Relationship between Structural and Electrical Properties of Zn-Based Contacts to p-GaAs : Towards the Mechanism of the Ohmic Contact Formation

1996 ◽  
Vol 448 ◽  
Author(s):  
E. Kamińska ◽  
A. Piotrowska ◽  
S. Kasjaniuk ◽  
S. Gierlotka
Keyword(s):  
Electrical Properties ◽  
Native Oxide ◽  
Native Oxide Layer ◽  
Semiconductor Interface ◽  
Thermally Activated ◽  
Structural And Electrical Properties ◽  
Zn Content ◽  
P Type ◽  
Ohmic Contact Formation ◽  
The Relationship

AbstractThe relationship between electrical properties and microstructure of pure Zn and Au(Zn) contacts to p-GaAs has been studied. Thermally activated changes in ФB correlate with structural processes at MS interfaces. For Zn/GaAs contacts, lowering of ФB from 0.63 eV to 0.35 eV corresponds to the penetration of Zn into the native oxide layer. In AuZn/p-GaAs contacts, β-AuZn phase is responsible for the formation of ФB=0.4 eV in as-deposited contacts. The onset of the ohmic behaviour of Au(Zn)/p-GaAs contacts (ФB=0.3 eV) coincides with the appearance of α3-AuZn phase for Zn content less than 20 at.% or α1-AuZn, for higher Zn concentrations.The obtained results prove that the mechanism responsible for the formation of low-resistance Zn -based contacts to p-type GaAs is associated with the lowering of the Schottky barrier at the metal/semiconductor interface. We suggest that the ultimate properties of these contacts are determined by the presence of a single, specific phase in a direct contact with the semiconductor.

Enhanced structural and electrical properties of nonpolar a-plane p-type AlGaN/GaN superlattices

2019 ◽  
Vol 125 ◽  
pp. 310-314
Author(s):  
Zili Wu ◽  
Xiong Zhang ◽  
Jianguo Zhao ◽  
Aijie Fan ◽  
Hu Chen ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Structural And Electrical Properties ◽  
P Type

Structural and Electrical Properties of P—Type ZnO Thin Films

2008 ◽  
Author(s):  
H. Abdul Hamid ◽  
M. J. Abdullah ◽  
A. Abdul Aziz ◽  
H. B. Senin ◽  
G. Carini ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Zno Thin Films ◽  
Structural And Electrical Properties ◽  
P Type

A Semiconductor Nano-Patterning Approach Using AFM-Scratching Through Oxide Thin Layers

2002 ◽  
Vol 740 ◽  
Author(s):  
L. Santinacci ◽  
T. Djenizian ◽  
P. Schmuki
Keyword(s):  
Oxide Layer ◽  
Electrochemical Deposition ◽  
Thin Layers ◽  
Native Oxide ◽  
Silicon Substrates ◽  
Native Oxide Layer ◽  
Thermal Oxide ◽  
P Type ◽  
Insulating Properties ◽  
Nano Patterning

ABSTRACTAFM-scratching was performed through thin oxide layer which was either a native oxide layer (1.5 – 2 nm thick) or a thermal oxide layer (10 nm thick). Due to their insulating properties, the SiO2 films act as masks for the metal electrochemical deposition. In the scratched openings copper deposition can take place selectively and thus nano-scale metal lines could be successfully plated onto the p-type silicon substrates. Using particularly, if sufficiently thick thermal oxide has advantages over the native oxide, it allows a H-termination of the Si within the grooves (HF treatment) without eliminating the oxide layer on the rest of the surface.

scholarly journals G-Doping-Based Metal-Semiconductor Junction

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 945
Author(s):  
Avtandil Tavkhelidze ◽  
Larissa Jangidze ◽  
Zaza Taliashvili ◽  
Nima E. Gorji
Keyword(s):  
Formation Mechanism ◽  
Reverse Current ◽  
Probe Method ◽  
Silicon Substrates ◽  
Semiconductor Interface ◽  
Depletion Width ◽  
Current Reduction ◽  
Reduced Density ◽  
P Type ◽  
The Relationship

Geometry-induced doping (G-doping) has been realized in semiconductors nanograting layers. G-doping-based p-p(v) junction has been fabricated and demonstrated with extremely low forward voltage and reduced reverse current. The formation mechanism of p-p(v) junction has been proposed. To obtain G-doping, the surfaces of p-type and p+-type silicon substrates were patterned with nanograting indents of depth d = 30 nm. The Ti/Ag contacts were deposited on top of G-doped layers to form metal-semiconductor junctions. The two-probe method has been used to record the I–V characteristics and the four-probe method has been deployed to exclude the contribution of metal-semiconductor interface. The collected data show a considerably lower reverse current in p-type substrates with nanograting pattern. In the case of p+-type substrate, nanograting reduced the reverse current dramatically (by 1–2 orders of magnitude). However, the forward currents are not affected in both substrates. We explained these unusual I–V characteristics with G-doping theory and p-p(v) junction formation mechanism. The decrease of reverse current is explained by the drop of carrier generation rate which resulted from reduced density of quantum states within the G-doped region. Analysis of energy-band diagrams suggested that the magnitude of reverse current reduction depends on the relationship between G-doping depth and depletion width.

Study of Structural and Electrical Properties of Phosphorus-Doped p-Type ZnO Thin Films

2010 ◽  
Vol 49 (4) ◽  
pp. 041103 ◽  
Author(s):  
Yipeng Wang ◽  
Jianqing Zhou ◽  
Qian Lu ◽  
Lilong Liu ◽  
Xin Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Zno Thin Films ◽  
Structural And Electrical Properties ◽  
P Type ◽  
Phosphorus Doped
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