Radiation Damage in Si Avalanche Photodiodes by 1-Mev Fast Neutrons and 220-Mev Carbon Particles

1997 ◽  
Vol 487 ◽  
Author(s):  
H. Ohyama ◽  
T. Hakata ◽  
E. Simoen ◽  
C. Claeys ◽  
Y. Takami ◽  
...  
Keyword(s):  
Radiation Damage ◽  
Dark Current ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Avalanche Photodiodes ◽  
Fast Neutrons ◽  
Device Performance ◽  
Carbon Particles ◽  
Transient Spectroscopy ◽  
Photo Current

AbstractResults are presented of a study on the degradation of the electrical and optical performance of n+p Si avalanche photodiodes, subjected to 1-MeV fast neutrons and to a 220-MeV carbon irradiation. The dark current increases after irradiation, while the photo current decreases. Two dominant hole capture levels, which are responsible for the degradation of performance, are after irradiation observed by DLTS (Deep Level Transient Spectroscopy). The degradation caused by neutron irradiation is smaller than that for carbon irradiation. The differences in the radiation damage are explained by the differences in the number of knock-on atoms and the nonionizing energy loss (NIEL). The recovery behavior of the device performance by isochronal annealing is also reported.

In Situ Deep-Level Transient Spectroscopy and Dark Current Measurements of Proton-Irradiated InGaAs Photodiodes

2020 ◽  
Vol 67 (9) ◽  
pp. 2051-2061
Author(s):  
George T. Nelson ◽  
Gildas Ouin ◽  
Stephen J. Polly ◽  
Kevin B. Wynne ◽  
Arthur W. Haberl ◽  
...  
Keyword(s):  
Dark Current ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Transient Spectroscopy

Radiation Damage Of InGaAs Photodiodes By High Energy Particles

1997 ◽  
Vol 487 ◽  
Author(s):  
T. Kudou ◽  
H. Ohyama ◽  
E. Simoen ◽  
C. Claeys ◽  
Y. Takami ◽  
...  
Keyword(s):  
Energy Loss ◽  
Dark Current ◽  
High Energy ◽  
Fast Neutrons ◽  
Carbon Particles ◽  
Recovery Behavior ◽  
The One ◽  
High Energy Particles ◽  
Calculated Number ◽  
Photo Current

AbstractResults are presented of a study on the performance degradation and the induced lattice defects of In0.53Ga0.47As p-i-n photodiodes, subjected to 220-MeV carbon particles. The effects on both the dark current and the photo-current are investigated as a function of the carbon fluence and correlated with DLTS results. The device degradation is compared with the one observed after exposure to 1-MeV electrons, 1-MeV fast neutrons and 20-MeV alpha rays, respectively. The differences in damage coefficients will be explained in view of the calculated number of knock-on atoms and the nonionizing energy loss (NIEL). The recovery behavior of the diode performance and of the induced deep levels by isochronal annealing is also reported.

Characterization and Simulation of Neutron Irradiated JBS Silicon Carbide Diode Structures

2014 ◽  
Vol 605 ◽  
pp. 151-154
Author(s):  
Stanislav Popelka ◽  
Pavel Hazdra ◽  
Vít Záhlava
Keyword(s):  
Radiation Damage ◽  
Nuclear Reactor ◽  
Deep Level ◽  
Free Charge Carrier ◽  
Deep Levels ◽  
Fast Neutrons ◽  
Precise Analysis ◽  
Transient Spectroscopy ◽  
State Resistance ◽  
Low Irradiation

The effect of radiation damage produced by fast neutrons on characteristics of JBS diodes produced on 4HSiC epilayers was investigated. 1200V JBS diodes from Cree were irradiated in nuclear reactor by fast neutrons with fluences ranging from 1.3x1013to 4x1014cm-2(1MeV NIEL equivalent in Si). Evolution of radiation damage was studied by deep level transient spectroscopy. New characterization method based on dynamic measurement of current to voltage characteristics in the kV range then allowed precise analysis of blocking characteristics and observation of free charge carrier removal with increasing neutron fluence. Results show that irradiation with fast neutrons introduces different point defect giving rise to acceptor like deep levels in SiC bandgap. These levels have a negligible effect on dynamic and blocking characteristics of irradiated JBS diodes, however, acceptor character of introduced deep levels accompanied by deactivation of donor dopants deteriorates diodes ON-state resistance already at low irradiation fluences. This degradation is then manifested by increasing values of the series resistance and the emission coefficient in the SPICE model of the JBS diode.

Persistent Photoconductivity And Thermal Recovery Kinetics Of Low Energy Ar + Bombarded GaAs

1991 ◽  
Vol 223 ◽  
Author(s):  
A. Vaseashta ◽  
L. C. Burton
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Thermal Recovery ◽  
Low Energy ◽  
Persistent Photoconductivity ◽  
Transport Parameters ◽  
Excellent Correlation ◽  
Proposed Model ◽  
Transient Spectroscopy ◽  
Kinetics Of

ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Rate and transport equations for these processes were derived and simulated employing transport parameters, trap locations and densities determined by deep level transient spectroscopy. Excellent correlation was obtained between the results of preliminary simulation and the experimentally observed values. The exponential decay of persistent photoconductivity response curve was determined to be due to metastable electron traps with longer lifetime and is consistent with an earlier proposed model.

Deep level study in epitaxial 4H-SiC grown on substrates inclined toward

2002 ◽  
Vol 719 ◽  
Author(s):  
Masashi Kato ◽  
Masaya Ichimura ◽  
Eisuke Arai ◽  
Shigehiro Nishino
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Activation Energies ◽  
Thickness Dependence ◽  
Epitaxial Layers ◽  
Transient Spectroscopy

AbstractEpitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

Two-Dimensional Local Deep-Level Transient Spectroscopy Imaging Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy

2016 ◽  
Author(s):  
N. Chinone ◽  
Y. Cho ◽  
R. Kosugi ◽  
Y. Tanaka ◽  
S. Harada ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Higher Order ◽  
Trap Density ◽  
New Technique ◽  
Two Dimensional ◽  
Nonlinear Dielectric ◽  
Annealing Conditions ◽  
Transient Spectroscopy ◽  
A New Technique

Abstract A new technique for local deep level transient spectroscopy (DLTS) imaging using super-higher-order scanning nonlinear dielectric microscopy is proposed. Using this technique. SiCVSiC structure samples with different post oxidation annealing conditions were measured. We observed that the local DLTS signal decreases with post oxidation annealing (POA), which agrees with the well-known phenomena that POA reduces trap density. Furthermore, obtained local DLTS images had dark and bright areas, which is considered to show the trap distribution at/near SiCVSiC interface.

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