The Properties of Ferroelectric Domain of PLT Thin Films Prepared by RF Magnetron Sputtering

2005 ◽  
Vol 902 ◽  
Author(s):  
Hong Liu ◽  
Zhaohui Pu ◽  
Zhihong Wang ◽  
Huidong Huang ◽  
Yanrong Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Domain Structure ◽  
Rf Sputtering ◽  
Piezoresponse Force Microscopy ◽  
Rf Magnetron Sputtering ◽  
Pyroelectric Coefficient ◽  
Pure Perovskite Structure ◽  
Force Microscopy ◽  
Xrd Patterns

AbstractLanthanum-modified lead titanate (PLT) ferroelectric thin films were fabricated by the RF magnetron sputtering system on Pt/Ti/SiO2/Si(100) substrates. The x-ray diffraction (XRD) patterns of the PLT films showed that the pure perovskite structure was formed in the PLT thin films. The Piezoresponse Force Microscopy (PFM) was used for determining the domain structure of these films. It was found that the 90 degree domain was the main domain structure of PLT thin films. It was found that the PLT films prepared by RF sputtering have relatively large pyroelectric coefficient γ=2.20×10-8C·(cm2·K)-1 and relatively high figures of merit for current responsivity, voltage responsivity and specific detectivity.

Structural, Optical and Magnetic Properties of Co and Fe Doped ZnO Thin Films Grown by Radio Frequency Magnetron Sputtering

2006 ◽  
Vol 957 ◽  
Author(s):  
Luis Manuel Angelats ◽  
Maharaj S Tomar ◽  
Rahul Singhal ◽  
Oscar P Perez ◽  
Hector J Jimenez ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Visible Range ◽  
Radio Frequency Magnetron Sputtering ◽  
Optical And Magnetic Properties ◽  
Doped Zno ◽  
Xrd Patterns ◽  
Antiferromagnetic Behavior

ABSTRACTZn0.90Co0.10O and Zn0.85[Co0.50Fe0.50]0.15O targets were used to grow thin films by rf magnetron sputtering. XRD patterns of the films showed a strong preferred orientation along c-axis. Zn0.90Co0.10O film showed a transmittance above 75% in the visible range, while the transmittance of the Zn0.85[Co0.50Fe0.50]0.15O film was about 45%; with three absorption peaks attributed to d-d transitions of tetrahedrally coordinated Co2+. The band gap values for Zn0.90Co0.10O and Zn0.85[Co0.50Fe0.50]0.15O films were 2.95 and 2.70 eV respectively, which are slightly less than ZnO bulk. The Zn0.90Co0.10O film showed a relatively large positive magnetoresistance (MR) at the high magnetic field in the temperature range from 7 to 50 K, which reached 11.9% a 7K for the magnetoresistance. The lowest MR was found at 100 K. From M-H curve measured at room temperature shown a probable antiferromagnetic behavior, although was possible to observe little coercive field of 30 Oe and 40 Oe for Zn0.90Co0.10O and Zn0.85[Co0.50Fe0.50]0.15O films, respectively.

Synthesis and Characterization of Nb-Doped TiO2 Thin Films Prepared by RF Magnetron Sputtering

2015 ◽  
Vol 1117 ◽  
pp. 139-142 ◽  
Author(s):  
Marius Dobromir ◽  
Radu Paul Apetrei ◽  
A.V. Rogachev ◽  
Dmitry L. Kovalenko ◽  
Dumitru Luca
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Rf Magnetron Sputtering ◽  
X Ray ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Diffraction Patterns

Amorphous Nb-doped TiO2 thin films were deposited on (100) Si and glass substrates at room temperature by RF magnetron sputtering and a mosaic-type Nb2O5-TiO2 sputtering target. To adjust the amount of the niobium dopant in the film samples, appropriate numbers of Nb2O5 pellets were placed on the circular area of the magnetron target with intensive sputtering. By adjusting the discharge conditions and the number of niobium oxide pellets, films with dopant content varying between 0 and 16.2 at.% were prepared, as demonstrated by X-ray photoelectron spectroscopy data. The X-ray diffraction patterns of the as-deposited samples showed the lack of crystalline ordering in the samples. Surfaces roughness and energy band gap values increase with dopant concentration, as showed by atomic force microscopy and UV-Vis spectroscopy measurements.

Investigation of Nanostructure and Optical Properties of Flexible AZO Thin Films at Different Powers of RF Magnetron Sputtering

NANO ◽  
2018 ◽  
Vol 13 (06) ◽  
pp. 1850062 ◽  
Author(s):  
Sh. Khatami ◽  
L. Fekri Aval ◽  
G. Behzadi Pour
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Light Emitting ◽  
Structure Morphology ◽  
Xrd Patterns ◽  
Predominant Direction

In this study Al-doped Zinc Oxide (AZO) thin films were successfully deposited on the flexible Polymethyl methacrylate (PMMA) substrate by RF magnetron sputtering. The effects of RF power on the crystal structure, morphology, thickness and optical properties of AZO thin films have been investigated. The AZO thin films were analyzed using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), DEKTAK 3 profilometer, UV–Visible spectroscopy and room temperature photoluminescence (PL) spectroscopy. The XRD patterns show that increase of RF power leads to increase in the predominant direction along (100) and crystal plane of hexagonal ZnO. Moreover, the transmittance of thin films decreased from 76% to 61% and optical bang gap varied among 3.34[Formula: see text]eV to 3.22[Formula: see text]eV with increasing RF power. The PL spectra show excellent light-emitting characteristics: 375[Formula: see text]nm, 428[Formula: see text]nm, 467[Formula: see text]nm and 505[Formula: see text]nm. The results indicate that the peak intensity increases with increasing RF power from 80[Formula: see text]W to 180[Formula: see text]W.

Reactive RF magnetron sputtering epitaxy of NiO thin films on (0001) sapphire and (100) MgO substrates

2021 ◽  
Author(s):  
Keisuke Nishimoto ◽  
Kohei Shima ◽  
Shigefusa F. Chichibu ◽  
Mutsumi Sugiyama
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Domain Structure ◽  
Sapphire Substrate ◽  
Rf Magnetron Sputtering ◽  
Optical Devices ◽  
Single Domain ◽  
Grain Structures ◽  
Reactive Rf Magnetron Sputtering ◽  
Mgo Substrate

Abstract Epitaxial growths of NiO thin films were realized on (0001) sapphire and (100) MgO substrates by using a reactive RF magnetron sputtering method. The NiO epilayers grown on a (0001) sapphire exhibited the (111)-oriented double-domain structure, which comprised of a triangular and its inverted triangular grains. Meanwhile, the NiO epilayers on a (100) MgO exhibited the (100)-oriented single-domain structure, which comprised of quadrangular grains. The observed grain structures most likely reflect the growth planes of respective NiO epilayers, and, mixed crystals of NiO and MgO were present near the interface. Therefore, A (100) MgO substrate is suitable for obtaining a single-domain NiO epilayer, whereas a (0001) sapphire substrate is suitable for obtaining a NiO epilayer without interdiffusion between NiO and sapphire. These NiO epilayers will be expected for applying the physical properties evaluation using photoluminescence or Hall measurements, and the fabrication of electrical or optical devices.

Preparation and Pyroelectric Properties of La-Modified PbTiO8 Thin Films by Rf-Magnetron Sputtering

1996 ◽  
Vol 433 ◽  
Author(s):  
T. Kamada ◽  
R. Takayama ◽  
A. Tomozawa ◽  
S. Fujii ◽  
K. IIJIMA ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Linear Array ◽  
Rf Magnetron Sputtering ◽  
Fast Response ◽  
Pyroelectric Coefficient ◽  
Single Element ◽  
Air Conditioner ◽  
Pyroelectric Properties ◽  
Ir Sensors

AbstractHigh-quality La-modified PbTiO3 (Pb1−xLaxTi1−x/4O3; PLT) thin films were prepared by an rf-magnetron sputtering method. In this method, intermittent deposition was realized by periodical repetition of deposition and nondeposition processes. This deposition was found to enhance the horizontal grain growth of the films. The PLT thin films exhibit the phenomena named “self-polarization” and have high pyroelectric properties (pyroelectric coefficient γ of 5.0×10−8C/cm2K and low dielectric constant εr of 185) without a poling treatment. It was interestingly found that this self-polarization of the PLT thin films depends on the substrate temperature (Ts) and is based on a fairly small difference of the film composition (Pb/Ti). The pyroelectric properties were improved by means of addition of Mg to the PLT thin films. These thin films are expected to offer suitable materials for pyroelectric infrared (IR) sensors. High sensitive pyroelectric IR sensors (single element type and linear array type) were fabricated by using the PLT (x=0. 1) thin films with the new structures and the device processes. The sensors have remarkably high specific detectivity D* of 3.5×108 cm. Hz1/2/W and very fast response. A new compact IR sensing system using the linear array sensor (8 elements) has been developed for a new type of room air-conditioner.

Determination of domain structure and abundance of epitaxial Pb(Zr, Ti)O3 thin films grown on MgO(001) by rf magnetron sputtering

1999 ◽  
Vol 14 (1) ◽  
pp. 132-141 ◽  
Author(s):  
Kyeong Seok Lee ◽  
Young Min Kang ◽  
Sunggi Baik
Keyword(s):  
Thin Films ◽  
Curie Temperature ◽  
Magnetron Sputtering ◽  
Domain Structure ◽  
Rf Magnetron Sputtering ◽  
Curve Analysis ◽  
Crystalline Quality ◽  
Rocking Curve ◽  
X Ray

Epitaxial Pb(ZrxTi1−x)O3 (x = 0.0−0.32) ferroelectric thin films of 500 nm thickness were grown on MgO(001) single crystal substrates by in situ rf magnetron sputtering, and evolution of their domain structures is characterized by employing various x-ray diffraction techniques. X-ray θ-2θ scan showed the films were grown highly c-axis oriented with a tetragonal perovskite structure. 90° domain configuration was investigated using the x-ray rocking curve analysis for PZT 100 peaks in two different Φphi; angles. The rocking curve analysis showed that the degree of c-axis orientation and the crystalline quality of the films were improved continuously with increasing Zr concentration. The c-domain abundance as a function of Zr concentration was quantified using the x-ray rocking curves of PZT 001 and 100, taking account of structural factors and Lorentz-polarization factors. High temperature x-ray technique was also employed to quantify the domain structure as a function of temperature during cooling after reheating the samples to 650 °C. During the cooling process, c-domain abundance was found to increase continuously while the crystalline quality of the films was deteriorated below the Curie temperature. The results led us to conclude that the transformation strain of the film at and below the Curie temperature plays a significant role in the final domain structure and abundance of epitaxial PZT thin films.

scholarly journals Physical Properties of ZnO Thin Films Codoped with Titanium and Hydrogen Prepared by RF Magnetron Sputtering with Different Substrate Temperatures

2015 ◽  
Vol 2015 ◽  
pp. 1-11 ◽  
Author(s):  
Fang-Hsing Wang ◽  
Jen-Chi Chao ◽  
Han-Wen Liu ◽  
Tsung-Kuei Kang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Film Surface ◽  
Hexagonal Wurtzite Structure ◽  
Rf Magnetron Sputtering ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Transparent Conducting ◽  
Diffraction Patterns ◽  
Substrate Temperatures

Transparent conducting titanium-doped zinc oxide (TZO) thin films were prepared on glass substrates by RF magnetron sputtering using 1.5 wt% TiO2-doped ZnO as the target. Electrical, structural, and optical properties of films were investigated as a function of H2/(Ar + H2) flow ratios (RH) and substrate temperatures (TS). The optimalRHvalue for achieving high conducting TZO:H thin film decreased from 10% to 1% whenTSincreased from RT to 300°C. The lowest resistivity of9.2×10-4 Ω-cm was obtained asTS=100°C andRH=7.5%. X-ray diffraction patterns showed that all of TZO:H films had a hexagonal wurtzite structure with a preferred orientation in the (002) direction. Atomic force microscopy analysis revealed that the film surface roughness increased with increasingRH. The average visible transmittance decreased with increasingRHfor the RT-deposited film, while it had not considerably changed with differentRHfor the 300°C-deposited films. The optical bandgap increased asRHincreased, which is consistent with the Burstein-Moss effect. The figure of merits indicated thatTS=100°C andRH=7.5% were optimal conditions for TZO thin films as transparent conducting electrode applications.

PIEZORESPONSE FORCE MICROSCOPY STUDIES ON (100), (110) AND (111) EPITAXIALLY GROWTH BiFeO3 THIN FILMS

2012 ◽  
Vol 1477 ◽  
Author(s):  
R. P. Fernandes ◽  
L. Batista ◽  
A. C. G. Castro ◽  
L. Salamanca-Riba ◽  
M. P. Cruz ◽  
...  
Keyword(s):  
Thin Films ◽  
Domain Structure ◽  
Bismuth Ferrite ◽  
Random Access ◽  
Low Frequency ◽  
Piezoresponse Force Microscopy ◽  
Acoustic Microscopy ◽  
Force Microscopy ◽  
Piezo Force Microscopy ◽  
Ferroelectric Hysteresis

ABSTRACTBismuth ferrite (BiFeO3) is a magnetoelectric, multiferroic material with coexisting ferroelectric and magnetic orderings. It is considered as a candidate for the next generation of ferroelectric random-access memory devices because BiFeO3, in contrast to industrial ferroelectrics used today, does not contain the toxic element lead. Furthermore, its polarization values are higher than those of lead-based ferroelectrics. The magnitude of the polarization of a BiFeO3 film is dependent on its orientation and is related to the domain structure. This contribution presents and discusses the preparation of epitaxial BiFeO3 (BFO) thin films grown on SrRuO3/SrTiO3 substrates by pulsed laser deposition (PLD) and their characterization, especially by piezo force microscopy (PFM) and atomic force acoustic microscopy (AFAM). The thickness of an individual BFO film varies between 100 and 200 nm. The epitaxial nature of films in the crystallographic (100), (110), and (111) directions was confirmed by x-ray diffraction (XRD). Thin SrRuO3 layers, also prepared by PLD, were used as bottom electrode for the ferroelectric hysteresis measurements. Low frequency PFM measurements showed a monodomain structure for the as-grown (110) and (111) oriented samples. In BFO (100) films, different polarization variants were observed by ultrasonic piezo force microscopy (UPFM). The domain structure is reproduced from minimization of the electrostatic and elastic energies. Switching experiments using standard PFM as well as UPFM were carried out on the three samples with the objective of testing the coercive field and domain stability. The AFAM technique was used to map the elastic properties of the BFO thin-films at the micro- and nanoscale.

scholarly journals Effect of Selective Lateral Chromium Doping by RF Magnetron Sputtering on the Structural, and Opto-Electrical Properties of Nickel Oxide

2021 ◽  
Vol 11 (23) ◽  
pp. 11546
Author(s):  
Mohammad Shah Jamal ◽  
Khan Sobayel ◽  
Halina Misran ◽  
Taskina Nasrin ◽  
Khaled Althubeiti ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Nickel Oxide ◽  
Rf Magnetron Sputtering ◽  
Effect Study ◽  
Diffraction Peak ◽  
Cubic Phase ◽  
As Doping ◽  
Xrd Patterns

In this study, chromium (Cr)-doped nickel oxide (NiO) thin films were deposited by employing selective lateral doping of Cr in NiO by radio-frequency magnetron sputtering at different doping times ranging from 0 s (undoped) to 80 s. The structural, optical, and electrical properties of the resulting Cr-doped NiO thin films were investigated. Structural investigation from XRD patterns indicated that the grown Cr-doped NiO layer crystallized in a cubic phase. Broadening of the diffraction peak with increasing doping time from 0 s to 80 s led to a reduction in the crystallite size that varied from 23.52 nm to 14.65 nm. Compared with the undoped NiO, the diffraction peak along the (200) plane shifted from left to right as a function of doping time. This result indicated that Cr+3 could easily enter the NiO lattice. Results from the Hall-effect study disclosed that electrical properties of Cr-doped NiO was highly dependent on doping time. The conductivity of NiO was increased with doping time, and the highest conductivity (8.73 × 10−2 Scm−1) was achieved at a doping time of 80 s. Finally, optical investigations revealed that as doping time increased, the optical bandgap of Cr-doped NiO films dropped from 3.43 eV to 3.28 eV. The highest Urbach energy at higher doping time indicated that crystallinity became poorer, and the degree of defects increased with increasing doping time.

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