Nitridation Of Sapphire Substrate Using Remote Plasma Enhanced-Ultrahigh Vacuum Chemical Vapor Deposition At Low Temperature

1997 ◽  
Vol 482 ◽  
Author(s):  
Jong-Sik Paek ◽  
Kyoung-Kook Kim ◽  
Ji-Myon Lee ◽  
Dong-Jun Kim ◽  
Hyo-Gun Kim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Sapphire Substrate ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Rf Power ◽  
Remote Plasma ◽  
Sapphire Surface ◽  
Nitridation Process

AbstractA remote plasma enhanced-ultrahigh vacuum chemical vapor deposition (RPE-UHVCVD) system equipped with a radio frequency-inductively coupled plasma (RF-ICP) which produces the reactive nitrogen species was employed to study the nitridation process at low temperature. The sapphire surface nitridated under various conditions was investigated with x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The nitridation process seems to be mostly affected by the RF power even at low temperature since the intensity of the N1s, peak was not dependent on the substrate temperature but on the RF power. The AFM images showed that the protrusion density on the sapphire surface decreased rapidly when the nitridation temperature was decreased. This result suggests that the formation of the protrusions is closely related to the process temperature, indicating that the formation of such protrusions is caused by the change of an elastic strain energy due to the thermal stress. It was possible to nitridate the sapphire surface without protrusion at a very low temperature. The crystallinity of GaN grown at 450 °C was found to be much improved when the sapphire substrate was nitridated at low temperature prior to the GaN layer growth.

The Effect Of The Nucleation Layer On The Low Temperature Growth Of Gan Using A Remote Plasma Enhanced – Ultrahigh Vacuum Chemical Vapor Deposition (RPE-UHVCVD)

1997 ◽  
Vol 482 ◽  
Author(s):  
Kyoung-Kook Kim ◽  
Dong-Jun Kim ◽  
Jong-Sik Paek ◽  
Je-Hee Jo ◽  
Hyo-Gun Kim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Remote Plasma ◽  
Nucleation Layer ◽  
Temperature Growth ◽  
Low Temperature Growth

AbstractThis study investigated the low temperature growth of GaN on a nucleation layer in a remote plasma enhanced-ultrahigh vacuum chemical vapor deposition (RPE-UHVCVD) system which is equipped with an rf plasma cell for a nitrogen source. It was found that the growth temperature and the film thickness of the nucleation layer and the nitrogen flow rate for GaN growth play important roles in the improvement of crystallinity of the GaN layer. The nitridation of sapphire was also found to enhance the formation of facet shaped nuclei on the nucleation layer. As the temperature of the nucleation layer increased, islands with hexagonal and other facet shapes were formed on the grown GaN surface. This facet formation was related with the surface morphology and crystallinity of GaN. The best crystallinity was measured in a GaN layer with hexagonal facets on the surface and such GaN layers could be grown on a nucleation layer grown at 375 °C. Nitridation of sapphire and the growth temperature of the nucleation layer were also found to change the island shapes which enhances the formation of columnar structures in the GaN layer, resulting in the growth of a high crystalline GaN layer at low temperature.

Low-Temperature Epitaxial Growth of Silicon and Silicon-Germanium Alloy by Ultrahigh-Vacuum Chemical Vapor Deposition

1994 ◽  
Vol 33 (Part 1, No.1A) ◽  
pp. 240-246 ◽  
Author(s):  
Tz-Guei Jung ◽  
Chun-Yen Chang ◽  
Ting-Chang Chang ◽  
Horng-Chih Lin ◽  
Tom Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Silicon Germanium ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Germanium Alloy

Low-temperature Si in-situ cleaning and homoepitaxy by remote plasma-enhanced chemical vapor deposition

1990 ◽  
Author(s):  
Ting-Chen Hsu ◽  
Brian G. Anthony ◽  
Louis H. Breaux ◽  
Rong Z. Qian ◽  
Sanjay K. Banerjee ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Remote Plasma

Remote Plasma-Enhanced Chemical Vapor Deposition of Epitaxial Silicon on Silicon (100) at 150°C

1989 ◽  
Vol 165 ◽  
Author(s):  
T. Hsu ◽  
B. Anthony ◽  
L. Breaux ◽  
S. Banerjee ◽  
A. Tasch
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Hydrogen Plasma ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Epitaxial Silicon ◽  
Remote Plasma ◽  
Silicon Epitaxy

AbstractLow temperature processing will be an essential requirement for the device sizes, structures, and materials being considered for future integrated circuit applications. In particular, low temperature silicon epitaxy will be required for new devices and technologies utilizing three-dimensional epitaxial structures and silicon-based heterostructures. A novel technique, Remote Plasma-enhanced Chemical Vapor Deposition (RPCVD), has achieved epitaxial silicon films at a temperature as low as 150°C which is believed to be the lowest temperature to date for silicon epitaxy. The process relies on a stringent ex-situ preparation procedure, a controlled wafer loading sequence, and an in-situ remote hydrogen plasma clean of the sample surface, all of which provide a surface free of carbon, oxygen, and other contaminants. The system is constructed using ultra-high vacuum technology (10-10 Torr) to achieve and maintain contaminantion-free surfaces and films. Plasma excitation of argon is used in lieu of thermal energy to provide energetic species that dissociate silane and affect surface chemical processes. Excellent crystallinity is observed from the thin films grown at 150°C using the analytical techniques of Transmission Electron Microscopy (TEM) and Nomarski interference contrast microscopy after defect etching.

Low Temperature GaN Growth on Nitridated Sapphire Using Remote Plasma Enhanced Ultrahigh Vacuum Chemical Vapor Deposition

1997 ◽  
Vol 482 ◽  
Author(s):  
Dong-Jun Kim ◽  
Kyoung-Kook Kim ◽  
Jong-Sik Paek ◽  
Min-Su Yi ◽  
Do-Young Noh ◽  
...  
Keyword(s):  
Absorption Spectrum ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Rocking Curve ◽  
X Ray ◽  
Nitridation Time ◽  
Nir Absorption

AbstractGaN epitaxial thin films were grown on a nitridated sapphire at low temperature (550°C) using remote plasma enhanced ultrahigh vacuum chemical vapor deposition system and these films were investigated by Rutherford backscattering spectroscopy (RBS), X-ray diffraction(XRD) θ-rocking technique and the Ultraviolet-Visible-Nearinfrared (UV-VIS-NIR) absorption spectrum. The FWHM of the X-ray θ-rocking curve was about 0.4 degree using the (0002) reflection from the GaN layer with 5000Å thickness grown on the nitridated sapphire. An analysis of XRD and the UV-VIS-NIR absorption spectrum showed that the crystalline and optical qualities of GaN are dependent on the nitridation time of the sapphire even at low temperature when a plasma source is used for nitridation. This means that the density of protrusion, which is formed by a relaxation of the elastic energy caused by the lattice difference between the sapphire and AlxO1-xN, with the sapphire nitridation time plays a key role in the crystalline and optical properties of grown GaN films. The RBS channeling data and the FWHM value of the θ-rocking curve for GaNr(0002) also indicated that the truncated hexagonals are tilted towards each other. These results showed that the GaN epitaxial film can be successfully grown on nitridated sapphire by RPE-UHVCVD even at low temperature.

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