The Role of Hydrogen in Semi-Insulating Inp

ABSTRACTComplexes of vacancy at indium site with one to four hydrogen atoms and isolated hydrogen or hydrogen dimer and other infrared absorption lines, tentatively be assigned to hydrogen related defects were investigated by FTIR. Hydrogen can passivate imperfections, thereby eliminating detrimental electronic states from the energy bandgap.Incorporated hydrogen can introduce extended defects and generate electrically-active defects. Hydrogen also can acts as an actuator for creating of antistructure defects. Isolated hydrogen related defects(e.g. H12+) may play an important role in the conversion of the annealed wafers from semiconducting to the semi-insulating behavior. H2+ may be a deep donor, whose energy level is very near the iron deep acceptor level in the energy gap.

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Influence of high-temperature annealing on the characteristics of fast electron-irradiated p-n-structures based on neutron doped silicon

Proceedings of the National Academy of Sciences of Belarus Physics and Mathematics Series ◽

10.29235/1561-2430-2019-55-4-489-497 ◽

2020 ◽

Vol 55 (4) ◽

pp. 489-497

Author(s):

F. P. Korshunov ◽

N. E. Zhdanovich ◽

D. N. Zhdanovich

Keyword(s):

Annealing Temperature ◽

High Electron ◽

Acceptor Level ◽

Deep Acceptor ◽

Temperature Range ◽

Subsequent Decrease ◽

Deep Acceptor Level ◽

Doped Silicon ◽

Deep Donor ◽

Two Stages

The investigation results of the annealing influence (Тann = 300–800 ºС) on the minority charge currier lifetime tP in the n-base of p-n-structures, manufactured on the base of neutron transmutation doped silicon (NTD) КОФ300, irradiated at room temperature by different fluences (F = 1 · 1014 – 3 · 1016 cm–2) of electrons with the energy of Еe = 4 MeV are presented. It is established that at low electron fluences (F = 1 · 1014 cm–2), the annealing of minority charge currier lifetime tP in the n-base of p-n-structures occurs in two stages: the first – 320–400 ºС and the second – 550–650 ºС. At higher electron fluences (F = 5 · 1015–2 · 1016 cm–2), three annealing stages occur: the first – 400–450 ºС, the second – 520–650 ºС and the third – 710–770 ºС. At this, the structure barrier capacitance C dependences on Тann at high electron fluences show the geometry capacitance up to the annealing temperatures Тann = 400 ºС. In the annealing temperature range of Тann = 420–570 ºС, the increase in С with maximum is seen at Тann = 480 ºС and a subsequent decrease in the geometry capacitance is seen in the annealing temperature range of Тann = 600–670 ºС, and then again the increase in С occurs in the annealing temperature range of Тann = 720–770 ºС reaching the С values corresponding to those of the non-irradiated samples in the annealing temperature range of Тann = 770–800 ºС. The analysis of the DLTS-spectra of the investigated structures has allowed establishing the formation in the annealing process of the deep acceptor level ЕС – 0.68 eV at Тann > 400 ºС, the deep donor level ЕС – 0.32 eV in the annealing temperature range of Тann = 420–570 ºС and the deep acceptor level ЕС – 0.53 eV at Тann > 700 ºС, which satisfactorily explains the dependences of t P and С on Тann obtained in this paper.

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Deep Acceptor Level in Heat Treated Indium Antimonide

physica status solidi (b) ◽

10.1002/pssb.19690330263 ◽

1969 ◽

Vol 33 (2) ◽

pp. K129-K132 ◽

Cited By ~ 4

Author(s):

P. Kordoš

Keyword(s):

Indium Antimonide ◽

Acceptor Level ◽

Deep Acceptor ◽

Heat Treated ◽

Deep Acceptor Level

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Identification of a Deep Acceptor Level in ZnO Due to Silver Doping

Journal of Electronic Materials ◽

10.1007/s11664-009-1025-7 ◽

2009 ◽

Vol 39 (5) ◽

pp. 577-583 ◽

Cited By ~ 14

Author(s):

J. Chai ◽

R. J. Mendelsberg ◽

R. J. Reeves ◽

J. Kennedy ◽

H. von Wenckstern ◽

...

Keyword(s):

Acceptor Level ◽

Silver Doping ◽

Deep Acceptor ◽

Deep Acceptor Level

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Characterization of deep acceptor level in as-grown ZnO thin film by molecular beam epitaxy

Chinese Physics B ◽

10.1088/1674-1056/23/9/097101 ◽

2014 ◽

Vol 23 (9) ◽

pp. 097101 ◽

Cited By ~ 2

Author(s):

M. Asghar ◽

K. Mahmood ◽

M. A. Hasan ◽

I. T. Ferguson ◽

R. Tsu ◽

...

Keyword(s):

Thin Film ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Zno Thin Film ◽

Acceptor Level ◽

Deep Acceptor ◽

Deep Acceptor Level

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Studies on the Interface of TiN/n-GaAs

MRS Proceedings ◽

10.1557/proc-337-325 ◽

1994 ◽

Vol 337 ◽

Author(s):

Ho Jie ◽

Jin Gaolong ◽

Lu Liwu ◽

Xu Zhenjia ◽

Zhang Lichun

Keyword(s):

Energy Level ◽

Hall Effect ◽

Refractory Metal ◽

Schottky Contacts ◽

Electrical Performance ◽

Metal Nitrides ◽

Donor Level ◽

Acceptor Level ◽

Type Layer

ABSTRACTRecent reports on refractory metal nitrides/n-GaAs Schottky contacts have demonstrated that improved electrical performance can be obtained after annealing at temperature between 750 and 850°C . It is thought that a p+-type layer should be responsible for this phenomenon, which may be generated by N or N related defects. In this paper, the role of nitrogen in SI-GaAs and n-GaAs has been investigated by Hall effect and DLTS measurements. No evidence of the formation of a p+-type layer has been observed. A deep energy level of Ec-0.36eV which is thought to be related to N and an enhanced effect of N on the density of EL2 level were observed. DLTS and SIMS techniques were used to study the interface of TiN/n-GaAs Schottky contacts. The Ti3+(3d1)/Ti2+(3d2) single acceptor level at Ec-0.21 eV was observed, but the EL2 donor level is dominant. Combining the experimental results, a discussion is made about the reasons for the improvements of electrical performance after annealing.

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