Epitaxial CeO2 on Silicon Substrates and the Potential of Si/CeO2/Si for SOI Structures

1997 ◽  
Vol 474 ◽  
Author(s):  
A. H. Morshed ◽  
S. X. Liu ◽  
R. Leonard ◽  
F. G. Mcintosh ◽  
N. A. El-Masry ◽  
...  
Keyword(s):  
Optical Properties ◽  
Single Crystal ◽  
High Vacuum ◽  
Silicon On Insulator ◽  
Ultra High Vacuum ◽  
Vacuum System ◽  
Silicon Substrates ◽  
Cubic Structure ◽  
Lattice Matched ◽  
Initial Results

ABSTRACTCeO2 is nearly lattice matched to Si and has the CaF2 cubic structure thus it offers the potential for the epitaxial growth of an insulating film on Si. Laser ablation of a CeO2 target in an ultra high vacuum system was used for the deposition of single crystal CeO2. The effect of post growth thermal and rapid thermal annealing in O2, N2 and Ar atmosphere was found to have pronounced effects on the electrical properties measured by C-V and the optical properties measured by photoluminescence.We report on our initial results for the growth of epitaxial Si on the deposited CeO2 using low pressure CVD. Both RHEED and TEM studies showed that single crystal epitaxial Si was deposited on CeO2. The details of the Si deposition on CeO2 films for potential of SOI (silicon on insulator) structures will be discussed.

scholarly journals Characterization of Cobalt Phthalocyanine Thin Film on Silicon Substrate Using Spectroscopic Ellipsometry

2021 ◽  
Vol 66 (7) ◽  
pp. 562
Author(s):  
K.M. Al-Adamat ◽  
H.M. El-Nasser
Keyword(s):  
Optical Properties ◽  
Spectroscopic Ellipsometry ◽  
Silicon Substrate ◽  
High Vacuum ◽  
Structural Features ◽  
Ultra High Vacuum ◽  
Vacuum System ◽  
Cobalt Phthalocyanine ◽  
Mean Square

The cobalt phthalocyanine film (CoPc) was prepared by an ultra-high vacuum system onto a silicon substrate. Structural features and optical properties of the organic semiconductor CoPc has been determined with the use of spectroscopic ellipsometry over the wavelength interval 300–1000 nm. By restricting it to 900–1000 nm the film thickness is determined, and, by the point-by-point fit, the behavior of the dielectric function is established in the entire spectral region. Thus, the optical properties are determined from spectral ellipsometric data using mathematical models based on Gaussian oscillators, which have led to an excellent fit to the experimental data with a relatively low mean square error. Cobalt phthalocyanine was treated as a uniaxial material.

Structure of Palladium Single-Crystal Films Prepared by Flash Evaporation onto (001) NaCl Substrates

1970 ◽  
Vol 28 ◽  
pp. 456-457
Author(s):  
L. E. Murr ◽  
G. Wong
Keyword(s):  
Single Crystal ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
High Rate ◽  
Flash Evaporation ◽  
Optimum Load ◽  
Single Crystal Films ◽  
Crystal Films ◽  
A Current

Palladium single-crystal films have been prepared by Matthews in ultra-high vacuum by evaporation onto (001) NaCl substrates cleaved in-situ, and maintained at ∼ 350° C. Murr has also produced large-grained and single-crystal Pd films by high-rate evaporation onto (001) NaCl air-cleaved substrates at 350°C. In the present work, very large (∼ 3cm2), continuous single-crystal films of Pd have been prepared by flash evaporation onto air-cleaved (001) NaCl substrates at temperatures at or below 250°C. Evaporation rates estimated to be ≧ 2000 Å/sec, were obtained by effectively short-circuiting 1 mil tungsten evaporation boats in a self-regulating system which maintained an optimum load current of approximately 90 amperes; corresponding to a current density through the boat of ∼ 4 × 104 amperes/cm2.

AlN thin films fabricated by ultra-high vacuum electron-beam evaporation with ammonia for silicon-on-insulator application

2005 ◽  
Vol 239 (3-4) ◽  
pp. 327-334 ◽  
Author(s):  
Ming Zhu ◽  
Peng Chen ◽  
Ricky K.Y. Fu ◽  
Weili Liu ◽  
Chenglu Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
High Vacuum ◽  
Electron Beam Evaporation ◽  
Silicon On Insulator ◽  
Ultra High Vacuum

The design and study of a compact bakeable ultra-high vacuum system for calibrating absolutely low pressure gauges

Vacuum ◽  
1977 ◽  
Vol 27 (9) ◽  
pp. 511-517 ◽  
Author(s):  
K.J. Close ◽  
R.S. Vaughan-Watkins ◽  
J Yarwood
Keyword(s):  
High Vacuum ◽  
Low Pressure ◽  
Ultra High Vacuum ◽  
Vacuum System

scholarly journals Why Pressure Scales Cause So Much Confusion

1993 ◽  
Vol 1 (8) ◽  
pp. 5-6
Author(s):  
Anthony D. Buonaquisti
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Ambient Pressure ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Vacuum System ◽  
Scanning Auger Microprobe ◽  
The Mean ◽  
Scanning Electron

Pressure scales can be extremely confusing to new operators. This is not surprising. To my mind, there are three primary areas of confusion.Firstly, the pressure of gas inside an instrument changes over many orders of magnitude during pumpdown. The change is about 9 orders of magnitude for a traditional Scanning Electron Microscope and about 13 orders of magnitude for an ultra-high vacuum instrument such as a Scanning Auger Microprobe.To give an idea about the scale of change involved in vacuum, consider that the change in going from ambient pressure to that inside a typical ultra high vacuum system is like comparing one meter with the mean radius of the planet Pluto's orbit. The fact is that we don't often get to play with things on that scale. As a consequence, many of us have to keep reminding ourselves that 1 X 10-3 is one thousand times the value of 1 X 10-6 - not twice the value.

scholarly journals Optical contamination control in the Advanced LIGO ultra-high vacuum system

2013 ◽  
Author(s):  
Margot H. Phelps ◽  
Kaitlin E. Gushwa ◽  
Calum I. Torrie
Keyword(s):  
High Vacuum ◽  
Ultra High Vacuum ◽  
Vacuum System ◽  
Contamination Control

scholarly journals Symmetry-Induced Structuring of Ultrathin FeO and Fe3O4 Films on Pt(111) and Ru(0001)

Nanomaterials ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 719
Author(s):  
Natalia Michalak ◽  
Zygmunt Miłosz ◽  
Gina Peschel ◽  
Mauricio Prieto ◽  
Feng Xiong ◽  
...  
Keyword(s):  
Iron Oxide ◽  
Single Crystal ◽  
High Vacuum ◽  
Oxide Films ◽  
Ultra High Vacuum ◽  
Mutual Orientation ◽  
High Catalytic Activity ◽  
Plane Orientation ◽  
Metal Single Crystal ◽  
Iron Oxide Films

Iron oxide films epitaxially grown on close-packed metal single crystal substrates exhibit nearly-perfect structural order, high catalytic activity (FeO) and room-temperature magnetism (Fe3O4). However, the morphology of the films, especially in the ultrathin regime, can be significantly influenced by the crystalline structure of the used support. This work reports an ultra-high vacuum (UHV) low energy electron/synchrotron light-based X-ray photoemission electron microscopy (LEEM/XPEEM) and electron diffraction (µLEED) study of the growth of FeO and Fe3O4 on two closed-packed metal single crystal surfaces: Pt(111) and Ru(0001). The results reveal the influence of the mutual orientation of adjacent substrate terraces on the morphology of iron oxide films epitaxially grown on top of them. On fcc Pt(111), which has the same mutual orientation of adjacent monoatomic terraces, FeO(111) grows with the same in-plane orientation on all substrate terraces. For Fe3O4(111), one or two orientations are observed depending on the growth conditions. On hcp Ru(0001), the adjacent terraces of which are ‘rotated’ by 180° with respect to each other, the in-plane orientation of initial FeO(111) and Fe3O4(111) crystallites is determined by the orientation of the substrate terrace on which they nucleated. The adaptation of three-fold symmetric iron oxides to three-fold symmetric substrate terraces leads to natural structuring of iron oxide films, i.e., the formation of patch-like magnetite layers on Pt(111) and stripe-like FeO and Fe3O4 structures on Ru(0001).

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