Deuterium Diffusion, Trapping and Stability in Buried Silicon Dioxide Layers

1998 ◽  
Vol 513 ◽  
Author(s):  
A. Boutry-Forveille ◽  
A. Nazarov ◽  
D. Ballutaud
Keyword(s):  
Mass Spectrometry ◽  
Silicon Dioxide ◽  
Isothermal Annealing ◽  
Secondary Ion Mass Spectrometry ◽  
Oxide Layers ◽  
Buried Oxide ◽  
Different Temperatures ◽  
Hydrogen Deuterium ◽  
Secondary Ion ◽  
Diffusion Profiles

ABSTRACTThe interaction of hydrogen (deuterium used as tracer) with Si-Si02-Si buried oxide layers (BOX) prepared by thermal oxidation or by oxygen implantation (SIMOX) are investigated using Secondary Ion Mass Spectrometry (SIMS) measurements combined with effusion experiments. The sample deuteration is performed at different temperatures between 150 and 300°C using a radiofrequency plasma. In SIMOX samples, the deuterium diffusion profiles analysed by SIMS show deuterium trapping on implantation defects, and deuterium diffusion in the silicon substrate by permeation through the oxide layer for temperatures higher than 250°C. The deuterium is still detected in the buried oxide layers after isothermal annealing at 600°C during 2 hours. The deuterium trapping at the siliconsilicon dioxide interfaces is analysed.

Oxygen Self-Diffusion in Silicon Dioxide: Effect of the Si/SiO2 Interface

2006 ◽  
Vol 258-260 ◽  
pp. 554-561 ◽  
Author(s):  
Masashi Uematsu ◽  
Marika Gunji ◽  
Kohei M. Itoh
Keyword(s):  
Mass Spectrometry ◽  
Silicon Dioxide ◽  
Oxygen Isotopes ◽  
Secondary Ion Mass Spectrometry ◽  
Oxidation Time ◽  
Diffusion Region ◽  
Sio2 Surface ◽  
Self Diffusion ◽  
Secondary Ion ◽  
Diffusion Profiles

The effect of the SiO2/Si interface on oxygen self-diffusion in SiO2 during thermal oxidation was investigated using oxygen isotopes. A Si18O2 layer was first grown in 18O2 and then the sample was reoxidized in 16O2 at 900 ~ 1100 °C. The O diffusion in SiO2 during the 16O2 oxidation was investigated by secondary ion mass spectrometry (SIMS) measurements. Near the SiO2/Si interface, a significant broadening of the 18O profile toward the newly grown Si16O2 was observed. This 18O diffusion became slower with oxidation time and hence with increasing distance between 18O diffusion region and the interface. This distance-dependent 18O self-diffusion was simulated taking into account the effect of SiO generated at the interface upon oxidation and diffusing into SiO2 to enhance O self-diffusion. The simulation fits the SIMS profiles and shows that the SiO diffusion is greatly retarded by the oxidation with O2 from the oxygen-containing atmosphere and that the O self-diffusion therefore becomes distance-dependent. In addition, near the SiO2 surface, 16O diffusion profiles develop with the 16O2 oxidation time from the surface into the initially grown Si18O2. The integrated surface 16O concentration increases with oxidation time and the SiO from the interface affects the O self-diffusion near the surface as well.

Donor Creation During Oxygen Implanted Buried Oxide Formation

1985 ◽  
Vol 53 ◽  
Author(s):  
M. Delfino ◽  
P.K. Chu
Keyword(s):  
Mass Spectrometry ◽  
Oxide Layer ◽  
Silicon Surface ◽  
Secondary Ion Mass Spectrometry ◽  
Electron Conductivity ◽  
Oxide Formation ◽  
Oxygen Ions ◽  
Buried Oxide ◽  
High Concentrations ◽  
Secondary Ion

ABSTRACTEnhanced electron conductivity is observed in silicon that has been implanted with oxygen ions to form a buried oxide layer. The conductivity is attributed to donors that are created in the silicon both above and below the oxide. Secondary ion mass spectrometry and Rutherford backscattering spectroscopy show that, during subsequent annealing, oxygen accumulates only in the silicon surface. This causes the donors in the silicon surface to be easily activated to high concentrations and, unlike donors beneath the oxide, to be extremely resistant to thermal annihilation.

MeV Boron Implantation and Masking

1993 ◽  
Vol 316 ◽  
Author(s):  
James P. Lavine ◽  
A. J. Filo ◽  
D. L. Losee ◽  
P. A. Guidash ◽  
S.-T. Lee ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Silicon Dioxide ◽  
Secondary Ion Mass Spectrometry ◽  
Thick Layer ◽  
High Energy ◽  
Boron Implantation ◽  
Boron Ions ◽  
Pass Through ◽  
Metal Layers ◽  
Secondary Ion

ABSTRACTBoron depth distributions are reported for MeV implants into silicon through a variety of masking materials. Silicon is implanted with boron through a 0.1-µm-thick layer of thermally grown silicon dioxide. Secondary ion mass spectrometry (SIMS) shows the projected ranges agree within 10% with data reported in the literature and with results from the computer program TRIM. Silicon dioxide, photoresist, and metal layers are used to mask the high-energy boron implants. The SIMS results indicate that TRIM overestimates the energy loss of MeV boron ions as they pass through photoresist and/or silicon dioxide.

Investigation of Titanium Silicide Formation Using Secondary Ion Mass Spectrometry

1994 ◽  
Vol 342 ◽  
Author(s):  
Andrew T.S. Wee ◽  
Alfred C.H. Huan ◽  
W.H. Thian ◽  
K.L. Tan ◽  
Royston Hogan
Keyword(s):  
Mass Spectrometry ◽  
Photoelectron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Titanium Silicide ◽  
Formation Mechanisms ◽  
Silicide Formation ◽  
Formation Reaction ◽  
Ion Mass Spectrometry ◽  
Different Temperatures ◽  
Secondary Ion

ABSTRACTSecondary ion mass spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS) are used to investigate Ti silicide formation mechanisms on a series of Ti on Si thin films annealed in ultrahigh vacuum (UHV) at different temperatures and durations. The competition between oxygen diffusion and the silicide formation reaction (the socalled “snowplough” effect) is observed directly, as well as a Ti-Si-O layer. The results from these controlled experiments are compared with those from Ti silicide films formed under rapid thermal annealing (RTA) conditions in a production furnace, with and without a TiW barrier layer.

scholarly journals Redistribution of Metallic Impurities in Si during Annealing and Oxidation: W and Fe

2018 ◽  
Vol 383 ◽  
pp. 17-22
Author(s):  
Alain Portavoce ◽  
Anthony De Luca ◽  
Nelly Burle ◽  
Michaël Texier
Keyword(s):  
Isothermal Annealing ◽  
Secondary Ion Mass Spectrometry ◽  
Dissolution Mechanism ◽  
Transmission Electron ◽  
Diffusion Mechanisms ◽  
Core Shell Structure ◽  
Secondary Ion ◽  
Metallic Impurities ◽  
Diffusion Profiles ◽  
Si Wafer

Atomic redistribution of W and Fe in Si were studied using secondary ion mass spectrometry and transmission electron microscopy. W diffusion experiments performed during isothermal annealing and during Si oxidation show that W atoms should use at least two different diffusion mechanisms. Experimental diffusion profiles can be well simulated by considering the simultaneous use of three different W diffusion mechanisms: the dissociative and the kick-out mechanisms, as well as an original mechanism based on the formation of a W-Si self-interstitial pair located on the interstitial Si sub-lattice. Fe redistribution was studied during the oxidation of a Fe-contaminated Si wafer. Fe is shown to be first pushed-out in Si by the mobile SiO2/Si interface, and thus to form Fe silicides precipitates at this interface. The silicide precipitates, which can exhibit a core-shell structure, appear to move with the SiO2/Si interface thanks to an oxidation/dissolution mechanism in the SiO2 and a nucleation/growth mechanism in the Si matrix. Furthermore, the rate difference between Si and Fe silicide precipitate oxidation leads to the formation of Si pyramidal defects at the SiO2/Si interface.

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