In Situ Characterization of Ain Films Grown on Silicon by MOCVD

1998 ◽  
Vol 512 ◽  
Author(s):  
A. D. Serra ◽  
H. H. Richardson

ABSTRACTFilms of AIN were grown on Si under vacuum pressure at 900°C and examined ex situ with infrared reflectance spectroscopy and microscopy, scanning electron microscopy, x-ray diffraction and rutherford backscattering spectroscopy. Collection of IR emission spectra for in situ characterization was successful and used to identify growth parameters during film growth.

Soft Matter ◽  
2019 ◽  
Vol 15 (4) ◽  
pp. 734-743 ◽  
Author(s):  
Pinzhang Chen ◽  
Jingyun Zhao ◽  
Yuanfei Lin ◽  
Jiarui Chang ◽  
Lingpu Meng ◽  
...  

The structural evolution of NR during stretching at −40 °C and in the strain–temperature space.


2009 ◽  
Vol 145 (3-4) ◽  
pp. 188-194 ◽  
Author(s):  
José A. Rodriguez ◽  
Jonathan C. Hanson ◽  
Wen Wen ◽  
Xianqin Wang ◽  
Joaquín L. Brito ◽  
...  

2020 ◽  
Vol 104 (3) ◽  
pp. 1424-1435
Author(s):  
Michael W. Knauf ◽  
Craig P. Przybyla ◽  
Paul A. Shade ◽  
Jun‐Sang Park ◽  
Andrew J. Ritchey ◽  
...  

2014 ◽  
Vol 307 ◽  
pp. 372-381 ◽  
Author(s):  
Nathália C. Verissimo ◽  
Alessandra Cremasco ◽  
Christiane A. Rodrigues ◽  
Rodnei Bertazzoli ◽  
Rubens Caram

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