Structural and Optical Characterization of High-Quality Cubic GaN Epilayers Grown on GaAs and 3C-SiC Substrates by Gas-Source MBE Using RHEED In Situ Monitoring

1996 ◽  
Vol 449 ◽  
Author(s):  
H. Okumura ◽  
K. Balakrishnan ◽  
G. Feuillet ◽  
K. Ohta ◽  
H. Hamaguchi ◽  
...  
Keyword(s):  
Growth Parameters ◽  
In Situ Monitoring ◽  
Molecular Beam Epitaxy Growth ◽  
X Ray Diffraction ◽  
Gas Source ◽  
Surface Reconstructions ◽  
Cubic Gan ◽  
Gas Source Mbe

ABSTRACTBy monitoring RHEED reconstruction patterns during gas source molecular beam epitaxy growth, the optimization of the growth for cubic GaN was carried out successfully. Cubic GaN epilayer having a X-ray diffraction width of 16min and a low temperature photoluminescence emission width of 19meV was obtained on a 3C-SiC substrate by adjusting the effective III/V ratio in-situ during the growth, which can be inferred from the surface reconstruction transitions. It was found that the surface reconstructions of cubic GaN surfaces are good indices for the optimization of growth parameters.

Mechanism of Metalorganic MBE Growth of High Quality AlN on Si (111).

2004 ◽  
Vol 831 ◽  
Author(s):  
I. Gherasoiu ◽  
S. Nikishin ◽  
G. Kipshidze ◽  
B. Borisov ◽  
A. Chandolu ◽  
...  
Keyword(s):  
Growth Rate ◽  
Growth Parameters ◽  
In Situ Monitoring ◽  
X Ray Diffraction ◽  
High Quality ◽  
Mbe Growth ◽  
Gas Source ◽  
Surface Hydrogen ◽  
Nitrogen Bonds ◽  
Gas Source Mbe

ABSTRACTAlN constitutes the buffer layer of choice for the growth of GaN on all common substrates and its crystalline quality and surface morphology determine many of the properties of the overgrown epitaxial structure. This work systematically investigates the MOMBE growth of high quality AlN on Si (111) using trimethylaluminum and ammonia as sources of aluminum and nitrogen, respectively. Metalorganic MBE represents a hybrid growth technique that offers a combination of growth precision, in-situ monitoring and ease of source management with the promise of high material quality. We demonstrate very efficient growth, with the growth rate in excess of 500 nm/h and low ammonia consumption of less than 1 sccm. Over the entire domain of growth parameters, the surface roughness remained in the range from 12 to 53 Å rms for AlN layers up to 1000 nm thick. Here, the low values of the roughness are associated to the low growth temperature (760 °C), behavior that contrasts with that usually observed in gas source MBE with elemental Al source. X-ray diffraction linewidth as narrow as 141 arcsec has been demonstrated for samples grown under stoichiometric conditions. High temperature of the ammonia injector promotes the transition to the two-dimensional growth, while reducing the growth rate, pointing out the importance of surface hydrogen. We demonstrate that hydrogen plays an important role in the MOMBE process acting as a surfactant and passivating surface nitrogen bonds.

Drastic Change in the Gan Film Quality by In-Situ Controlling Surface Reconstructions In Gsmbe

1997 ◽  
Vol 482 ◽  
Author(s):  
X. Q. Shen ◽  
S. Tanaka ◽  
S. Iwai ◽  
Y. Aoyagi
Keyword(s):  
Growth Conditions ◽  
High Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Gas Source ◽  
Atomic Force ◽  
Surface Reconstructions ◽  
Gan Film

AbstractGaN growth was performed on 6H-SiC (0001) substrates by gas-source molecular beam epitaxy (GSMBE), using ammonia (NH3) as a nitrogen source. Two kinds of reflection high-energy electron diffraction (RHEED) patterns, named (1×1) and (2×2), were observed during the GaN growth depending on the growth conditions. By careful RHEED study, it was verified that the (1×1) pattern was corresponded to a H2-related nitrogen-rich surface, while (2×2) pattern was resulted from a Ga-rich surface. By x-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM) characterizations, it was found that the GaN quality changed drastically grown under different RHEED patterns. GaN film grown under the (1×1) RHEED pattern showed much better qualities than that grown under the (2×2) one.

Growth of Cubic GaN by MBE and Its Properties

1996 ◽  
Vol 449 ◽  
Author(s):  
S. Yoshida ◽  
H. Okumura ◽  
G. Feuillet ◽  
P. Hacke ◽  
K. Balakrishnan
Keyword(s):  
Growth Conditions ◽  
Mbe Growth ◽  
Gas Source ◽  
N Source ◽  
Growth Method ◽  
Cubic Gan ◽  
Substrate Surfaces ◽  
Gas Source Mbe ◽  
Equilibrium Growth

ABSTRACTMolecular beam epitaxy (MBE) technique is a useful method to grow III-V nitrides, especially those having a metastable crystal structure, like cubic GaN (c-GaN), because of the capability of in situ observation of growing surfaces and its non-equilibrium growth mechanism. We have grown c-GaN on GaAs and 3C-SiC substrates by gas source MBE using dimethylhydrazine or activated nitrogen beam as an N source, and measured their luminescent and optical properties. This paper summarizes the MBE growth and properties of c-GaN, comparing with those of hexagonal one, and the control of the crystal structures is discussed in terms of growth method, orientation of substrate surfaces and growth conditions.

In Situ Characterization of Ain Films Grown on Silicon by MOCVD

1998 ◽  
Vol 512 ◽  
Author(s):  
A. D. Serra ◽  
H. H. Richardson
Keyword(s):  
Film Growth ◽  
Growth Parameters ◽  
Emission Spectra ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
In Situ Characterization ◽  
X Ray ◽  
Ir Emission

ABSTRACTFilms of AIN were grown on Si under vacuum pressure at 900°C and examined ex situ with infrared reflectance spectroscopy and microscopy, scanning electron microscopy, x-ray diffraction and rutherford backscattering spectroscopy. Collection of IR emission spectra for in situ characterization was successful and used to identify growth parameters during film growth.

The Use of Advanced Analytical Techniques for Characterization of the Chemical, Physical, and Crystallographic Nature of a Surface

1973 ◽  
Vol 31 ◽  
pp. 132-133 ◽  
Author(s):  
R. E. Herfert
Keyword(s):  
Surface Characterization ◽  
Analytical Techniques ◽  
X Ray Diffraction ◽  
Depth Of Penetration ◽  
X Ray ◽  
The Past ◽  
Transmission Electron ◽  
Scanning Electron

Studies of the nature of a surface, either metallic or nonmetallic, in the past, have been limited to the instrumentation available for these measurements. In the past, optical microscopy, replica transmission electron microscopy, electron or X-ray diffraction and optical or X-ray spectroscopy have provided the means of surface characterization. Actually, some of these techniques are not purely surface; the depth of penetration may be a few thousands of an inch. Within the last five years, instrumentation has been made available which now makes it practical for use to study the outer few 100A of layers and characterize it completely from a chemical, physical, and crystallographic standpoint. The scanning electron microscope (SEM) provides a means of viewing the surface of a material in situ to magnifications as high as 250,000X.

A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Gan

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

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