Structural Properties of Polycrystalline Silicon Films Formed by Pulsed Rapid Thermal Processing

1998 ◽  
Vol 507 ◽  
Author(s):  
Yongqian Wang ◽  
Xianbo Liao ◽  
Hongwei Diao ◽  
Jie He ◽  
Zhixun Ma ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Thermal Processing ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Low Cost ◽  
Rapid Thermal Processing ◽  
Silicon Films ◽  
Large Area ◽  
Small Lattice ◽  
Polycrystalline Silicon Films

ABSTRACTA novel pulsed rapid thermal processing (PRTP) method has been used for realizing the solid-phase crystallization of amorphous silicon films prepared by PECVD. The microstructure and surface morphology of the crystallized films are investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). The results indicate that this PRTP is a suitable postcrystallization technique for fabricating large-area polycrystalline silicon films with good structural qualities such as large grain size, small lattice microstain and smooth surface morphology on low-cost substrate.

Structural properties of polycrystalline silicon films formed by pulsed rapid thermal processing

2002 ◽  
Vol 11 (5) ◽  
pp. 492-495 ◽  
Author(s):  
Wang Yong-Qian ◽  
Liao Xian-Bo ◽  
Diao Hong-Wei, Zhang Shi-Bin ◽  
Xu Yan-Yue ◽  
Chen Chang-Yong, Chen Wei-De ◽  
...  
Keyword(s):  
Structural Properties ◽  
Thermal Processing ◽  
Polycrystalline Silicon ◽  
Rapid Thermal Processing ◽  
Silicon Films ◽  
Polycrystalline Silicon Films

Bubbly Silicon: A New Mechanism for Solid Phase Crystallization of Amorphous Silicon

2009 ◽  
Author(s):  
Curtis Anderson ◽  
Lin Cui ◽  
Uwe Kortshagen
Keyword(s):  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Silicon Nanocrystals ◽  
Solid Phase ◽  
Amorphous Film ◽  
Silicon Films ◽  
Amorphous Films ◽  
Solid Phase Crystallization ◽  
Rapid Formation ◽  
Polycrystalline Silicon Films

This paper describes the rapid formation of polycrystalline silicon films through seeding with silicon nanocrystals. The incorporation of seed crystals into amorphous silicon films helps to eliminate the crystallization incubation time observed in non-seeded amorphous silicon films. Furthermore, the formation of several tens of nanometer in diameter voids is observed when cubic silicon nanocrystals with around 30 nm in size are embedded in the amorphous films. These voids move through the amorphous film with high velocity, pulling behind them a crystallized “tail.” This mechanism leads to rapid formation of polycrystalline films.

Properties of Gallium Implanted Furnace and Rapidly Annealed Polycrystalline Silicon

1987 ◽  
Vol 92 ◽  
Author(s):  
H.B. Harrison ◽  
A.P. Pogany ◽  
Y. Komem
Keyword(s):  
Electrical Conductivity ◽  
Phase Transformation ◽  
Liquid Phase ◽  
Long Range ◽  
Thermal Processing ◽  
Polycrystalline Silicon ◽  
Rapid Thermal Processing ◽  
Significant Movement ◽  
Lower Temperature ◽  
Polycrystalline Silicon Films

ABSTRACTPolycrystalline silicon films have been amorphized by implantation with 100keV Ga ions of doses 0.3 and 6×1015cm−2. These films were subsequently recrystallized using either a furnace for longer times lower temperature (∼30 mins, 600° C) or rapid thermal processing (RTP) for shorter times higher temperatures ( ≤ 30 sec, 800° C, 900° C) in an endeavour to suppress any long range movement of the Ga during the anneal phase. It is found that for both the furnace and RTP for temperatures ≤ 800°C no significant movement is observed and that the lower temperature anneal for the highest dose produces the highest electrical conductivity. By contrast however, annealing at 900° C, even though the initial conductivity is higher than for any other anneal we observe a significant reduction with time and extremely rapid movement of the dopant species throughout the original poly layer. An initial rationale for this behaviour is proposed in terms of a liquid phase transformation during annealing.

Study on the Microstructure of Polycrystalline Silicon Films Treated with Line Shaped Electron Beam

2007 ◽  
Vol 544-545 ◽  
pp. 471-474
Author(s):  
L. Fu ◽  
F. Gromball ◽  
J. Müller
Keyword(s):  
Electron Beam ◽  
Energy Density ◽  
Polycrystalline Silicon ◽  
Low Cost ◽  
Silicon Layer ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Capping Layer ◽  
Silicon Melt ◽  
Polycrystalline Silicon Films

Line shaped electron beam was used for the recrystallization of nanocrystalline silicon layer that had been deposited on the low cost borosilicate glass-substrate in this paper. Polycrystalline silicon films of a 20μm thickness, which are the base for a solar cell absorber, have been investigated. Tungstendisilicide (WSi2) was formed at the tungsten/silicon interface as well as grain boundaries of the silicon. WSi2 improved the wetting and adhesion of the silicon melt. The surface morphology of the film was strongly influenced by the recrystallization energy density applied. Low energy density resulted in non wetted WSi2/W areas due to the reaction between the silicon melt and the tungsten. With the increased energy, the capping layer become smooth and continuous due to the pinholes becomes fewer and smaller. Excess of the energy density led to larger voids in the capping layer, more WSi2/Si eutectic crystallites, a thinner tungsten layer, and a thicker tungstendisilicide layer.

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