scholarly journals Redistribution of Metallic Impurities in Si during Annealing and Oxidation: W and Fe

2018 ◽  
Vol 383 ◽  
pp. 17-22
Author(s):  
Alain Portavoce ◽  
Anthony De Luca ◽  
Nelly Burle ◽  
Michaël Texier
Keyword(s):  
Isothermal Annealing ◽  
Secondary Ion Mass Spectrometry ◽  
Dissolution Mechanism ◽  
Transmission Electron ◽  
Diffusion Mechanisms ◽  
Core Shell Structure ◽  
Secondary Ion ◽  
Metallic Impurities ◽  
Diffusion Profiles ◽  
Si Wafer

Atomic redistribution of W and Fe in Si were studied using secondary ion mass spectrometry and transmission electron microscopy. W diffusion experiments performed during isothermal annealing and during Si oxidation show that W atoms should use at least two different diffusion mechanisms. Experimental diffusion profiles can be well simulated by considering the simultaneous use of three different W diffusion mechanisms: the dissociative and the kick-out mechanisms, as well as an original mechanism based on the formation of a W-Si self-interstitial pair located on the interstitial Si sub-lattice. Fe redistribution was studied during the oxidation of a Fe-contaminated Si wafer. Fe is shown to be first pushed-out in Si by the mobile SiO2/Si interface, and thus to form Fe silicides precipitates at this interface. The silicide precipitates, which can exhibit a core-shell structure, appear to move with the SiO2/Si interface thanks to an oxidation/dissolution mechanism in the SiO2 and a nucleation/growth mechanism in the Si matrix. Furthermore, the rate difference between Si and Fe silicide precipitate oxidation leads to the formation of Si pyramidal defects at the SiO2/Si interface.

Deuterium Diffusion, Trapping and Stability in Buried Silicon Dioxide Layers

1998 ◽  
Vol 513 ◽  
Author(s):  
A. Boutry-Forveille ◽  
A. Nazarov ◽  
D. Ballutaud
Keyword(s):  
Mass Spectrometry ◽  
Silicon Dioxide ◽  
Isothermal Annealing ◽  
Secondary Ion Mass Spectrometry ◽  
Oxide Layers ◽  
Buried Oxide ◽  
Different Temperatures ◽  
Hydrogen Deuterium ◽  
Secondary Ion ◽  
Diffusion Profiles

ABSTRACTThe interaction of hydrogen (deuterium used as tracer) with Si-Si02-Si buried oxide layers (BOX) prepared by thermal oxidation or by oxygen implantation (SIMOX) are investigated using Secondary Ion Mass Spectrometry (SIMS) measurements combined with effusion experiments. The sample deuteration is performed at different temperatures between 150 and 300°C using a radiofrequency plasma. In SIMOX samples, the deuterium diffusion profiles analysed by SIMS show deuterium trapping on implantation defects, and deuterium diffusion in the silicon substrate by permeation through the oxide layer for temperatures higher than 250°C. The deuterium is still detected in the buried oxide layers after isothermal annealing at 600°C during 2 hours. The deuterium trapping at the siliconsilicon dioxide interfaces is analysed.

Effects of Concurrent Co or Ti Silicidation on Transient Diffusion and End-of-Range Damage in Phosphorus Implanted Silicon

1992 ◽  
Vol 262 ◽  
Author(s):  
J.W. Honeycutt ◽  
J. Ravi ◽  
G. A. Rozgonyi
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Complete Removal ◽  
Dislocation Loops ◽  
Enhanced Diffusion ◽  
Depth Profiles ◽  
Enhanced Dissolution ◽  
Implantation Damage ◽  
Transmission Electron ◽  
Defect Behavior ◽  
Secondary Ion

ABSTRACTThe effects of Ti and Co silicidation on P+ ion implantation damage in Si have been investigated. After silicidation of unannealed 40 keV, 2×1015 cm-2 P+ implanted junctions by rapid thermal annealing at 900°C for 10–300 seconds, secondary ion mass spectrometry depth profiles of phosphorus in suicided and non-silicided junctions were compared. While non-silicided and TiSi2 suicided junctions exhibited equal amounts of transient enhanced diffusion behavior, the junction depths under COSi2 were significantly shallower. End-of-range interstitial dislocation loops in the same suicided and non-silicided junctions were studied by planview transmission electron microscopy. The loops were found to be stable after 900°C, 5 minute annealing in non-silicided material, and their formation was only slightly effected by TiSi2 or COSi2 silicidation. However, enhanced dissolution of the loops was observed under both TiSi2 and COSi2, with essentially complete removal of the defects under COSi2 after 5 minutes at 900°C. The observed diffusion and defect behavior strongly suggest that implantation damage induced excess interstitial concentrations are significantly reduced by the formation and presence of COSi2, and to a lesser extent by TiSi2. The observed time-dependent defect removal under the suicide films suggests that vacancy injection and/or interstitial absorption by the suicide film continues long after the suicide chemical reaction is complete.

scholarly journals Transport and Electromechanical Properties of Ca3TaGa3Si2O14 Piezoelectric Crystals at Extreme Temperatures

MRS Advances ◽  
2019 ◽  
Vol 4 (09) ◽  
pp. 515-521
Author(s):  
Yuriy Suhak ◽  
Ward L. Johnson ◽  
Andrei Sotnikov ◽  
Hagen Schmidt ◽  
Holger Fritze
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Tone Burst ◽  
Total Conductivity ◽  
Transport Mechanisms ◽  
Electromechanical Properties ◽  
Self Diffusion ◽  
Oxygen Ion ◽  
Piezoelectric Strain ◽  
Secondary Ion ◽  
Diffusion Profiles

ABSTRACTTransport mechanisms in structurally ordered piezoelectric Ca3TaGa3Si2O14 (CTGS) single crystals are studied in the temperature range of 1000-1300 °C by application of the isotope 18O as a tracer and subsequent analysis of diffusion profiles of this isotope using secondary ion mass spectrometry (SIMS). Determined oxygen self-diffusion coefficients enable calculation of oxygen ion contribution to the total conductivity, which is shown to be small. Since very low contributions of the cations have to be expected, the total conductivity must be dominated by electron transport. Ion and electron conductivities are governed by different mechanisms with activation energies (1.9±0.1) eV and (1.2±0.07) eV, respectively. Further, the electromechanical losses are studied as a function of temperature by means of impedance spectroscopy on samples with electrodes and a contactless tone-burst excitation technique. At temperatures above 650 °C the conductivity-related losses are dominant. Finally, the operation of CTGS resonators is demonstrated at cryogenic temperatures and materials piezoelectric strain constants are determined from 4.2 K to room temperature.

scholarly journals Изменение структуры и свойств приповерхностного слоя Si, имплантированного Zn, в зависимости от флюенса облучения ионами -=SUP=-132-=/SUP=-Xe-=SUP=-26+-=/SUP=- с энергией 167 МэВ

2019 ◽  
Vol 53 (3) ◽  
pp. 332
Author(s):  
В.В. Привезенцев ◽  
В.С. Куликаускас ◽  
В.А. Скуратов ◽  
О.С. Зилова ◽  
А.А. Бурмистров ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Zinc Oxide ◽  
Cross Section ◽  
Secondary Ion Mass Spectrometry ◽  
Sample Surface ◽  
Transmission Electron ◽  
Oxide Phases ◽  
Secondary Ion ◽  
Surface Pores ◽  
Scanning Electron

AbstractSingle-crystal n -Si(100) wafers are implanted with ^64Zn^+ ions with an energy of 50 keV and dose of 5 × 10^16 cm^–2. Then the samples are irradiated with ^132Xe^26+ ions with an energy of 167 MeV in the range of fluences from 1 × 10^12 to 5 × 10^14 cm^–2. The surface and cross section of the samples are visualized by scanning electron microscopy and transmission electron microscopy. The distribution of implanted Zn atoms is studied by time-of-flight secondary-ion mass spectrometry. After irradiation with Xe, surface pores and clusters consisting of a Zn–ZnO mixture are observed at the sample surface. In the amorphized subsurface Si layer, zinc and zinc-oxide phases are detected. After irradiation with Xe with a fluence of 5 × 10^14 cm^–2, no zinc or zinc-oxide clusters are detected in the samples by the methods used in the study.

Determination of the Distribution of Ion Implantation Boron in Silicon

2000 ◽  
Vol 650 ◽  
Author(s):  
Te-Sheng Wang ◽  
A.G. Cullis ◽  
E.J.H. Collart ◽  
A.J. Murrell ◽  
M.A. Foad
Keyword(s):  
Electron Microscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Low Energy ◽  
Concentration Profiles ◽  
Impurity Profile ◽  
Transmission Electron ◽  
Device Applications ◽  
P Type ◽  
Secondary Ion

ABSTRACTBoron is the most important p-type dopant in Si and it is essential that, especially for low energy implantation, both as-implanted B distributions and those produced by annealing should be characterized in very great detail to obtain the required process control for advanced device applications. While secondary ion mass spectrometry (SIMS) is ordinarily employed for this purpose, in the present studies implant concentration profiles have been determined by direct B imaging with approximately nanometer depth and lateral resolution using energy-filtered imaging in the transmission electron microscopy. The as-implanted B impurity profile is correlated with theoretical expectations: differences with respect to the results of SIMS measurements are discussed. Changes in the B distribution and clustering that occur after annealing of the implanted layers are also described.

Effects of Sputtered Ir and IrO2 Electrodes on the Properties of PZT Thin Films Deposited By MOCVD

1997 ◽  
Vol 493 ◽  
Author(s):  
M. Shimizu ◽  
H. Fujisawa ◽  
S. Hyodo ◽  
S. Nakashima ◽  
H. Niu ◽  
...  
Keyword(s):  
Bottom Electrode ◽  
Secondary Ion Mass Spectrometry ◽  
Rf Magnetron Sputtering ◽  
Electrode Thickness ◽  
Pzt Thin Films ◽  
Transmission Electron ◽  
Pzt Films ◽  
Sims Analysis ◽  
Secondary Ion ◽  
Strong Diffusion

ABSTRACTThe effect of bottom electrode thickness on the electrical properties of PZT capacitors with Ir and IrO2, electrodes was investigated, with particular attention to switching endurance characteristics. Ir and IrO2 electrodes were prepared by rf magnetron sputtering. PZT films were grown by MOCVD. Secondary ion mass spectrometry (SIMS) analysis showed thick Ir and IrO2 electrodes performed well as a barrier to the PZT elements. On the other hand, strong diffusion at the interface between PZT and the electrodes was observed, when the Ir and IrO2 electrodes were thin. From transmission electron microscope (TEM) observation, it was also found that there was an amorphous intermediate layer at the interface between the PZT and the thick Ir bottom electrode. The switching endurance characteristics were influenced by the thickness of the Ir bottom electrode.

scholarly journals Microstructure and Thermal Stability of Transition Metal Nitrides and Borides on GaN

2000 ◽  
Vol 622 ◽  
Author(s):  
Jacek Jasiński ◽  
Eliana Kamińska ◽  
Anna Piotrowska ◽  
Adam Barcz ◽  
Marcin Zieliński
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Thermal Stability ◽  
Contact Structure ◽  
Secondary Ion Mass Spectrometry ◽  
Metal Nitrides ◽  
Transition Metal Nitrides ◽  
Transmission Electron ◽  
Secondary Ion ◽  
Thermal Stability Of

ABSTRACTMicrostructure and thermal stability of ZrN/ZrB2 bilayer deposited on GaN have been studied using transmission electron microscopy methods (TEM) and secondary ion mass spectrometry (SIMS). It has been demonstrated that annealing of the contact structure at 1100°C in N2 atmosphere does not lead to any observable metal/semiconductor interaction. In contrast, a failure of the integrity of ZrN/ZrB2 metallization at 800°C, when the heat treatment is performed in O2 ambient has been observed.

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