Properties of Epitaxial ZnO Thin Films for GaN and Related Applications

1998 ◽  
Vol 537 ◽  
Author(s):  
H. Shen ◽  
M. Wraback ◽  
J. Pamulapati ◽  
S. Liang ◽  
C. Gorla ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Anisotropy ◽  
Polarized Light ◽  
Chemical Vapor ◽  
Zno Thin Films ◽  
Organic Chemical ◽  
Zno Films ◽  
Light Modulator ◽  
Cross Sectional ◽  
Linearly Polarized

AbstractIn this paper, we present a detailed study of high quality (110) ZnO films, epitaxially grown on R-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The epitaxial relationships are (1120) ZnO//(0112) Al2O3 and {0001} ZnO//[0111] A12O3 as confirmed by X-ray diffraction (θ-2θ, and φ-scan) and high-resolution cross-sectional transmission electron microscopy (HR-TEM). Low temperature photoluminescence (PL) indicates the ZnO thin films are almost strain free. Optical absorption and reflection measurements with linearly polarized light indicate a strong optical anisotropy. The polarization rotation towards the C-axis associated with the optical anisotropy is utilized to demonstrate an optically addressed ultra-fast, ultraviolet light modulator.

scholarly journals Properties of Epitaxial Zno Thin Films for Gan and Related Applications

1999 ◽  
Vol 4 (S1) ◽  
pp. 339-343
Author(s):  
H. Shen ◽  
M. Wraback ◽  
J. Pamulapati ◽  
S. Liang ◽  
C. Gorla ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Anisotropy ◽  
Polarized Light ◽  
Chemical Vapor ◽  
Zno Thin Films ◽  
Organic Chemical ◽  
Zno Films ◽  
Light Modulator ◽  
Cross Sectional ◽  
Image Position

In this paper, we present a detailed study of high quality (110) ZnO films, epitaxially grown on R-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The epitaxial relationships are (11 0 ) ZnO//( 01 2 ) Al2O3 and [0001] ZnO//[011] Al2O3 as confirmed by X-ray diffraction (θ-2θ, and ϕ-scan) and high-resolution cross-sectional transmission electron microscopy (HR-TEM). Low temperature photoluminescence (PL) indicates the ZnO thin films are almost strain free. Optical absorption and reflection measurements with linearly polarized light indicate a strong optical anisotropy. The polarization rotation towards the C-axis associated with the optical anisotropy is utilized to demonstrate an optically addressed ultra-fast, ultraviolet light modulator.

Plasma-Assisted MOCVD Growth of ZnO Thin Films

2005 ◽  
Vol 892 ◽  
Author(s):  
Maria Losurdo ◽  
Maria Michela Giangregorio ◽  
Pio Capezzuto ◽  
Giovanni Bruno ◽  
Graziella Malandrino ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Optical Quality ◽  
Zno Thin Films ◽  
Zno Films ◽  
Mocvd Growth ◽  
Metalorganic Chemical

AbstractZnO thin films have been grown by metalorganic chemical vapor deposition (MOCVD) also plasma assisted (PA-MOCVD) on c-axis oriented sapphire (0001) and Si(001) substrates using the alternative Zn(TTA)2·tmed (HTTA=2-thenoyltrifluoroacetone,TMED=N,N,N’,N’-tetramethylethylendiamine) precursor. The structural, morphological and optical properties of ZnO films have been investigated. The results show that the O2 plasma assisted growth results in an improvement of the structure, in smoother morphologies and in a better optical quality with a sharp and intense exciton of ZnO films.

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