Stoichiometry and Structure of Polar Group-III Nitride Semiconductor Surfaces

1997 ◽  
Vol 492 ◽  
Author(s):  
J. Fritsch ◽  
O. F. Sankey ◽  
K. E. Schmidt ◽  
J. B. Page

ABSTRACTWe use a local-orbital formalism based on density-functional theory to investigate the stoichiometry and structure of the cation- and anion-terminated (0001) surfaces of wurtzite-phase GaN and A1N. We compare the total energies computed for various p(2×2) reconstructions. First-layer atom deficient structures such as vacancies are found to be the most stable configurations for the anion- and cation-terminated surfaces. For metal rich growth conditions our calculations favor the adsorption of metal atoms. Surface chemical reactions relevant for the growth of thin nitride films, such as the adsorption of hydrogen and nitrogen from decomposed ammonia, are discussed. We determine the total energy differences for the co-adsorption of NH2 and H on different surface structures.

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Maciej J. Winiarski ◽  
Dorota A. Kowalska

Abstract The ground state phases of ternary alloys of rare earth and group III nitride semiconductors have been investigated within the density functional theory. The most energetically favorable crystal phases among possible cubic and hexagonal structures, i.e., the rock salt, zinc blende, wurtzite, and hexagonal BN, were determined. The type of a unit cell and the lattice parameters of the materials are presented as a function of their composition. Furthermore, effects of strain on ground states of group III and rare earth nitride materials are discussed. The findings presented in this work discloses the wurtzite type materials as being stable with relatively low contents of rare earth elements. It is expected that the wurtzite phase will be very persistent only in the La-based systems. Nevertheless, the two-dimensional hexagonal atomic layers are revealed as being a metastable phase for all alloys studied. This finding supports the conclusion of previous experimental reports for Sc-doped GaN systems that the presence of rare earth ions in group III nitride materials leads to flattening of the wurtzite type layers.


2013 ◽  
Vol 205-206 ◽  
pp. 417-421
Author(s):  
Tatsunori Yamato ◽  
Koji Sueoka ◽  
Takahiro Maeta

The lowest energetic configurations of metal impurities in 4throw (Sc - Zn), 5throw (Y - Cd) and 6throw (Hf - Hg) elements in Ge crystals were determined with density functional theory calculations. It was found that the substitutional site is the lowest energetic configuration for most of the calculated metals in Ge. The most stable configurations of dopant (Ga, Sb) - metal complexes in Ge crystals were also investigated. Following results were obtained. (1) For Ga dopant, 1st neighbor T-site is the most stable for metals in group 3 to 7 elements while substitutional site next to Ga atom is the most stable for metals in group 8 to 12 elements. (2) For Sb dopant, substitutional site next to Sb atom is the most stable for all calculated metals. Binding energies of the interstitial metalMiwith the substitutional dopantDswere obtained by the calculated total energies. The calculated results for Ge were compared with those for Si.


2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
G. A. Nemnes

Spin transport properties of magnetic nanowire systems—atomic-sized AlN nanowires with additional Mn impurities—are investigated employingab initioconstrained spin density functional theory calculations and nonequilibrium Green’s functions formalism. The analyzed nanowire structures exhibit a stress-induced phase transition, between würtzite and graphite-like configurations. In these quasi-one dimensional systems, the surface states ensure the basic prerequisite in establishing spin and charge transfer, by reducing the relatively large bandgap of the group III nitride semiconductor. The results show in how far this phase transition affects the surface states, focusing on the consequences which appear in the spin-filtering processes.


2020 ◽  
Vol 22 (16) ◽  
pp. 9148-9156 ◽  
Author(s):  
Weiwei Ju ◽  
Donghui Wang ◽  
Tongwei Li ◽  
Yi Zhang ◽  
Zijian Gao ◽  
...  

The Rashba spin splitting of polar group III–VI chalcogenides XABY (A, B = Ga, In; X ≠ Y = S, Se, Te) monolayer is investigated based on the density functional theory.


Symmetry ◽  
2021 ◽  
Vol 13 (7) ◽  
pp. 1281
Author(s):  
Zikri Altun ◽  
Erdi Ata Bleda ◽  
Carl Trindle

An atom trapped in a crystal vacancy, a metal cage, or a fullerene might have many immediate neighbors. Then, the familiar concept of valency or even coordination number seems inadequate to describe the environment of that atom. This difficulty in terminology is illustrated here by four systems: H atoms in tetragonal-pyramidal rhodium cages, H atom in an octahedral cobalt cage, H atom in a MgO octahedral hole, and metal atoms in C20 fullerenes. Density functional theory defines structure and energetics for the systems. Interactions of the atom with its container are characterized by the quantum theory of atoms in molecules (QTAIM) and the theory of non-covalent interactions (NCI). We establish that H atoms in H2Rh13(CO)243− trianion cannot be considered pentavalent, H atom in HCo6(CO)151− anion cannot be considered hexavalent, and H atom in MgO cannot be considered hexavalent. Instead, one should consider the H atom to be set in an environmental field defined by its 5, 6, and 6 neighbors; with interactions described by QTAIM. This point is further illustrated by the electronic structures and QTAIM parameters of M@C20, M=Ca to Zn. The analysis describes the systematic deformation and restoration of the symmetric fullerene in that series.


Nanoscale ◽  
2020 ◽  
Author(s):  
Shashikant Kumar ◽  
David Codony ◽  
Irene Arias ◽  
Phanish Suryanarayana

We study the flexoelectric effect in fifty-four select atomic monolayers using ab initio Density Functional Theory (DFT). Specifically, considering representative materials from each of Group III monochalcogenides, transition metal dichalcogenides...


2010 ◽  
Vol 21 (12) ◽  
pp. 1469-1477 ◽  
Author(s):  
M. SAMAH ◽  
B. BOUGHIDEN

Structures, binding energies, magnetic and electronic properties endohedrally doped C 20 fullerenes by metallic atoms ( Fe , Co , Ti and V ) have been obtained by pseudopotential density functional theory. All M @ C 20, except Co @ C 20, are more stable than the undoped C 20 cage. The magnetic moment values are 1 and 2μB. These values and semiconductor behavior give to these compounds interesting feature in several technological applications. Titanium doped C 20 has a same magnetic moment than the isolated Ti atom. Hybridization process in the Co doped C 20 fullerene is most strong than in other doped cages. Electrical and magnetic dipoles calculated in the iron doped C 20 are very strong compared with other clusters.


Author(s):  
N. K. Das ◽  
K. Rigby ◽  
N. H. de Leeuw

Density functional theory calculations have been used to study the incorporation of helium in perfect and defect-containing palladium tritides, where we have calculated the energetics of incorporation and the migration behaviour. Helium atoms preferably occupy the octahedral interstitial and substitutional sites in the perfect and Pd vacancy-containing tritides, respectively. The energetics reveal that helium clusters can form in the lattice, which displace the Pd metal atoms. The defective lattice shows less expansion compared with the perfect lattice, which can accommodate the helium less easily. The path from octahedral–tetrahedral–octahedral sites is the lowest energy pathway for helium diffusion, and the energetics indicate that the helium generated from tritium decay can accumulate in or near the octahedral sites. Density of states analyses shows the hybridization between palladium d and tritium s orbitals and repulsion between palladium d and helium s orbitals, which can distort the lattice as a result of generating localized stress.


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