Comparison and Reproducibility of H-Passivation of Si(100) with HF in Methanol, Ethanol, Isopropanol and Water by IBA, TMAFM, and FTIR'

1997 ◽  
Vol 477 ◽  
Author(s):  
V. Atluri ◽  
N. Herbots ◽  
D. Dagel ◽  
H. Jacobsson ◽  
M. Johnson ◽  
...  

ABSTRACTThree different HF:alcohol solutions are investigated to etch native SiO2 and passivate Si(100) surfaces with H which can the be desorbed at low temperature (T < 600°C). The resulting passivated Si(100) surfaces are compared using as a reference Si(100) passivated by a standard aqueous HF: solution (1:98 parts of HF: H2O). After a modified RCA cleaning, Si(100) etched by HF:Methanol, HF:IPA, or HF:Ethanol, is characterized by Ion Beam Analysis (IBA), Tapping Mode Atomic Force Microscope (TMAFM), and Fourier Transform Infrared Spectroscopy (FTIR). The absolute coverage of O and C is measured by nuclear reaction analysis (NRA) combined with ion channeling at 3.05 MeV for O and 4.265 MeV for C. Hydrogen is measured via the elastic recoil detection (ERD) of 4He2+ at 2.8 MeV.Compared to aqueous HF, HF:alcohol passivates Si(100) leaving a lower O residue by an average factor of 0.62 and a similar C residue. H coverage is higher by an average factor of 1.43. Surface coverages are found to be reproducible in average by 1.4 × 1014 atoms/cm2 for C, and by 1.25 × 1014 atoms/cm2 for O when measured by IBA on samples identically processed. H coverage is reproducible within 5.5% when measured by ERD.Selective area analysis by TMAFM shows that an increasing number of particulates is responsible for the apparent increase in root-mean -square (rms) surface roughness when the rms is measured over a whole image. Taking this effect into account, all passivated surfaces exhibit similar roughness when compared to the original Si(100) surface with little difference between alcohols and with the reference aqueous HF solution.FTIR in the attenuation total reflection (ATR) mode detected SiHx species mostly as a dihydride. Both IBA and FTIR detected significant levels of oxygen on surfaces passivated HF in alcohol and aqueous HF. This indicates that while Si(100) exhibits more H when passivated with HF in alcohol and can be desorbed at lower temperature than when treated with aqueous HF, H is not bonded to Si only but likely bonds into a more complex surface termination, such as SiOH.

1998 ◽  
Vol 513 ◽  
Author(s):  
V. Atluri ◽  
N. Herbots

ABSTRACTSi(100) is H-passivated via a modified pre-RCA cleaning followed by etching in HF:alcohol, to produce ordered (1 × 1) templates which desorb at low temperature (T ≥ 600°C). Four sets of 12 wafers, each set processed identically, are used to test reproducibility, and are characterized by Ion Beam Analysis (IBA), Tapping Mode Atomic Force Microscope (TMAFM), and Fourier Transform Infrared Spectroscopy (FTIR). The absolute coverage of oxygen and carbon is measured by ion channeling combined with nuclear resonance at 3.05 MeV for oxygen and 4.265 MeV for carbon, improving the signal to noise by a factor 10 for oxygen and by 120 for carbon. It is then possible for the first time to measure ordering of oxygen atoms with respect to the surface by comparing the amount of oxygen from rotating random spectra to the disordered oxygen measured by channeling. Hydrogen is measured via the elastic recoil detection (ERD) of 4He2+ at 2.8 MeV.Si(100) etched in HF:methanol after a modified preliminary RCA cleaning yields the cleanest surface. The data suggest that Si(100) passivated by HF in alcohol is terminated by an ordered hydroxide layer, which desorbs at lower temperatures than the more refractory Si02.


2005 ◽  
Vol 483-485 ◽  
pp. 287-290
Author(s):  
H. Colder ◽  
M. Morales ◽  
Richard Rizk ◽  
I. Vickridge

Co-sputtering of silicon and carbon in a hydrogenated plasma (20%Ar-80%H2) at temperatures, Ts, varying from 200°C to 600°C has been used to grow SiC thin films. We report on the influence of Ts on the crystallization, the ratio Si/C and the hydrogen content of the grown films. Film composition is determined by ion beam analysis via Rutherford backscattering spectrometry, nuclear reaction analysis via the 12C(d,p0)13C nuclear reaction and elastic recoil detection analysi(ERDA) for hydrogen content. Infrared absorption (IR) has been used to determine the crystalline fraction of the films and the concentration of the hydrogen bonded to Si or to C. Complementary to IR, bonding configuration has been also characterized by Raman spectroscopy. As Ts is increased, the crystalline fraction increases and the hydrogen content decreases, as observed by both ERDA and IR. It also appears that some films contain a few Si excess, probably located at the nanograin boundaries.


2020 ◽  
Vol 4 (4) ◽  
pp. 40
Author(s):  
Keisuke Yasuda

The time-of-flight elastic recoil detection analysis (TOF-ERDA) method is one of the ion beam analysis methods that is capable of analyzing light elements in a sample with excellent depth resolution. In this method, simultaneous measurements of recoil ion energy and time of flight are performed, and ion mass is evaluated. The energy of recoil ions is calculated from TOF, which gives better energy resolution than conventional Silicon semiconductor detectors (SSDs). TOF-ERDA is expected to be particularly applicable for the analysis of light elements in thin films. In this review, the principle of TOF-ERDA measurement and details of the measurement equipment along with the performance of the instrumentation, including depth resolution and measurement sensitivity, are described. Examples of TOF-ERDA analysis are presented with a focus on the results obtained from the measurement system developed by the author.


1997 ◽  
Vol 504 ◽  
Author(s):  
J. C. Barbour ◽  
B. G. Potter

ABSTRACTHydrogen in deposited optical ceramics can modify the optical properties, and therefore the role of the hydrogen needs to be understood to control its effects. Erbium-doped amorphous alumina films were deposited using simultaneous electron beam evaporation of aluminum and erbium while bombarding the sample with 30 eV 02+ ions from an electron cyclotron resonance (ECR) plasma. The hydrogen content was measured, using elastic recoil detection, as a function of isochronal annealing treatments. The data was fit to a simple trap-release model in order to determine an effective activation energy for the thermal release of H from alumina and Er-doped alumina. The intensity of the ion-beam stimulated luminescence from these samples was monitored in the visible and near infrared regions as a function of the thermal treatments. In order to gain a better understanding of the influence of hydrogen, the ionoluminescence (IL) data from samples containing hydrogen were fit with a simple linear equation.


1991 ◽  
Vol 235 ◽  
Author(s):  
J. C. Barbour ◽  
H. J. Stein

ABSTRACTThe incorporation of hydrogen into silicon nitride films grown downstream from an electron cyclotron resonance (ECR) plasma decreased rapidly with increasing substrate temperature (100–600°C). Fourier transform infra-red (FTIR) spectroscopy showed that the hydrogen in the as-grown material was primarily bonded to nitrogen. However, an applied bias of -200 V caused an increase in the number of Si-H bonds relative to N-H bonds, as a result of increased ion-beam damage. In addition, ion irradiation of an as-grown film with 175 keV Ar+ at room temperature showed that H transferred from N-H bonds to Si-H bonds without a loss of H. Elastic recoil detection (ERD) and FTIR of thermally annealed films showed that the stability of H incorporated during deposition increased with deposition temperature, and that the N-H bond was more stable than the Si-H bond above 700°C. Deuterium plasma treatments, at 600°C, of annealed films caused isotopic substitution with a conservation of bonds. Therefore, hydrogen loss from annealed films is apparently accompanied by a reduction in dangling bonds.


2002 ◽  
Vol 17 (2) ◽  
pp. 271-274 ◽  
Author(s):  
W. Jiang ◽  
W. J. Weber ◽  
C. M. Wang ◽  
Y. Zhang

Single-crystal 6H–SiC wafers were irradiated at 300 K with 50 keV He+ ions to fluences ranging from 7.5 to 250 He+/nm2. Ion-channeling experiments with 2.0 MeV He+ Rutherford backscattering spectrometry were performed to determine the depth profile of Si disorder. The measured profiles are consistent with SRIM-97 simulations at and below 45 He+/nm2 but higher than the SRIM-97 prediction at both 100 and 150 He+/nm2. Cross-sectional transmission electron microscopy study indicated that the volume expansion of the material is not significant at intermediate damage levels. Results from elastic recoil detection analysis suggested that the implanted He atoms diffuse in a high-damage regime toward the surface.


2007 ◽  
Vol 539-543 ◽  
pp. 3551-3556 ◽  
Author(s):  
Mihail Ionescu ◽  
Bryce Richards ◽  
Keith McIntosh ◽  
R. Siegele ◽  
E. Stelcer ◽  
...  

Thin SiN film deposited on Si by plasma enhanced chemical vapour deposition (PECVD) is used for surface passivation of Si. During the PECVD process Hydrogen is incorporated into the SiN film, and the passivation properties of the resulting SiNx:H layers play an important role in enhancing the energy conversion efficiency of solar cells. It is believed that the Hydrogen present in SiNx:H is responsible for this enhancement, and therefore its concentration in the passivating layer is an important parameter. The Hydrogen composition and its depth profile in thin SiNx:H films of 20nm to 200nm was measured by elastic recoil detection analysis (ERDA), using a 1.7MeV He+ ion beam of (1x2)mm2, generated by a high stability 2MV Tandetron ion beam accelerator. Simultaneously, Rutherford backscattering (RBS) spectra were recorded for each sample. The results show that the Hydrogen concentration in the SiNx:H layers is dependent of the deposition conditions. Also, Hydrogen was found to be homogenously distributed across the SiNx:H layer thickness, and the SiNx:H/Si interfaces were well defined.


1986 ◽  
Vol 81 ◽  
Author(s):  
H. Lin ◽  
L. E. Sehberling ◽  
P. F. Lyman ◽  
D. P. Pope

AbstractWe have investigated the lattice location of Ta in Ni3Al using Rutherford backscattering with channeling, and nuclear reaction analysis. An 8 MeV 4He ion beam was directed along the < 100> crystallographic axis of the Ni75Al24Ta single crystal. A silicon surface barrier detector was used to analyze 4He ions backscattered from Ni and Ta atoms. Neutrons generated from Al by the 27Al(4He,n)30P reaction were detected by a large volume liquid scintillator placed outside of the scattering chamber. Essentially all of the Ta atoms were found to be substitutional, as determined by the Ta channeling minimum yield. A comparison of the width of the channeling angular scan for Al, Ni and Ta indicated that the Ta atoms are predominantly distributed on the Ni sites. This result is in conflict with expectations based on the ternary phase diagram.


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