Synthesis of Epitaxial Thin-Films of Tetragonal Perovskites Via a Solution Technique

1998 ◽  
Vol 547 ◽  
Author(s):  
David B. Beach ◽  
Jonathan S. Morrell ◽  
Ziling B. Xue ◽  
Eliot D. Specht
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Epitaxial Films ◽  
Solution Chemistry ◽  
Solution Technique ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Spin Casting

AbstractSolution chemistry has been used to synthesize epitaxial films of SrLaGaO4, SrPrGaO4, SrLaAlO4, and SrPrAlO4 on single crystal substrates of [100] SrTiO3 and [100] LaAlO3. Precursor solutions were prepared from metal methoxyethoxides in 2-methoxyethanol. Films were prepared by spin-casting from partially hydrolyzed solutions followed by firing for 20 minutes in air at 850°C. The structure of the films was determined using X-ray diffraction. Theta/2-theta scans and omega scans (rocking curves) indicated that the films were c-axis aligned. Phi scans proved that the films were also aligned in-plane.

Fabrication of heteroepitaxial thin films of layered oxychalcogenides LnCuOCh (Ln = La–Nd; Ch = S–Te) by reactive solid-phase epitaxy

2004 ◽  
Vol 19 (7) ◽  
pp. 2137-2143 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Kazushige Ueda ◽  
Kouhei Takafuji ◽  
Hiromichi Ohta ◽  
Masahiro Hirano ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Epitaxial Films ◽  
Annealing Process ◽  
Epitaxial Thin Films ◽  
Solid Phase Epitaxy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Preparation Conditions ◽  
Thermal Annealing Process

Processes and preparation conditions for growing epitaxial thin films of Cu-based, layered oxychalcogenides LnCuOCh (Ln = La, Ce, Pr or Nd; Ch = S1-xSex or Se1-yTey) are reported. Epitaxial thin films on MgO (001) substrates were prepared by a reactive solid-phase epitaxy method. Four-axes high-resolution x-ray diffraction measurements revealed that the crystallographic orientation is (001)[110] LnCuOCh || (001)[110] MgO and the internal stress of the crystalline lattices in the films are relaxed during thermal-annealing process of the reactive solid-phase epitaxy. Furthermore, except for CeCuOS, systematic variations in the lattice constant by chalcogen or lanthanide ion substitutions were observed. These results demonstrated that the reactive solid-phase epitaxy is an efficient technique for fabricating LnCuOCh epitaxial films.

Epitaxial growth of PbTiO3 thin films on {100} SrTiO3 from solution precursors

1994 ◽  
Vol 52 ◽  
pp. 576-577
Author(s):  
Andreas Seifert
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Single Phase ◽  
Amorphous Solid ◽  
Epitaxial Films ◽  
Gravimetric Analysis ◽  
Layer Formation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Solid Film

A mixed Pb-Ti-alkoxide liquid precursor, prepared from lead acetate and titanium iso-propoxide was used to form single crystal PbTiO3 thin films epitaxially on {100} SrTiO3 substrates.A gravimetric analysis of the precursor determined its molarity to 0.55 mol/1 and was carried out by drying the alkoxide overnight and heating it to 600° C for one hour. X-ray diffraction showed the resulting PbTiO3 powder to be single phase perovskite. PbTiO3 thin films were formed by spincoating previously annealed (1400°C, 2h) single crystal SrTiO3 substrates. During this process the precursor dries to a gel-like amorphous solid film that pyrolizes and crystallizes to the oxide during heat-treatment. XRD, SEM, TEM and AFM were used to characterize the progress of the epitaxial layer formation as well as the microstructural evolution of films heated at increasing temperatures, ranging from 400°C to 800°C. For XRD Θ-2Θ scans on PbTiO3 thin films heated at temperatures of 450°C and above, only the {00l} tetragonal PbTiO3 reflections (CPTO=0.4153 nm) could be observed, indicating strongly oriented or epitaxial films ({h00} of PbTiO3 (aPTO=0.3899 nm) is masked by (MX)} of the SrTiO3 substrate (aSTO=0.3904 nm)).

Fabrication,Transport and Raman Studies of Pulsed Laser Deposited Al/Ga Doped PBCO Thin Films

2009 ◽  
Vol 1222 ◽  
Author(s):  
Hom R Kandel ◽  
Tar-Pin Chen ◽  
Hye-Won Seo ◽  
Milko Iliev ◽  
Paritosh Wadekar ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Micro Raman Spectroscopy ◽  
Atomic Force ◽  
Second Phases ◽  
Krf Excimer Laser

AbstractWe have fabricated highly resistive materials PrBa2 (Cu1-xMx) 3O7 (M=Al, Ga, x = 0.20) by doping metals Ga and Al on PrBa2Cu3O7(PBCO). X-ray data indicated no significant second phases in substituting Cu by Al or Ga up to 20%.The electrical resistivity of these materials were three to four orders in magnitude higher than PBCO at 200K, which may give an effective potential barrier to YBCO in high Tc S-I-S Josephson junction. Epitaxial thin films of these materials were grown using KrF excimer laser on LAO (110) single crystal substrates. X-ray diffraction (XRD) and atomic force microscopy (AFM) were deployed to study the crystal orientation, epitaxy and roughness of the single crystal thin films. Micro Raman spectroscopy was carried out to investigate the dopant site in PBCO.

Spontaneous Transformations in the Solid State: Towards Porous and Biphasic Materials

2006 ◽  
Vol 988 ◽  
Author(s):  
Eric S. Toberer ◽  
Ram Seshadri
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solid State ◽  
Single Crystal ◽  
Crystal Lattice ◽  
Film Growth ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
Epitaxial Relationship ◽  
X Ray

AbstractEpitaxial thin films of Mn3O4 and ZnMn2O4 have been grown hydrothermally on (100) and (111) MgAl2O4 substrates. Film growth was characterized as a function of pH, concentration, and time and thin film X-ray diffraction revealed that the resulting films are an epitaxial continuation of the underlying spinel lattice. Reduction of these films to MnO occurred topotactically and in the case of ZnMn2O4, resulted in mesopores aligned along the <100> directions. As the films maintain an epitaxial relationship with the substrate, the mesopores are aligned macroscopically within a single crystal lattice.

scholarly journals Single-Crystal-like Structure of Poly(9,9-dioctylfluorene) Thin Films Evaluated by Synchrotron-Sourced Grazing-Incidence X-ray Diffraction

2007 ◽  
Vol 39 (12) ◽  
pp. 1306-1311 ◽  
Author(s):  
Masahiro Misaki ◽  
Shuichi Nagamatsu ◽  
Masayuki Chikamatsu ◽  
Yuji Yoshida ◽  
Reiko Azumi ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray

Convergent-beam parallel detection x-ray diffraction system for characterizing combinatorial epitaxial thin films

2000 ◽  
Author(s):  
Kazuhiko Omote ◽  
T. Kikuchi ◽  
J. Harada ◽  
Masashi Kawasaki ◽  
Akira Ohtomo ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Parallel Detection ◽  
Convergent Beam

REALIZATION AND CHARACTERIZATION OF e-BEAM COMPLETELY EVAPORATED BSCCO THIN FILMS

1991 ◽  
Vol 05 (18) ◽  
pp. 1203-1211 ◽  
Author(s):  
C. ATTANASIO ◽  
L. MARITATO ◽  
A. NIGRO ◽  
S. PRISHEPA ◽  
R. SCAFURO
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Single Crystal ◽  
Critical Current ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
Reliable Technique ◽  
X Ray ◽  
Eds Analysis

BSCCO thin films with T c (R = 0) higher than 80 K have been routinely prepared using a simple and reliable technique in which we completely electron beam evaporated weighted amounts of bulk pellets. The films were grown on MgO single crystal (100) substrates and showed, after an ex-situ annealing at high temperatures (840–880° C) for several hours, a strong preferential orientation with the c-axis perpendicular to the plane of the substrate. The films were characterized by Θ − 2Θ X-ray diffraction and EDS analysis and by paraconductivity and critical current measurements.

scholarly journals Effect of neodymium doping on structural, microscopic and electrical properties of barium phosphate system

2014 ◽  
Vol 04 (02) ◽  
pp. 1450007 ◽  
Author(s):  
Shivani Suri ◽  
Vishal Singh ◽  
K. K. Bamzai
Keyword(s):  
Electrical Properties ◽  
Single Crystal ◽  
Stoichiometric Composition ◽  
Solution Technique ◽  
X Ray Diffraction ◽  
X Ray ◽  
Different Temperatures ◽  
Temperature Solution ◽  
Flower Type ◽  
Phosphate System

Neodymium-doped barium phosphate (NdBP) was prepared as single crystal by room temperature solution technique known as gel encapsulation technique. Single crystal X-ray diffraction shows that the crystal belongs to orthorhombic system. The flower type morphology was observed by scanning electron microscope (SEM) and the stoichiometric composition of the prepared crystal was observed by energy dispersive X-ray analysis (EDAX). The presence of functional group and other groups was studied by Fourier transform infrared spectroscopy (FTIR). The electrical properties of these materials like dielectric constant (ε′), dielectric loss (tanδ) and ac conductivity [ln(σac)] was studied at different temperatures ranging from 40°C to 420°C in the frequency range of 5 kHz to 1 MHz. The activation energy values decreases with increase in frequency suggesting that the conduction mechanism is because of hopping of charge carriers.

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