Relaxed Inx.Ga1−xas Graded Buffers Grown With Organometallic Vapor Phase Epitaxy on GaAs

1997 ◽  
Vol 484 ◽  
Author(s):  
M. T. Bulsara ◽  
C. Leitz ◽  
E. A. Fitzgerald
Keyword(s):  
Surface Roughness ◽  
Phase Separation ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Threading Dislocation ◽  
Misfit Dislocations ◽  
Organometallic Vapor Phase Epitaxy ◽  
Cross Sectional ◽  
Plan View ◽  
Optimum Growth Temperature

AbstractInxGa1−xAs structures with compositionally graded buffers were grown with organometallic vapor phase epitaxy (OMVPE) on GaAs substrates and characterized with plan-view and cross-sectional transmission electron microscopy (PV-TEM and X-TEM), atomic force microscopy (AFM), and x-ray diffraction (XRD). The results show that surface roughness experiences a maximum at growth temperatures where phase separation occurs in In.Gal.,As. The strain fields from misfit dislocations induce this phase separation in the <110> directions. At growth temperatures above and below this temperature, the surface roughness decreases significantly; however, only growth temperatures above this regime ensure nearly complete relaxed graded buffers with the most uniform composition caps. With the optimum growth temperature for grading InxGa1−x,As determined to be 700 °C, it was possible to produce In0.33Ga0.67As diodes on GaAs with threading dislocation densities < 8.5 × 106/cm2.

High Quality in.Ga1−xas Heterostructures Grown on GaAs With Movpe

1998 ◽  
Vol 510 ◽  
Author(s):  
M.T. Bulsara ◽  
E.A. Fitzgerald
Keyword(s):  
Surface Roughness ◽  
Phase Separation ◽  
Threading Dislocation ◽  
Misfit Dislocations ◽  
Cross Sectional ◽  
Plan View ◽  
Force Microscopy ◽  
Optimum Growth Temperature ◽  
Transmission Electron ◽  
Metal Organic

AbstractInxGa1−xAs structures with compositionally graded buffers were grown by metal-organic vapor phase epitaxy (MOVPE) on GaAs substrates and characterized with plan-view and cross-sectional transmission electron microscopy (PV-TEM and X-TEM), atomic force microscopy (AFM), and x-ray diffraction (XRD). The results show that surface roughness experiences a maximum at growth temperatures where phase separation occurs in InxGa1−xAs. The strain energy due misfit dislocations in the graded buffer indirectly influences phase separation. At growth temperatures above and below this temperature, the surface roughness is decreased significantly; however, only growth temperatures above this regime ensure nearly complete relaxed graded buffers with the most uniform composition caps. With the optimum growth temperature for grading InxGa1−xAs determined to be 700°C, it was possible to produce In0.33Ga0.67As diode structures on GaAs with threading dislocation densities < 8.5 × 106/cm2

Nucleation and evolution of misfit dislocations in ZnSe/GaAs (001) heterostructures grown by low‐pressure organometallic vapor phase epitaxy

1996 ◽  
Vol 68 (3) ◽  
pp. 346-348 ◽  
Author(s):  
Sergei Ruvimov ◽  
Edith D. Bourret ◽  
Jack Washburn ◽  
Zuzanna Liliental‐Weber
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Vapor Phase Epitaxy ◽  
Misfit Dislocations ◽  
Organometallic Vapor Phase Epitaxy

Diluent Gas Effects on Properties of Ain and GaN Thin Films Grown by Metalorganic Vapor Phase Epitaxy on α(6H)-SiC Substrates

1997 ◽  
Vol 482 ◽  
Author(s):  
Andrew Hanser ◽  
Colin Wolden ◽  
William Perry ◽  
Tsvetanka Zheleva ◽  
Eric Carlson ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Phase ◽  
Secondary Ion Mass Spectrometry ◽  
Film Growth ◽  
Fluid Dynamic ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Cross Sectional ◽  
Plan View ◽  
Mg Doped

AbstractThin films of AIN and GaN were deposited on α(6H)-SiC(0001) wafers using metalorganic vapor phase epitaxy (MOVPE) and H2 and N2 diluents. A computational fluid dynamic model of the deposition process was used to analyze the film growth conditions for both diluents. Low temperature (12 K) photoluminescence of the GaN films grown in N2 had peak intensities and full widths at half maximum of ∼7 meV which were equal to or better than those films grown in H2. Cross-sectional and plan-view transmission electron microscopy of films grown in both diluents showed similar microstructures with a typical dislocation density of 109/cm2. Hall measurements of n-type (Si doped) GaN grown in N2 revealed Hall mobilities equivalent to those films grown in H2. Acceptor-type behavior of Mg-doped GaN grown in N2 was repeatably obtained without post-growth annealing. Secondary ion mass spectrometry revealed equivalent levels of H in Mg-doped GaN films grown in both diluents.

Characterization of Hazy Morphology on AlInP/GaAs Epitaxial Wafers Grown by Organometallic Vapor-Phase Epitaxy

2021 ◽  
Author(s):  
Hongyu Peng ◽  
Tuerxun Ailihumaer ◽  
Yafei Liu ◽  
Kim Kisslinger ◽  
Xiao Tong ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy
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