Oxidation Resistance of Ultrathin Silicon Nitride Passivation Layers on Si(100)

1997 ◽  
Vol 477 ◽  
Author(s):  
A. Kamath ◽  
B. Y. Kim ◽  
P. M. Blass ◽  
Y. M. Sun ◽  
J. M. White ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Oxidation Resistance ◽  
Photoelectron Spectroscopy ◽  
Thermal Processing ◽  
Oxidation Process ◽  
Rapid Thermal Processing ◽  
Tantalum Pentoxide ◽  
Process Window ◽  
X Ray ◽  
Passivation Layers

ABSTRACTThe oxidation resistance of ultrathin (5–15Å) thermally grown silicon nitride (Si3N4), in conditions relevant to the deposition/annealing of Tantalum Pentoxide (Ta2O5) in a Rapid Thermal Processing (RTP) environment, has been non destructively examined using X-Ray Photoelectron Spectroscopy (XPS). This has been carried out with a view to establishing a process window for the deposition of Ta2O5 on a Rapid Thermally Nitrided (RTN) Si(100) surface, with negligible oxidation of the Si(100) substrate. A physical model of the oxidation process of these films is also proposed.

Growth Chemistry of Ultrathin Silicon Nitride and Oxynitride Passivation Layers on Si(100)

1997 ◽  
Vol 477 ◽  
Author(s):  
A. Kamath ◽  
B. Y. Kim ◽  
P. M. Blass ◽  
Y. M. Sun ◽  
J. M. White ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Surface Analysis ◽  
Diffusion Barrier ◽  
Photoelectron Spectroscopy ◽  
Interface Properties ◽  
X Ray ◽  
Bonding Structure ◽  
Thermal Growth ◽  
High K ◽  
Passivation Layers

ABSTRACTWe have studied the thermal growth chemistry and bonding structure of three promising ultrathin (5–20Å), nitrogen rich passivation layers on Si(100), namely-Si3N4, NO/Si(100) grown oxynitride and NO annealed SiO2. These films are intended to serve as substrates with excellent diffusion barrier/interface properties during deposition of high- K dielectrics such as Ta2O5, with tSiO2 equivalent <30Å for ULSI applications. In this paper we show that it is possible to form films with a tailored composition and nitrogen profile using techniques that can easily be integrated with existing silicon processing technology. Alternating growth and surface analysis by X-Ray Photoelectron Spectroscopy (XPS) is used to non destructively characterize the growth.

Novel Multilayer Process for CuInSe2 Thin Film Formation by Rapid Thermal Processing

1997 ◽  
Vol 485 ◽  
Author(s):  
Chih-hung Chang ◽  
Billy Stanbery ◽  
Augusto Morrone ◽  
Albert Davydov ◽  
Tim Anderson
Keyword(s):  
Thermal Processing ◽  
Physical Vapor Deposition ◽  
Film Formation ◽  
Rapid Thermal Processing ◽  
Precursor Film ◽  
Bilayer Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Deposition Parameters ◽  
Cuinse2 Thin Film

AbstractCuInSe2 thin films have been synthesized from binary precursors by Rapid Thermal Processing (RTP) at a set-point temperature of 290°C for 70 s. With appropriate processing conditions no detrimental Cu2-xSe phase was detected in the CIS films. The novel binary precursor approach consisted of a bilayer structure of In-Se and Cu-Se compounds. This bilayer structure was deposited by migration enhanced physical vapor deposition at a low temperature (200°C) and the influence of deposition parameters on the precursor film composition was determined. The bilayer structure was then processed by RTP and characterized for constitution by X-ray diffraction and for composition by Wavelength Dispersive X-ray Spectroscopy.

Contactless Measurements of Slip Lines Intentionally Introduced in Si Wafers During Rapid Thermal Processing

1991 ◽  
Vol 224 ◽  
Author(s):  
A. Usami ◽  
H. Shiraki ◽  
H. Fujiwara ◽  
R. Abe ◽  
N. Osamura ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Signal Intensity ◽  
Carrier Lifetime ◽  
Temperature Drop ◽  
Rapid Thermal Processing ◽  
X Ray ◽  
Slip Lines ◽  
Recombination Centers ◽  
Microwave Probe ◽  
Good Agreement

AbstractThe slip lines introduced in Si wafers during rapid thermal processing (RTP) were revealed with focused reflectance microwave probe (RMP) method. The signal intensity of RMP which is related to optically injected excess carrier concentration decreases at slip lines. The region in which the signal intensity decreased is in good agreement with results of X-ray topography and theoretical analysis considering thermal stress caused by temperature drop at the wafer periphery during RTP. According these results, it is considered that carrier lifetime is decreased by slip dislocations which are effective recombination centers.

Photovoltaic properties of silicon nanocrystals in silicon nitride prepared by ammonia sputtering

2015 ◽  
Vol 08 (05) ◽  
pp. 1550052
Author(s):  
Xiaobo Chen
Keyword(s):  
Silicon Nitride ◽  
Flow Rate ◽  
Photoelectron Spectroscopy ◽  
Silicon Nanocrystals ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Photovoltaic Properties ◽  
X Ray ◽  
Xps Characterization

In this work, we present an investigation of the photovoltaic properties of low-temperature (700°C annealing temperature) prepared P -doped Silicon nanocrystals ( Si   NCs ) in silicon nitride by ammonia sputtering followed by rapid thermal annealing (RTA). We examined how the flow rate of NH3influenced the structural properties of the annealed films by using Raman scattering, grazing incidence X-ray diffraction (GI XRD) and transmission electron microscopy (TEM), it was found that the appropriate flow rate of NH3is 3 sccm. For the sample deposited at the flow rate of 3 sccm, TEM image showed that Si   NCs were formed with a mean size about 3.7 nm and the density of ~ 2.1 × 1012cm-2; X-ray photoelectron spectroscopy (XPS) characterization showed the existence of Si – P bonds, indicating effective P doping; the average absorptance of higher than 65% and a significant amount of photocurrent makes it suitable for photoactive. Moreover, the experimental P -doped Si   NCs : Si3N4/ p - Si heterojunction solar cell has been fabricated, and the device performance was studied. The photovoltaic device fabricated exhibits an open-circuit voltage (VOC) and a short-circuit current density (JSC) of 470 mV and 3.25 mA/cm2, respectively.

Strong Polarity and Bond Characterization of Nanostructured Silicon Nitride Solids

1992 ◽  
Vol 286 ◽  
Author(s):  
Lide Zhang ◽  
Chimei Mo ◽  
Tao Wang ◽  
Cunyi Xie
Keyword(s):  
Silicon Nitride ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Bond Properties ◽  
Dielectric Measurements ◽  
X Ray ◽  
Nanostructured Silicon ◽  
Spin Resonance ◽  
Measuring Frequency

ABSTRACTNanostructured silicon nitride solids (NANO–SSNS) were investigated by x–ray photoelectron spectroscopy (XPS), electron spin resonance (ESR) and dielectric measurements. It is found that the dielectric constant of NANO–SSNS depends strongly on the measuring frequency, f. When f<100Hz, at room temperature it is forty times as much as that of conventional Si3N4. ESR measurements show that a large number of unbinding electrons exist in interfaces. This suggests that the NANO–SSNS possess strong polarity. The study on the bond properties indicates that a large number of unsaturated and dangling bonds exist in interfaces of NANO–SSNS.

Ellipsometric and XPS Studies of 4H-SiC/SiO2 Interfaces, and Sacrificial Oxide Stripped 4H-SiC Surfaces

2006 ◽  
Vol 527-529 ◽  
pp. 1027-1030 ◽  
Author(s):  
Owen J. Guy ◽  
L. Chen ◽  
G. Pope ◽  
K.S. Teng ◽  
T. Maffeis ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Interfacial Layer ◽  
Oxidation Process ◽  
Silicon Layer ◽  
Subsequent Removal ◽  
X Ray ◽  
Mos Devices ◽  
Device Processing ◽  
Form Features ◽  
Silicon Oxygen

The investigation of the silicon carbide surface after a sacrificial silicon oxidation technique is reported. Oxidation of SiC is a necessary step in the fabrication of MOS devices and device termination features such as field plates. Device processing requires the etching of windows through the oxide layer to form features such as metal / SiC contacts. However, this work indicates that a thin interfacial Si-O-C layer is still present after etching the oxide with hydrofluric acid (HF). Ellipsometry and X-ray photoelectron spectroscopy (XPS) have been used to evaluate this interfacial layer formed after oxide growth and after subsequent removal of oxide layers. An XPS analysis of the surface after removal of the oxide revealed that silicon, oxygen and carbon were all present in the remaining layer, which could not be removed by annealing at temperatures up to 1000°C. The Si-O-C layer could be eliminated by altering the oxidation conditions or by using a sacrificial silicon layer oxidation process. Ni Schottky barrier diodes fabricated on the 4H-SiC surface after removal of the oxide, displayed slightly higher ideality factors than those of diodes fabricated on untreated 4H-SiC samples.

Preparation of CIGSS Thin-Film Solar Cells by Rapid Thermal Processing

2006 ◽  
Vol 129 (3) ◽  
pp. 323-326
Author(s):  
Sachin S. Kulkarni ◽  
Jyoti S. Shirolikar ◽  
Neelkanth G. Dhere
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Electrical Characterization ◽  
Soda Lime ◽  
Thin Film Solar Cells ◽  
Soda Lime Glass ◽  
X Ray

Rapid thermal processing (RTP) provides a way to rapidly heat substrates to an elevated temperature to perform relatively short duration processes, typically less than 2–3min long. RTP can be utilized to minimize the process cycle time without compromising process uniformity, thus eliminating a bottleneck in CuIn1−xGaxSe2−ySy (CIGSS) module fabrication. Some approaches have been able to realize solar cells with conversion efficiencies close or equal to those for conventionally processed solar cells with similar device structures. A RTP reactor for preparation of CIGSS thin films on 10cm×10cm substrates has been designed, assembled, and tested at the Florida Solar Energy Center’s PV Materials Lab. This paper describes the synthesis and characterization of CIGSS thin-film solar cells by the RTP technique. Materials characterization of these films was done by scanning electron microscopy, x-ray energy dispersive spectroscopy, x-ray diffraction, Auger electron spectroscopy, electron probe microanalysis, and electrical characterization was done by current–voltage measurements on soda lime glass substrates by the RTP technique. Encouraging results were obtained during the first few experimental sets, demonstrating that reasonable solar cell efficiencies (up to 9%) can be achieved with relatively shorter cycle times, lower thermal budgets, and without using toxic gases.

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