Hall Effect Measurements On SixGe1−x Bulk Alloys

1996 ◽  
Vol 442 ◽  
Author(s):  
T. Mchedlidze ◽  
I. Yonenaga
Keyword(s):  
Hall Effect ◽  
Carrier Transport ◽  
Czochralski Method ◽  
Charge Carriers ◽  
Transport Measurement ◽  
Type Conductivity ◽  
Measurement Results ◽  
Hall Effect Measurements ◽  
Bulk Alloys ◽  
Additional Charge

AbstractCarrier transport measurement results for SixGe1−x bulk alloys with 0.03≤x≤0.9, grown by the Czochralski method are presented. Both monocrystalline (x=0.03 and x=0.23) and polycrystalline (x=0.12, 0.25, 0.4, 0.5, 0.75, 0.9) samples were analyzed. In all samples additional charge carriers were created during growth or/and cooling of crystals. With n-type starting materials only alloy with x=0.9 revealed n-type conductivity, all other alloys were of ptype. Creation of acceptors in the SixGe1−x alloy grown by Czochralski method is maximal for 0.4≤x≤0.75.

Dynamics of Charge Carriers in Silicon Nanowire Photoconductors Revealed by Photo Hall Effect Measurements

ACS Nano ◽  
2018 ◽  
Vol 12 (4) ◽  
pp. 3436-3441 ◽  
Author(s):  
Kaixiang Chen ◽  
Xiaolong Zhao ◽  
Abdelmadjid Mesli ◽  
Yongning He ◽  
Yaping Dan
Keyword(s):  
Hall Effect ◽  
Silicon Nanowire ◽  
Charge Carriers ◽  
Hall Effect Measurements

MAGNETORESISTANCE AND FIELD DEPENDENCE OF THE HALL EFFECT IN INDIUM ANTIMONIDE

1958 ◽  
Vol 36 (5) ◽  
pp. 527-538 ◽  
Author(s):  
Gaston Fischer ◽  
D. K. C. MacDonald
Keyword(s):  
Magnetic Field ◽  
Magnetic Fields ◽  
Hall Effect ◽  
Field Dependence ◽  
Indium Antimonide ◽  
Charge Carriers ◽  
Band Theory ◽  
Hall Effect Measurements ◽  
A Charge ◽  
The Magnetic Field

Magnetoresistance and Hall-effect measurements in InSb are described. This semiconductor has charge carriers with sufficiently long mean free paths, l, that it is possible, even at room temperature and with available magnetic fields, to obtain l/r values considerably greater than unity, r being the orbital radius of a charge carrier moving in the applied magnetic field. The classical two-band theory has been found to account rather well for the results up to the highest magnetic fields employed. A review of the underlying assumptions of this theory is presented, and simple formulae are derived which allow the concentrations and mobilities of both types of carriers to be calculated from the magnetic field dependence of the resistivity, ρH, and of the Hall-constant, AH. The parameter Λ ≡ [(AH−A0)/A0]/[(ρH−ρ0)/ρ0] provides a useful means to check the consistency of the theory and can give some indication of the variation of the mobilities with the magnetic field.

Variations in the photoconductivity and in the electrical counting properties of diamonds

1956 ◽  
Vol 234 (1198) ◽  
pp. 419-432 ◽  
Keyword(s):  
Electrical Conductivity ◽  
Electric Field ◽  
Hall Effect ◽  
Temperature Effects ◽  
Room Temperature ◽  
Red Light ◽  
Quantitative Relationship ◽  
Charge Carriers ◽  
Light Irradiation ◽  
Hall Effect Measurements

The electrical conductivity produced by β -ray bombardment and by light irradiation in several diamonds was investigated in the temperature range 150 to 500° K. Considerable uniformity was observed in the behaviour of the specimens; all of them polarized strongly in the dark at room temperature, and polarization could be effectively eliminated by pulsing the electric field while maintaining the β -flux. Both the counting response and the photoconductivity increased as the temperature was lowered. This was interpreted as being largely due to an increase in the mobility of the charge carriers at lower temperatures, the quantitative relationship being consistent with Hall effect measurements. Accumulation of polarization was reduced by irradiation with red light or by elevation of temperature; at 420° K little sign of polarization remained. From various temperature effects, the thermal depths of the trapping levels in these diamonds were estimated at 0⋅6, 0⋅8 and 1 eV.

Thermally activated double-carrier transport in epitaxial graphene on vanadium-compensated 6H-SiC as revealed by Hall effect measurements

Carbon ◽  
2018 ◽  
Vol 139 ◽  
pp. 776-781 ◽  
Author(s):  
Tymoteusz Ciuk ◽  
Andrzej Kozlowski ◽  
Pawel Piotr Michalowski ◽  
Wawrzyniec Kaszub ◽  
Michal Kozubal ◽  
...  
Keyword(s):  
Hall Effect ◽  
Carrier Transport ◽  
Epitaxial Graphene ◽  
Thermally Activated ◽  
Hall Effect Measurements

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

Oxygen diffusion process in a Ba0.96La0.04SnO3thin film on SrTiO3(001) substrate as investigated by time-dependent Hall effect measurements

2015 ◽  
Vol 212 (7) ◽  
pp. 1487-1493 ◽  
Author(s):  
Woong-Jhae Lee ◽  
Hyung Joon Kim ◽  
Egon Sohn ◽  
Hoon Min Kim ◽  
Tai Hoon Kim ◽  
...  
Keyword(s):  
Diffusion Process ◽  
Hall Effect ◽  
Oxygen Diffusion ◽  
Time Dependent ◽  
Hall Effect Measurements
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