Response of Zircon to Electron and Ne+ Irradiation

1997 ◽  
Vol 481 ◽  
Author(s):  
R. Devanathan ◽  
W. J. Weber ◽  
L. A. Boatner
Keyword(s):  
Nuclear Waste ◽  
National Laboratory ◽  
Argonne National Laboratory ◽  
Voltage Electron ◽  
Waste Forms ◽  
High Voltage Electron Microscope ◽  
Ion Accelerator ◽  
Order Of Magnitude ◽  
Nuclear Waste Forms

ABSTRACTZircon (ZrSiO4) is an actinide host phase in vitreous ceramic nuclear waste forms and a potential host phase for the disposition of excess weapons plutonium. In the present work, the effects of 800 and 900 keV electron, and 1 MeV Ne+ irradiations on the structure of single crystals of ZrSiO4 have been investigated. The microstructural evolution during the irradiations was studied in situ using a high-voltage electron microscope interfaced to an ion accelerator at Argonne National Laboratory. The results indicate that electron irradiation at 15 K cannot amorphize ZrSiO4 even at fluences an order of magnitude higher than that required for amorphization by 1.5 MeV Kr + ions. However, the material is readily amorphized by I MeV Ne+ irradiation at 15 K. The temperature dependence of this amorphization is discussed in light of previous studies of radiation Zdamage in ZrSiO4.

In Situ Radiation Damage Studies of Ca3Zr2FeAlSiO12 and Ca3Hf2FeAlSiO12

2008 ◽  
Vol 1124 ◽  
Author(s):  
Karl R Whittle ◽  
Mark Blackford ◽  
Gregory R Lumpkin ◽  
Katherine L Smith ◽  
Nestor J Zaluzec
Keyword(s):  
Nuclear Waste ◽  
National Laboratory ◽  
Argonne National Laboratory ◽  
Voltage Electron ◽  
Significant Difference ◽  
User Facility ◽  
High Level Nuclear Waste ◽  
Nuclear Waste Immobilization ◽  
High Level

AbstractGarnets, A3B2C3O12, are considered to be potential host phases for the immobilization of high-level nuclear waste as they can accommodate a number of elements of interest, including Zr, Ti and Fe. The naturally occurring garnet, kimzeyite, Ca3(Zr,Ti)2(Si,Al,Fe)3O12, can contain ˜30wt% Zr. An understanding of the radiation tolerance of these materials is crucial to their potential use in nuclear waste immobilization. In this study two synthetic analogues of kimzeyite of composition Ca3Zr2FeAlSiO12 and Ca3Hf2FeAlSiO12 were monitored in situ during irradiation with 1.0 MeV Kr ions using the intermediate voltage electron microscope-Tandem User Facility (IVEM) at Argonne National Laboratory. The structure of these materials was previously determined by neutron diffraction and 57Fe Mössbauer spectroscopy. Ca3Zr2FeAlSiO12 and Ca3Hf2FeAlSiO12 have very similar structural properties with cubic Ia3d symmetry, the only significant difference being the presence of Zr and Hf, respectively, on the 6 coordinated B sites.

The Application of 57FE Mössbauer Spectroscopy to the Characterization of Nuclear Waste Forms

1981 ◽  
Vol 6 ◽  
Author(s):  
Paul G. Huray ◽  
M. T. Spaar ◽  
S. E. Nave ◽  
J. M. Legan ◽  
L. A. Boatner ◽  
...  
Keyword(s):  
Nuclear Waste ◽  
Chemical Properties ◽  
Electronic Charge ◽  
Chemical Information ◽  
Waste Forms ◽  
Charge States ◽  
Physical And Chemical ◽  
Nuclear Waste Forms

The electronic charge states and site symmetries of the radioactive ions incorporated in nuclear waste forms are of considerable importance in determining the physical and chemical properties of these materials. An in situ characterization of these ions is, unfortunately, often difficult – especially when a mixture of charge states and local crystal symmetries exist. The application of Mbssbauer spectroscopy represents a powerful technique for obtaining solid state chemical information.

scholarly journals In Situ TEM Observations of Heavy Ion Damage in Gallium Arsenide

1988 ◽  
Vol 100 ◽  
Author(s):  
M. W. Bench ◽  
I. M. Robertson ◽  
M. A. Kirk
Keyword(s):  
Low Temperature ◽  
Room Temperature ◽  
National Laboratory ◽  
Argonne National Laboratory ◽  
Heavy Ion ◽  
In Situ Tem ◽  
Accelerator Facility ◽  
Transmission Electron ◽  
Ion Accelerator

ABSTRACTTransmission electron microscopy experiments have been performed to investigate the lattice damage created by heavy-ion bombardments in GaAs. These experiments have been performed in situ by using the HVEN - Ion Accelerator Facility at Argonne National Laboratory. The ion bcorbardments (50 keV Ar+ and Kr+) and the microscopy have been carried out at temperatures rangrin from 30 to 300 K. Ion fluences ranged from 2 × 1011 to 5 × 1013 ions cm−2.Direct-inpact amorphization is observed to occur in both n-type and semi-insulating GaAs irradiated to low ion doses at 30 K and room temperature. The probability of forming a visible defect is higher for low temperature irradiations than for room temperature irradiations. The amorphous zones formed at low temperature are stable to temperatures above 250 K. Post implantation annealing is seen to occur at room temperature for all samples irradiated to low doses until eventually all visible damage disappears.

scholarly journals Facile incorporation of technetium into magnetite, magnesioferrite, and hematite by formation of ferrous nitrate in situ: precursors to iron oxide nuclear waste forms

2018 ◽  
Vol 47 (30) ◽  
pp. 10229-10239 ◽  
Author(s):  
Wayne W. Lukens ◽  
Sarah A. Saslow
Keyword(s):  
Iron Oxide ◽  
Fission Product ◽  
Nuclear Waste ◽  
Half Life ◽  
Fission Yield ◽  
Waste Forms ◽  
Nuclear Waste Forms

The fission product, 99Tc, presents significant challenges to the long-term disposal of nuclear waste due to its long half-life, high fission yield, and to the environmental mobility of pertechnetate (TcO4−), the stable Tc species in aerobic environments.

The formation and recrystallization of amorphous zones produced in GaAS by ion irradiation

1988 ◽  
Vol 46 ◽  
pp. 460-461
Author(s):  
M. W. Bench ◽  
I. M. Robertson ◽  
M. A. Kirk
Keyword(s):  
Ion Irradiation ◽  
National Laboratory ◽  
Argonne National Laboratory ◽  
Heavy Ion ◽  
Accelerator Facility ◽  
Voltage Electron ◽  
Transmission Electron ◽  
Ion Accelerator ◽  
Lattice Damage ◽  
Insight Into

Transmission electron microscopy experiments have been performed to investigate the lattice damage created by heavy-ion bombardments in GaAs. These experiments were undertaken to provide additional insight into the mechanisms by which individual amorphous zones and eventually amorphous layers are created. To understand these mechanisms, the structure of the defects created as a function of material, irradiating ion, dose, dose rate, and implantation tenperature have been studied using TEM. Also, the recovery of the crystalline structure by annealing has been investigated.These experiments were performed at the High-Voltage Electron Microscope - Ion Accelerator Facility at Argonne National Laboratory. This facility consists of an HVEM which has been interfaced with two ion accelerators. This coupling, plus the availability of several specimen stages permits ion irradiations to be performed in the specimen chamber of the microscope at controlled temperatures from 10 to 1000 K.

Ion Beam Irradiation of Lanthanum Compounds in the Series La2O3-TiO2

2010 ◽  
Vol 1265 ◽  
Author(s):  
Karl Whittle ◽  
Mark Blackford ◽  
Robert Aughterson ◽  
Katherine L Smith ◽  
Gregory R Lumpkin ◽  
...  
Keyword(s):  
Ion Beam ◽  
National Laboratory ◽  
Argonne National Laboratory ◽  
Inverse Correlation ◽  
Critical Temperatures ◽  
Voltage Electron ◽  
Local Environments ◽  
Two Systems ◽  
User Facility

AbstractThin crystals of La2O3, La2/3TiO3, La2TiO5, and La2Ti2O7 have been irradiated in situ using 1 MeV Kr2+ ions in the Intermediate Voltage Electron Microscope-Tandem User Facility (IVEM-Tandem), at the Argonne National Laboratory (ANL). We observed that La2O3 remained crystalline to a fluence greater than 3.1 × 1016 ions cm-2 at a temperature of 50 K. The four binary oxide compounds in the two systems were observed through the crystalline-amorphous transition as a function of ion fluence and temperature. Results from the ion irradiations give critical temperatures for amorphisation (Tc) of 840 K for La2Ti2O7, 865 K for La2/3TiO3, and 1027 K for La2TiO5. The Tc values observed in this study, together with previous data for TiO2, are discussed with reference to the phase diagrams for La2O3-TiO2 systems and the different local environments within the crystal structures. Results suggest an observable inverse correlation between Tc and melting temperature (Tm) in the two systems.

Effects of krypton ion irradiation on the structure and morphology of germanium — An in situ TEM study

1990 ◽  
Vol 48 (4) ◽  
pp. 536-537
Author(s):  
L.M. Wang ◽  
R.C. Birtcher
Keyword(s):  
Ion Irradiation ◽  
Morphological Changes ◽  
Amorphous Material ◽  
National Laboratory ◽  
Argonne National Laboratory ◽  
In Situ Tem ◽  
Tandem Accelerator ◽  
Accelerator Facility ◽  
Voltage Electron

Although it was initially thought that irradiation could not further damage an amorphous material, an anomalous ion-induced morphological instability on the surface of amorphous Ge has been reported previously by several authors. In this study, the structural and morphological changes of Ge were monitored during 1.5 MeV Kr ion irradiation by in situ TEM to obtain insight into the damage evolution in ion-irradiated Ge.The in situ study was performed on the HVEM-Tandem Accelerator Facility at Argonne National Laboratory. The facility consists of a modified Kratos/AEI EM7 high voltage electron microscope (HVEM) and a 2 MV tandem ion accelerator. The samples were jet-polished polycrystalline Ge (99.99999 at. % pure) TEM discs with grain size > 5 μm in dimension. The Kr ion irradiation was carried out at room temperature, and the electron energy of the HVEM was 300 kV. According to a TRIM computer simulation, over 99% of the Kr ions penetrate through the electron transparent areas of the Ge sample, and a dose of 1×1015 Kr/cm2 created an average of ∽4 displacements per atom and an average Kr concentration of ∽12 appm in the observation region of the sample.

In-situ electrical-resistivity measurements in the high-voltage electron microscope

1978 ◽  
Vol 36 (1) ◽  
pp. 68-69
Author(s):  
W. E. King
Keyword(s):  
Electrical Resistivity ◽  
Electron Microscope ◽  
High Voltage ◽  
Resistivity Measurements ◽  
Voltage Electron ◽  
High Voltage Electron Microscope ◽  
High Voltage Electron ◽  
Wide Range ◽  
Helium Gas

A side-entry type, helium-temperature specimen stage that has the capability of in-situ electrical-resistivity measurements has been designed and developed for use in the AEI-EM7 1200-kV electron microscope at Argonne National Laboratory. The electrical-resistivity measurements complement the high-voltage electron microscope (HVEM) to yield a unique opportunity to investigate defect production in metals by electron irradiation over a wide range of defect concentrations.A flow cryostat that uses helium gas as a coolant is employed to attain and maintain any specified temperature between 10 and 300 K. The helium gas coolant eliminates the vibrations that arise from boiling liquid helium and the temperature instabilities due to alternating heat-transfer mechanisms in the two-phase temperature regime (4.215 K). Figure 1 shows a schematic view of the liquid/gaseous helium transfer system. A liquid-gas mixture can be used for fast cooldown. The cold tip of the transfer tube is inserted coincident with the tilt axis of the specimen stage, and the end of the coolant flow tube is positioned without contact within the heat exchanger of the copper specimen block (Fig. 2).

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