Properties of Gallium Implanted Furnace and Rapidly Annealed Polycrystalline Silicon

1987 ◽  
Vol 92 ◽  
Author(s):  
H.B. Harrison ◽  
A.P. Pogany ◽  
Y. Komem
Keyword(s):  
Electrical Conductivity ◽  
Phase Transformation ◽  
Liquid Phase ◽  
Long Range ◽  
Thermal Processing ◽  
Polycrystalline Silicon ◽  
Rapid Thermal Processing ◽  
Significant Movement ◽  
Lower Temperature ◽  
Polycrystalline Silicon Films

ABSTRACTPolycrystalline silicon films have been amorphized by implantation with 100keV Ga ions of doses 0.3 and 6×1015cm−2. These films were subsequently recrystallized using either a furnace for longer times lower temperature (∼30 mins, 600° C) or rapid thermal processing (RTP) for shorter times higher temperatures ( ≤ 30 sec, 800° C, 900° C) in an endeavour to suppress any long range movement of the Ga during the anneal phase. It is found that for both the furnace and RTP for temperatures ≤ 800°C no significant movement is observed and that the lower temperature anneal for the highest dose produces the highest electrical conductivity. By contrast however, annealing at 900° C, even though the initial conductivity is higher than for any other anneal we observe a significant reduction with time and extremely rapid movement of the dopant species throughout the original poly layer. An initial rationale for this behaviour is proposed in terms of a liquid phase transformation during annealing.

Structural Properties of Polycrystalline Silicon Films Formed by Pulsed Rapid Thermal Processing

1998 ◽  
Vol 507 ◽  
Author(s):  
Yongqian Wang ◽  
Xianbo Liao ◽  
Hongwei Diao ◽  
Jie He ◽  
Zhixun Ma ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Thermal Processing ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Low Cost ◽  
Rapid Thermal Processing ◽  
Silicon Films ◽  
Large Area ◽  
Small Lattice ◽  
Polycrystalline Silicon Films

ABSTRACTA novel pulsed rapid thermal processing (PRTP) method has been used for realizing the solid-phase crystallization of amorphous silicon films prepared by PECVD. The microstructure and surface morphology of the crystallized films are investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). The results indicate that this PRTP is a suitable postcrystallization technique for fabricating large-area polycrystalline silicon films with good structural qualities such as large grain size, small lattice microstain and smooth surface morphology on low-cost substrate.

Structural properties of polycrystalline silicon films formed by pulsed rapid thermal processing

2002 ◽  
Vol 11 (5) ◽  
pp. 492-495 ◽  
Author(s):  
Wang Yong-Qian ◽  
Liao Xian-Bo ◽  
Diao Hong-Wei, Zhang Shi-Bin ◽  
Xu Yan-Yue ◽  
Chen Chang-Yong, Chen Wei-De ◽  
...  
Keyword(s):  
Structural Properties ◽  
Thermal Processing ◽  
Polycrystalline Silicon ◽  
Rapid Thermal Processing ◽  
Silicon Films ◽  
Polycrystalline Silicon Films

Using Rapid Thermal Processing to Induce Epitaxial Alignment of Polycrystalline Silicon Films on (100) Silicon

1986 ◽  
Vol 71 ◽  
Author(s):  
H.B. Harrison ◽  
S.T. Johnson ◽  
Y. Komem ◽  
C. Wong ◽  
S. Cohen
Keyword(s):  
Thermal Processing ◽  
Polycrystalline Silicon ◽  
Rapid Thermal Processing ◽  
Chemical Vapour ◽  
Treatment Phase ◽  
Growth Rate Constant ◽  
Pressure Chemical ◽  
Si Films ◽  
Polycrystalline Silicon Films ◽  
Initial Heat

AbstractUndoped polycrystalline silicon (poly-Si) films obtained by low pressure chemical vapour deposition (LPCVD) techniques have previously been demonstrated to align epitaxially with respect to the underlying (100) silicon substrate in the 1000-1100°C temperature regime. However the alignment rate at temperatures in excess of 1100°C is too rapid to be obtained by conventional furnace processing. Rapid Thermal Processing (RTP) offers an excellent technique of attaining this temperature in the requisite time and in this paper we report on the results of a study in which RTP has been used. Our results show an activation energy of ∼4.5eV, and that the growth rate constant is dramatically enhanced, without any alignment delay in the initial heat treatment phase, which is contrary to previous findings.

Effect of Nanocavities on the Thermoelectric Properties of Polycrystalline Silicon

2011 ◽  
Vol 1329 ◽  
Author(s):  
Ekaterina Selezneva ◽  
Andrea Arcari ◽  
Gilles Pernot ◽  
Elisabetta Romano ◽  
Gianfranco Cerofolini ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Polycrystalline Silicon ◽  
Figure Of Merit ◽  
Annealing Temperature ◽  
Silicon Films ◽  
Negative Effect ◽  
Polycrystalline Silicon Films

ABSTRACTNanostructuring has opened new ways to increase the thermoelectric performance of a host of materials, mainly by decreasing their thermal conductivity κ while preserving the Seebeck coefficient S and electrical conductivity σ. The thermoelectric properties of degenerated polycrystalline silicon films with nanocavities (NCs) have been studied as a function of annealing temperature upon isochronous annealings in argon carried out every 50°C in the range 500 – 1000°C which were used to modify the shape of the NCs. We found that presence of the NCs had no negative effect on the electronic properties of the system. The measured values of S and σ were close to those previously reported for the blank polycrystalline silicon films with the same doping level. The thermal conductivity was also found to be close to the value measured on the blank sample, about half of the reported value in polycrystals. This led to a power factor of 15.2 mWm-1K-2 and a figure of merit of 0.18 at 300 K.

Rapid Thermal Processing: A Bibliography

1985 ◽  
Vol 52 ◽  
Author(s):  
R. A. Powell ◽  
M. L. Manion
Keyword(s):  
Thermal Processing ◽  
Beam Energy ◽  
Polycrystalline Silicon ◽  
Rapid Thermal Processing ◽  
Compound Semiconductors ◽  
Dopant Activation ◽  
Broad Beam ◽  
Device Applications ◽  
And Diffusion

ABSTRACTThis bibliography presents 342 references to work published on rapid thermal processing (RTP) from 1979 through mid-1985. A variety of broad-beam energy sources are represented, including: arc and quartz-halogen lamps, blackbody radiators, strip heaters, broadly rastered electron beams, and defocused CO2 lasers. Citations were obtained by both manual searching and searching of a commercially available computerized data base (I NSPEC). Entries are grouped under 13 topical headings: reviews, implanted dopant activation and diffusion in silicon, polycrystalline silicon, silicides and polycides, metals, dielectrics, compound semiconductors, defects and microstructure, device applications (silicon and compound semiconductors), miscellaneous applications, equipment, and modeling. Within each group, citations are arranged alphabetically by title. A full author index is provided.

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