Phase Transitions During Ion-Beam Irradiation of the Perovskite-structure Oxides

1997 ◽  
Vol 481 ◽  
Author(s):  
A. Meldrum ◽  
L. A. Boatner ◽  
R. C. Ewingt
Keyword(s):  
Perovskite Structure ◽  
Low Dose ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Heavy Ion ◽  
Dislocation Loops ◽  
Ion Beam Irradiation ◽  
Melting Temperatures ◽  
Heavy Ion Irradiation ◽  
Domain Boundaries

ABSTRACTSeveral perovskite-structure oxide compounds, including CaTiO3, SrTiO3, BaTiO3, KNbO3, and KTaO3 were irradiated by 800 keV Kr+ ions in order to investigate and compare their response to heavy-ion irradiation. The critical amorphization temperature Tc, above which amorphization could not be induced, was found to increase in the order SrTiO3 → CaTiO3 → BaTiO3 → KNbO3 → KTaO3. No single physical parameter explains the observed sequence, although Tc correlates well with the melting temperatures. The well-known solid state phase transformations in these materials did not have a significant effect on the dose required for amorphization. Domain boundaries were observed in the pristine samples; however, after only a low dose, the boundaries became poorly defined and, with increasing dose, eventually disappeared. Dislocation loops were observed to aggregate at the domain boundaries.

scholarly journals Significance of Heavy-Ion Beam Irradiation-Induced Avermectin B1a Production by EngineeredStreptomyces avermitilis

2017 ◽  
Vol 2017 ◽  
pp. 1-13
Author(s):  
Shu-Yang Wang ◽  
Yong-Heng Bo ◽  
Xiang Zhou ◽  
Ji-Hong Chen ◽  
Wen-Jian Li ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Heavy Ion ◽  
Streptomyces Avermitilis ◽  
Specific Productivity ◽  
Original Strain ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Heavy Ion Irradiation ◽  
Heavy Ion Beam

Heavy-ion irradiation technology has advantages over traditional methods of mutagenesis. Heavy-ion irradiation improves the mutation rate, broadens the mutation spectrum, and shortens the breeding cycle. However, few data are currently available regarding its effect onStreptomyces avermitilismorphology and productivity. In this study, the influence of heavy-ion irradiation onS. avermitiliswhen cultivated in approximately 10 L stirred-tank bioreactors was investigated. The specific productivity of the avermectin (AVM) B1a-producing mutantS. avermitilis147-G58 increased notably, from 3885 to 5446 μg/mL, approximately 1.6-fold, compared to the original strain. The mycelial morphology of the mutant fermentation processes was microscopically examined. Additionally, protein and metabolite identification was performed by using SDS-PAGE, 2- and 3-dimensional electrophoresis (2DE and 3DE). The results showed that negative regulation gene deletion of mutants led to metabolic process upregulating expression of protein and improving the productivity of an avermectin B1a. The results showed that the heavy-ion beam irradiation dose that corresponded to optimal production was well over the standard dose, at approximately 80 Gy at 220 AMeV (depending on the strain). This study provides reliable data and a feasible method for increasing AVM productivity in industrial processes.

scholarly journals Effects of the Surface on Displacement Cascades Produced by Heavy-Ion Irradiation of Ni3Al and Cu3Au

1996 ◽  
Vol 439 ◽  
Author(s):  
S. Müller ◽  
M. L. Jenkins ◽  
C. Abromeit ◽  
H. Wollenberger
Keyword(s):  
Ion Irradiation ◽  
Incident Angle ◽  
Ion Beam ◽  
Heavy Ion ◽  
Small Population ◽  
Dislocation Loops ◽  
Near Surface ◽  
Ion Energy ◽  
Heavy Ion Irradiation ◽  
Transmission Electron

AbstractStereo transmission electron microscopy has been used to characterise the distribution in depth of disordered zones and associated dislocation loops in the ordered alloys Ni3Al and Cu3Au after heavy ion irradiation, most extensively for Ni3Al irradiated with 50 keV Ta+ ions at a temperature of 573 K. The Cu3Au specimen was irradiated with 50 keV Ni+ ions at an incident angle of 45° at a temperature of 373 K. In Ni3Al the defect yield, i.e. the probability for a disordered zone to contain a loop was found to be strongly dependent on the depth of the zone in the foil, varying from about 0.7 for near-surface zones to about 0.2 in the bulk. The sizes and shapes of disordered zones were only weakly dependent on depth, except for a small population of zones very near the surface which were strongly elongated parallel to the incident ion beam. In Cu3Au the surface had a smaller but still significant effect on the defect yield. The dependence of the tranverse disordered zone diameter d on ion energy E for Ta+ irradiation of NiA was found to follow a relationship d = k1, E1/α with k, = 2.4 ± 0.4 and α = 3.3 ± 0.4. A similar relationship with the same value of α is valid for a wide variety of incident ion/target combinations found in the literature.

Ion beam-mixing effects in nearly lattice-matched AlInN/GaN heterostructures by swift heavy ion irradiation

2012 ◽  
Vol 167 (7) ◽  
pp. 506-511 ◽  
Author(s):  
G. Devaraju ◽  
S. V.S. Nageswara Rao ◽  
N. Srinivasa Rao ◽  
V. Saikiran ◽  
T. K. Chan ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Heavy Ion ◽  
Ion Beam Mixing ◽  
Swift Heavy Ion Irradiation ◽  
Heavy Ion Irradiation ◽  
Mixing Effects ◽  
Swift Heavy Ion ◽  
Lattice Matched

Effect of Cascade Remnants on Freely Migrating Defects in Cu -1 % Au Alloys

1995 ◽  
Vol 396 ◽  
Author(s):  
A. Iwase ◽  
L. E. Rehn ◽  
P. M. Baldo ◽  
L. Funk
Keyword(s):  
Heavy Ions ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Heavy Ion ◽  
The Other ◽  
Inert Gas ◽  
Heavy Ion Irradiation ◽  
Simultaneous Irradiation ◽  
Radiation Induced ◽  
Cu Ions

AbstractThe effects of cascade remnants on Freely Migrating Defects (FMD) were studied by measuring Radiation-Induced Segregation (RIS) in Cu-l%Au at 400°C during simultaneous irradiation with 1.5-MeV He and (400-800)-keV heavy ions (Ne, Ar or Cu). The large RIS observed during 1.5-MeV He-only irradiation was dramatically suppressed under simultaneous heavy ion irradiation. For Cu simultaneous irradiation, the suppression disappeared immediately after the Cu irradiation ceased, while for simultaneous inert gas (Ne or Ar) irradiation, the suppression persisted after the ion beam was turned off. These results demonstrate that the displacement cascades created by heavy ions introduce additional annihilation sites, which reduce the steady-state FMD concentrations. As the cascade remnants produced by Cu ions are thermally unstable at 400°C, the RIS suppression occurs only during simultaneous irradiation. On the other hand, the inert gas atoms which accumulate in the specimen apparently stabilize the cascade remnants, allowing the suppression to persist.

Ion beam mixing of ZnO/SiO2 and Sb/Ni/Si interfaces under swift heavy ion irradiation

2002 ◽  
Vol 91 (3) ◽  
pp. 1129-1134 ◽  
Author(s):  
Saskia Kraft ◽  
Beate Schattat ◽  
Wolfgang Bolse ◽  
Siegfried Klaumünzer ◽  
Felix Harbsmeier ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Heavy Ion ◽  
Ion Beam Mixing ◽  
Swift Heavy Ion Irradiation ◽  
Heavy Ion Irradiation ◽  
Swift Heavy Ion

scholarly journals Heavy ion irradiation induced dislocation loops in AREVA’s M5® alloy

2012 ◽  
Vol 423 (1-3) ◽  
pp. 170-182 ◽  
Author(s):  
R.M. Hengstler-Eger ◽  
P. Baldo ◽  
L. Beck ◽  
J. Dorner ◽  
K. Ertl ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Heavy Ion ◽  
Dislocation Loops ◽  
Heavy Ion Irradiation ◽  
Induced Dislocation

Swift Heavy Ion Irradiation Induced Effects in Si/SiOx Multi-Layered Films and Nanostructures

2009 ◽  
Vol 1181 ◽  
Author(s):  
Jurgen W Gerlach ◽  
C. Patzig ◽  
W. Assmann ◽  
A. Bergmaier ◽  
Th. Höche ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Incidence Angle ◽  
Ion Beam ◽  
Heavy Ion ◽  
Ion Beam Sputtering ◽  
Elastic Recoil ◽  
Swift Heavy Ion Irradiation ◽  
Heavy Ion Irradiation ◽  
Swift Heavy Ion ◽  
Glancing Angle

AbstractAmorphous Si/SiOx multi-layered films and nanostructures were deposited on Si substrates by the glancing angle deposition technique using Ar ion beam sputtering of a Si sputter target in an intermittent oxygen atmosphere at room temperature. The chemical composition of the samples was characterized by time-of-flight secondary ion mass spectrometry, as well as - for quantifying these first results - by elastic recoil detection analysis using a 200 MeV Au ion beam. The latter method was found to lead to a significant alteration of the sample morphology, resulting in the formation of complex nanometric structures within the layer stacks. In order to investigate these swift heavy ion irradiation induced effects in more detail, a series of experiments was conducted to determine the dominating influences. For this purpose, specific glancing angle deposited multilayered films and nanostructures were irradiated to constant ion fluence with the same 200 MeV Au ion beam at different incidence angles. Scanning electron microscopy of the stacks before and after swift Au ion irradiation revealed considerable changes in film morphology and density as a function of the ion incidence angle, such as an increased porosity of the silicon layers, accompanied by a layer swelling. In contrast, the SiOx layers did not show such effects, but exhibited clearly visible swift heavy ion tracks. The observed effects became stronger with decreasing ion incidence angle.

scholarly journals Plant Mutation Breeding with Heavy Ion Irradiation at IMP

2016 ◽  
Vol 8 (5) ◽  
pp. 34 ◽  
Author(s):  
Xicun Dong ◽  
Xia Yan ◽  
Wenjian Li
Keyword(s):  
Ion Irradiation ◽  
Biological Effects ◽  
Ion Beam ◽  
National Laboratory ◽  
Heavy Ion ◽  
Mutation Breeding ◽  
High Yield ◽  
Early Maturity ◽  
Heavy Ion Irradiation ◽  
Heavy Ion Beam

<p>The Heavy Ion Research Facility in Lanzhou (HIRFL) is one of the ion-beam acceleration facilities intensively used at IMP, founded as national laboratory and opened for user in world from 1992. Since then, a lot of experiments irradiated by heavy ion beam have been carried out in the HIRFL, including plant mutation breeding. In this review, the biological effects induced by heavy ions and their corresponding mechanisms were reported from the point of view of cytological, morphological and molecular levels. To date, a large number of mutants were isolated using heavy ion irradiation IMP, such as early maturity, flower color and shape, high yield and disease resistant. In conclusion, heavy ion beam irradiation is an efficient mutagen and has significant phenotypic variations in plant. Our research will be further focused on transformation of scientific and technological achievements and mutagenic mechanism of heavy ion beam on high plant at the molecular level in the recent future.</p>

Mutagenesis, Screening and Industrialization of High Avermectin B1a Producing Strains from Streptomyces Avermitilis Irradiated by 12C 6+ Ion Beam

2011 ◽  
Vol 339 ◽  
pp. 652-655 ◽  
Author(s):  
Shu Yang Wang ◽  
Ji Hong Chen ◽  
Wen Jiang Li ◽  
Jian Ping Liang ◽  
Yong Heng Bo ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Heavy Ion ◽  
Streptomyces Avermitilis ◽  
Original Strain ◽  
Carbon Ions ◽  
Heavy Ion Irradiation ◽  
Fermentation Tank ◽  
Unique Method ◽  
High Let

Heavy ion irradiation induced mutation is a unique method of physical mutation, with various parameters, high LET and RBE characteristic. The spore suspension of streptomyces avermitilis were irradiated by carbon ions with doses of 0、30、40、50、60 and 70 Gy. The high avermectin producing strain was successfully obtained after the mutagenesis processing by heavy ion beam and the screening of orthomutation strains. Two strains(No.203 and No.148) which potency was 5200μg/ml was sieved and its potency increased 38.64% than the original strain. The obtained strains were used for 1 ton fermentation tank and the pilot 5-ton fermentation tank amplification tests.

SHI induced evolution of surface and wettability of BaF2 thin films

MRS Advances ◽  
2019 ◽  
Vol 4 (28-29) ◽  
pp. 1667-1672 ◽  
Author(s):  
Ratnesh K Pandey ◽  
Tanuj Kumar ◽  
Udai B Singh ◽  
Shikha Awasthi ◽  
Avinash C Pandey
Keyword(s):  
Thin Films ◽  
Contact Angle ◽  
Water Droplet ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Normal Incidence ◽  
Heavy Ion ◽  
Ion Beam Irradiation ◽  
Major Factors ◽  
Shi Irradiation

AbstractWe report evolution of the surface and wetting behavior of Barium fluoride (BaF2) thin films under the effect of swift heavy ion (SHI) irradiation at different fluences. The analogy of this study may be used may be used for the development of dust resistant fabric technology for rural area. The ion irradiation has been performed at normal incidence on the films with Au ions having 100 MeV energy. Further, the wettability of irradiated surfaces is studied through contact angle of water droplet. The value of contact angle of droplet changes with irradiation, it increases from 111° to 123° with the increase in fluence from 5×1011 to 1×1013 ions/cm2. The mechanism of wettability of BaF2 is explained on the basis of increase in contact area of water droplet with surface. SHI irradiation deposits a huge amount of energy in materials due to extreme electronic excitation and it causes a large increase in the temperature of material around the ion track. Ion beam irradiation leads to the large ejection of atoms from the surface which is one of the major factors in increasing the roughness of the surface and thus for the change in contact angle.

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