Impact of velocity saturation and hot carrier effects on channel thermal noise model of deep sub-micron MOSFETs

2012 ◽  
Vol 72 ◽  
pp. 8-11 ◽  
Author(s):  
S.N. Ong ◽  
K.S. Yeo ◽  
K.W.J. Chew ◽  
L.H.K. Chan ◽  
X.S. Loo ◽  
...  
1996 ◽  
Vol 428 ◽  
Author(s):  
Abhijit Phanse ◽  
Samar Saha

AbstractThis paper addresses hot-carrier related reliability issues in deep submicron silicon nMOSFET devices. In order to monitor the hot-carrier induced device degradation, the substrate current was measured for devices with varying channel lengths (20 um - 0.24 um) under various biasing conditions. Deep submicron devices experience velocity saturation of channel carriers due to extremely high lateral electric fields. To evaluate the effects of velocity saturation in the channel, the pinch-off length in the channel was extracted for all the devices of the target technology. It was observed that for very short channel devices, carriers in most of the channel experience velocity saturation and almost the entire channel gets pinched off. It is shown in this paper that for very short channel devices, the pinch-off length in the channel is limited by the effective channel length, and that velocity saturation effects are critical to the transport of channel carriers.


1997 ◽  
Vol 70 (7) ◽  
pp. 853-855 ◽  
Author(s):  
M. Elsässer ◽  
S. G. Hense ◽  
M. Wegener

2017 ◽  
Author(s):  
Dac-Trung Nguyen ◽  
Laurent Lombez ◽  
Francois Gibelli ◽  
Myriam Paire ◽  
Soline Boyer-Richard ◽  
...  

Author(s):  
Zhexuan Ren ◽  
Xia An ◽  
Jianing Wang ◽  
Xing Zhang ◽  
Ru Huang

1996 ◽  
Vol 06 (C3) ◽  
pp. C3-49-C3-54 ◽  
Author(s):  
S.-H. Renn ◽  
C. Raynaud ◽  
F. Balestra

Author(s):  
Asmaa Nur Aqilah Zainal Badri ◽  
Norlaili Mohd Noh ◽  
Shukri Bin Korakkottil Kunhi Mohd ◽  
Asrulnizam Abd Manaf ◽  
Arjuna Marzuki ◽  
...  

Accurate transistor thermal noise model is crucial in IC design as it allows accurate selection of transistors for specific frequency application. The accuracy of the model is represented by the similarity between the simulated and the measured noise parameters (NPs). This work was based on a problem faced by a foundry concerning the dissimilarities between the measured and simulated NPs, especially minimum noise figure (NF<sub>min</sub>) for frequencies below 3 GHz.


Author(s):  
Min-Ru Peng ◽  
Mu-Chun Wang ◽  
Liang-Ru Ji ◽  
Heng-Sheng Huang ◽  
Shuang-Yuan Chen ◽  
...  

Author(s):  
Binhong Li ◽  
Jiantou Gao ◽  
Kai Zhao ◽  
Xing Zhao ◽  
Fang Yu ◽  
...  

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