Stepped Gate Polysilicon Thin-Film Transistor for Large Area Power Applications

1998 ◽  
Vol 508 ◽  
Author(s):  
J. Aschenbeck ◽  
Y. Chen ◽  
F. Clough ◽  
Y. Z. Xu ◽  
E. M. Sankara Narayanan ◽  
...  
Keyword(s):  
Thin Film ◽  
Density Of States ◽  
Low Voltage ◽  
Thin Film Transistor ◽  
Device Performance ◽  
Two Dimensional ◽  
Large Area ◽  
Switching Speed ◽  
Field Plate ◽  
First Time

AbstractFor the first time, we report a new poly-Si stepped gate Thin Film Transistor (SG TFT) on glass. The Density of States extracted from measured I-V characteristics has been used to evaluate the device performance with a two dimensional device simulator. The results show that the three-terminal SG TFT device has a switching speed comparable to a low voltage structure and the high on-current capability of a metal field plate (MFP) TFT and the potential for comparable breakdown characteristics.

Stepped Gate Polysilicon Thin Film Transistor for Large Area Power Applications

1998 ◽  
Vol 507 ◽  
Author(s):  
J. Aschenbeck ◽  
Y. Chen ◽  
F. Clough ◽  
Y. Z. Xu ◽  
E. M. Sankara Narayanan ◽  
...  
Keyword(s):  
Thin Film ◽  
Density Of States ◽  
Low Voltage ◽  
Thin Film Transistor ◽  
Device Performance ◽  
Two Dimensional ◽  
Large Area ◽  
Switching Speed ◽  
Field Plate ◽  
First Time

ABSTRACTFor the first time, we report a new poly-Si stepped gate Thin Film Transistor (SG TFT) on glass. The Density of States extracted from measured I-V characteristics has been used to evaluate the device performance with a two dimensional device simulator. The results show that the three-terminal SG TFT device has a switching speed comparable to a low voltage structure and the high on-current capability of a metal field plate (MFP) TFT and the potential for comparable breakdown characteristics.

Amorpiious Silicon Thin Film Transistor and its Applications to Large-Area Electironics

1984 ◽  
Vol 33 ◽  
Author(s):  
H. C. Tuan
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistor ◽  
Two Dimensional ◽  
Large Area ◽  
Silicon Thin Film

ABSTRACTIn this paper, the amorphous silicon thin film transistor (a-Si:HTFT) technology is reviewed. Its applications to both one- and two-dimensional large-area devices are described. The issues related to the fabrication of TFT arrays on large-area substrates are also discussed.

Polysilicon High-Voltage TFT with Field-Plate-Controlled Offset Region

1990 ◽  
Vol 182 ◽  
Author(s):  
T. Y. Huang ◽  
I. W. Wu ◽  
A. G. Lewis ◽  
A. Chiang ◽  
R. H. Bruce
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Ion Implantation ◽  
High Voltage ◽  
Thin Film Transistor ◽  
Large Area ◽  
Process Flow ◽  
Field Plate ◽  
Turn On ◽  
Lightly Doped Drain

AbstractAn improved polysilicon high voltage thin film transistor (HVTFT) structure with field-plate-controlled offset region (FP-HVTFT) is proposed for eliminating the current-pinching phenomena often observed in the conventional offset-gate polysilicon HVTFTs. The new metal field plate serves, in lieu of ion implantation, to control the conductivity of the offset region. By properly biasing the field plate to distribute the drain electric field at both ends of the offset region, high-voltage operation of up to 100 V, suitable for many large-area applications, is achieved. Good turn-on characteristics without current-pinching effects are consistently obtained. Moreover, the new FP-HVTFT also eliminates the lightly-doped-drain implant normally required in conventional offset-gate HVTFTs, resulting in a simpler and more reproducible process flow.

Amorphous Silicon Thin Film Transistor Array Technology: Applications in Printing and Document Scanning

1987 ◽  
Vol 95 ◽  
Author(s):  
R. L. Weisfield ◽  
H. C. Tuan ◽  
L. Fennell ◽  
M. J. Thompson
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Low Voltage ◽  
Process Integration ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Large Area ◽  
Silicon Thin Film ◽  
Sensor Applications ◽  
Array Technology

AbstractAmorphous silicon (a-Si:H) thin-film transistor (TFT) array technology has been developed for new applications in low-cost, high-quality electronic printing. We have fabricated page-wide arrays of low-voltage pass transistors using a-Si:H TFTs for ionographic printing, in which voltages of 0 to 15 volts applied to a line of output electrodes modulate the flow of ions charging a dielectric receptor. High-voltage a-Si:H TFTs have been used in an electrographic printer to modulate high voltages required to initiate air discharges. Combining a-Si:H photodiodes on TFT arrays, we have also designed circuits for document scanning and photosensor amplifiers. TFT performance in relation to these novel printer and sensor applications will be discussed. Issues related to process integration, circuit design, and large-area fabrication technology will be addressed.

scholarly journals P‐10.1: Low‐voltage flexible thin‐film transistor based on C 3 N 4 /polyvinylpyrrolidone composite electrolyte

2021 ◽  
Vol 52 (S1) ◽  
pp. 566-569
Author(s):  
Yao-Hua Yang ◽  
Qi Chen ◽  
Xi-Feng Li ◽  
Jian-Hua Zhang ◽  
Jun Li
Keyword(s):  
Thin Film ◽  
Low Voltage ◽  
Thin Film Transistor ◽  
Composite Electrolyte

Low-voltage operation of the organic thin film transistor with a diagonal configuration

2003 ◽  
Author(s):  
Toshihide Kamata ◽  
Manabu Yoshida ◽  
Sei Uemura ◽  
Satoshi Hoshino ◽  
Noriyuki Takada ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Voltage ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Low Voltage Operation

Microstrip Gas Counters

2014 ◽  
pp. 31-51
Keyword(s):  
Glass Surface ◽  
Two Dimensional ◽  
Large Area ◽  
Proportional Chamber ◽  
Microelectronic Technology ◽  
Multiwire Proportional Chamber ◽  
Dimensional Version ◽  
A Chain ◽  
New Generation ◽  
First Time

In this chapter, the first micropattern gaseous detector, the microstrip gas counter, invented in 1988 by A. Oed, is presented. It consists of alternating anode and cathode strips with a pitch of less than 1 mm created on a glass surface. It can be considered a two-dimensional version of a multiwire proportional chamber. This was the first time microelectronic technology was applied to manufacturing of gaseous detectors. This pioneering work offers new possibilities for large area planar detectors with small gaps between the anode and the cathode electrodes (less than 0.1 mm). Initially, this detector suffered from several serious problems, such as charging up of the substrate, discharges which destroyed the thin anode strips, etc. However, by efforts of the international RD28 collaboration hosted by CERN, most of them were solved. Although nowadays this detector has very limited applications, its importance was that it triggered a chain of similar developments made by various groups, and these collective efforts finally led to the creation of a new generation of gaseous detectors-micropattern detectors.

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