comparison of Sputtered Titanium Nitride on Silicon Dioxide and Aluminum-Alloy Thin Films

1997 ◽  
Vol 3 (S2) ◽  
pp. 469-470
Author(s):  
J.L. Drown ◽  
S.M. Merchant ◽  
M.E. Gross ◽  
D. Eaglesham ◽  
L.A. Giannuzzi ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Titanium Nitride ◽  
Physical Vapor Deposition ◽  
Semiconductor Industry ◽  
Microstructural Characterization ◽  
Growth Conditions ◽  
Alloy Film ◽  
Al Alloy ◽  
Orientation Relationships ◽  
Materials Used

Titanium nitride (TiN) films are used as anti-reflection coatings (ARC) on aluminum (Al) films to facilitate lithography processes during multilevel metallization for the manufacture of integrated circuits on silicon-based (Si) semiconductor devices. It is generally accepted in the literature that the microstructure of multilevel metal stacks is influenced by the texture of the substrate. For the case of interconnect materials used in the semiconductor industry, a typical metal stack is as follows: Titanium/Titanium Nitride/Al-alloy/ARC-Titanium Nitride. The Ti/TiN layer underneath the Al-alloy film is used as a barrier stack to prevent junction spiking. The Ti/TiN underlayer also determines the growth conditions (crystallography and orientation relationships) of the subsequent Al-alloy film.This study focuses on the microstructural characterization of the ARC-TiN layer on Si-oxide and Ti/TiN/Al-alloy substrates that are fabricated under similar conditions using conventional physical vapor deposition (PVD - sputtering) techniques. The ARC-TiN microstructure was investigated by transmission electron microscopy (TEM) using a Philips EM430 operating at 300 kV.

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