Characterization of deep acceptor level in as-grown ZnO thin film by molecular beam epitaxy

2014 ◽  
Vol 23 (9) ◽  
pp. 097101 ◽  
Author(s):  
M. Asghar ◽  
K. Mahmood ◽  
M. A. Hasan ◽  
I. T. Ferguson ◽  
R. Tsu ◽  
...  
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zno Thin Film ◽  
Acceptor Level ◽  
Deep Acceptor ◽  
Deep Acceptor Level

Growth and Characterization of AlBN Polycrystalline Thin Film by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

2006 ◽  
Vol 301 ◽  
pp. 95-98 ◽  
Author(s):  
Masashi Yamashita ◽  
Yukari Ishikawa ◽  
Hitoshi Ohsato ◽  
Noriyoshi Shibata
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Photoelectron Spectroscopy ◽  
Molecular Beam ◽  
High Energy ◽  
Radio Frequency Plasma ◽  
Group Iii ◽  
Frequency Plasma

An AlBN thin film with a boron content (B/(Al+B)) of 0.1 or 0.3 was obtained by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) using EB-guns as group-III element sources and an RF radical source for nitrogen supply. We compared the characteristics of the film with those of AlN and BN films. By reflective high-energy electron diffraction (RHEED), we observed ring patterns in the AlBN film. The X-ray photoelectron spectroscopy (XPS) N1s peak of the AlBN film was observed at a binding energy between the peaks of AlN and BN. There was no evidence for phase separation in the film.

Characterization of Cu2O Thin Film Grown by Molecular Beam Epitaxy

2013 ◽  
Vol 582 ◽  
pp. 157-160 ◽  
Author(s):  
Takumi Oshima ◽  
Masaya Nohara ◽  
Takuya Hoshina ◽  
Hiroaki Takeda ◽  
Takaaki Tsurumi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Deposition Rate ◽  
Crystal Orientation ◽  
Molecular Beam ◽  
Good Crystallinity ◽  
Relationship Of

We report the growth of Cu2O thin films on glass and MgO(100) substrates by molecular beam epitaxy. Crystal orientation of Cu2O thin films on glass substrate were changed from (100) to (111) with increasing the deposition rate. The Cu2O thin films were epitaxially grown on MgO(100) substrate with an orientation relationship of Cu2O(110) // MgO(100). The film quality and electrical properties of Cu2O thin films were changed with deposition rate. The slow deposition rate resulted in high conductivity and mobility, as well as good crystallinity and orientation.

Studies on temperature- and excitation-power-dependent photoluminescence of ZnO thin film grown by plasma-assisted molecular beam epitaxy

2013 ◽  
Vol 13 ◽  
pp. S168-S171 ◽  
Author(s):  
Giwoong Nam ◽  
Hyunggil Park ◽  
Hyunsik Yoon ◽  
Jong Su Kim ◽  
Jae-Young Leem
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Excitation Power ◽  
Zno Thin Film

Origin of green luminescence in ZnO thin film grown by molecular-beam epitaxy

2005 ◽  
Vol 98 (7) ◽  
pp. 073502 ◽  
Author(s):  
Y. W. Heo ◽  
D. P. Norton ◽  
S. J. Pearton
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zno Thin Film ◽  
Green Luminescence

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

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