Magnetic Anisotropy in Electrodeposited CO Films and spin-valves on Gaas Substrates

1999 ◽  
Vol 562 ◽  
Author(s):  
K. Attenborough ◽  
M. Cerisier ◽  
H. Boeve ◽  
J. De Boeck ◽  
G. Borghs ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Buffer Layer ◽  
Structural Properties ◽  
Easy Axis ◽  
Spin Valve ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cu Films ◽  
Gaas Substrates ◽  
Unique Spin

ABSTRACTWe have studied the magnetic and structural properties of thin electrodeposited Co and Cu layers grown directly onto (100) n-GaAs and have investigated the influence of a buffer layer. A dominant fourfold anisotropy with a uniaxial contribution is observed in 10 nm Co electrodeposited films on GaAs. An easy axis is observed in the [001] GaAs direction with two hard axes of differing coercivities parallel to the [011] and [011] directions. For thicker films the easy axes in the [001] direction becomes less pronounced and the fourfold anisotropy becomes less dominant. Co films of similar thicknesses deposited onto an electrodeposited Cu buffer layer were nearly isotropic. From X-ray diffraction 21 nm Co layers on GaAs were found to be hcp with the c-axis tending to be in the plane of the film. The anisotropy is ascribed to the Co/GaAs interface and is held responsible for the unique spin-valve properties seen recently in electrodeposited Co/Cu films.

2D Magnetic Texture Analysis of Co–Cu Films

2017 ◽  
Vol 72 (5) ◽  
pp. 449-455 ◽  
Author(s):  
Mehmet Bayirli ◽  
Oznur Karaagac ◽  
Hakan Kockar ◽  
Mursel Alper
Keyword(s):  
Fourier Series ◽  
Texture Analysis ◽  
Easy Axis ◽  
Hysteresis Loops ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
Magnetic Texture ◽  
X Ray ◽  
Cu Films ◽  
Magnetic Easy Axis

AbstractThe magnetic textures for the produced magnetic materials are important concepts in accordance with technical applications. Therefore, the aim of this article is to determine 2D magnetic textures of electrodeposited Co–Cu films by the measurement of hysteresis loops at the incremented angles. For that, Co–Cu films were deposited with different Co2+ in the electrolyte. In addition, the easy-axis orientation in the films from the squareness values of the angles, Mp(β) obtained by the hysteresis loops have been numerically studied using the Fourier series analysis. The differences observed in the magnetic easy-axis distributions were attributed to changes of the incorporation of Co in the films with the change of Co2+ in the electrolyte. The coefficients of Fourier series (A0 and A2n ) were also computed for 2D films. It is seen that a systematic and small decrease in A0 and an obvious decrease in A2n (n=1) were observed with increasing incorporated Co in the films. Results imply that interactions cause slightly demagnetization effect accordance with higher incorporation of Co in the films. Furthermore, the crystal structure of the Co–Cu films analysed by X-ray diffraction revealed that the films have dominantly face-centred cubic structure. Film contents analysed by energy-dispersive X-ray spectroscopy and film morphologies observed by scanning electron microscope also support the magnetic texture analysis results found by numerical computation.

Effect of Co Seed Layers on the Magnetic Anisotropy of Au/Co Metallic Multilayers

2001 ◽  
Vol 697 ◽  
Author(s):  
Masao Kamiko ◽  
Hiroyuki Mizuno ◽  
Guang-Hong Lu ◽  
Yao-Min Zhou ◽  
Ryoichi Yamamoto
Keyword(s):  
Magnetic Anisotropy ◽  
Buffer Layer ◽  
Seed Layer ◽  
Large Fraction ◽  
High Energy ◽  
Structural Quality ◽  
X Ray Diffraction ◽  
Magnetic Anisotropy Energy ◽  
X Ray

AbstractAu/Co(111) multilayers and a Au buffer layer were grown by MBE on Al2O3(0001) substrates using a thin Co seed layer. The influence of the Co layer on the structure of the Au/Co multilayers was studied by X-ray diffraction and reflection high-energy electron diffraction (RHEED), and compared to its effect on the magnetic anisotropy. The Au buffer layer grown on Al2O3(0001) substrates display a large fraction of (111) fiber texture, giving rise to a lack of lateral continuity in the film. The initial deposition of a few monolayers of Co onto Al2O3(0001) substrates prior to deposition of the Au buffer layer yielded (111) epitaxial films with no texture. The use of this seeded epitaxy results in a highly improved structural quality of Au/Co(111) multilayers. From the results of Low-angle X-ray diffraction and RHEED observations, we confirmed that the interfaces of Au/Co multilayers with Co seed layer are sharper than those without Co seed layer. It cleary shows that the use of Co seed layer improved the periodicity of Au/Co multilayers. The magnetic anisotropy energy of Au/Co multilayers increased by using the Co seed layer, and the high quality of structure results larger perpendicular magnetic anisotropy.

Stabilization of Thick Fcc Cobalt Layers by One Monolayer of Manganese in Co/Mn Superlattices

1998 ◽  
Vol 528 ◽  
Author(s):  
V. Pierron-Bohnes ◽  
A. Michel ◽  
J.P. Jay ◽  
P. Panissod
Keyword(s):  
Nuclear Magnetic Resonance ◽  
Magnetic Resonance ◽  
Buffer Layer ◽  
Structural Properties ◽  
Face Centered Cubic ◽  
X Ray Diffraction ◽  
X Ray ◽  
The Face ◽  
Face Centered ◽  
Fcc Phase

AbstractEpitaxial Co/Mn superlattices (0.6 to 4.8 nm thick Co) have been grown on (0002) hcp Ru buffer layer on mica substrates. The face centered cubic (fcc) phase of cobalt is stabilized by the very thin manganese layer. The structural properties of these layers have been studied through x ray diffraction and nuclear magnetic resonance.

Selective oxidation of cyclopentene to glutaraldehyde by H2O2 over Nb-SBA-15

2021 ◽  
Author(s):  
yingmeng qi ◽  
Qi Han ◽  
li wu ◽  
Jun Li
Keyword(s):  
Structural Properties ◽  
Selective Oxidation ◽  
Mesoporous Materials ◽  
Hydrothermal Process ◽  
X Ray Diffraction ◽  
X Ray

A series of niobium-containing mesoporous materials Nb-SBA-15 have been prepared by sonication–impregnation and hydrothermal process. The dispersion and structural properties of niobium-containing species were systematically characterized by X-ray diffraction, scanning...

Structural properties of the guest species in diacyl peroxide/urea inclusion compounds: an X-ray diffraction investigation

1990 ◽  
Vol 431 (1882) ◽  
pp. 245-269 ◽  
Keyword(s):  
Single Crystal ◽  
Structural Properties ◽  
Inclusion Compounds ◽  
X Ray Diffraction ◽  
Channel Axis ◽  
Guest Molecules ◽  
X Ray ◽  
Urea Inclusion Compounds ◽  
Diacyl Peroxide ◽  
Urea Inclusion

In this paper we report single crystal X-ray diffraction studies of urea inclusion compounds containing diacyl peroxides (dioctanoyl peroxide (OP), diundecanoyl peroxide (UP), lauroyl peroxide (LP)) as the guest component. In these inclusion compounds, the host (urea) molecules crystallize in a hexagonal structure that contains linear, parallel, non-intersecting channels (tunnels). The guest (diacyl peroxide) molecules are closely packed inside these channels with a periodic repeat distance that is incommensurate with the period of the host structure along the channel axis. Furthermore, there is pronounced inhomogeneity within the guest structure: within each single crystal, there are regions in which the guest molecules are three-dimensionally ordered, and other regions in which they are only one-dimensionally ordered (along the channel axis). Although it has not proven possible to ‘determine’ the guest structures in the conventional sense, substantial information concerning their average periodicities and their orientational relationships with respect to the host has been deduced from single crystal X-ray diffraction photographs recorded at room temperature. For OP/urea, UP/urea and LP/urea, the guest structure in the three-dimensionally ordered regions is monoclinic, and six types of domain of this monoclinic structure can be identified within each single crystal. The relative packing of diacyl peroxide molecules is the same in each domain, and the different domains are related by 60° rotation about the channel axis. For each of these inclusion compounds, the offset between the ‘heights’ of the guest molecules in adjacent channels is the same ( ca . 4.6 Å (4.6 x 10 -10 m)) within experimental error, suggesting that the relative interchannel packing of the guest molecules is controlled by a property of the diacyl peroxide group. In addition to revealing these novel structural properties, the work discussed in this paper has more general relevance concerning the measurement and interpretation of single crystal X-ray diffraction patterns that are based on more than one three-dimensionally periodic reciprocal lattice. Seven separate reciprocal lattices are required to rationalize the complete X-ray diffraction pattern from each diacyl peroxide/urea crystal studied here.

Mechanical and Structural Properties of Superhard TiAlSiN Coatings Deposited by Arc Ion Plating of Cylindrical Cathode

2014 ◽  
Vol 783-786 ◽  
pp. 1426-1431
Author(s):  
Wang Ryeol Kim ◽  
Min Chul Kwon ◽  
Jung Hoon Lee ◽  
Uoo Chang Jung ◽  
Won Sub Chung
Keyword(s):  
Structural Properties ◽  
Nitrogen Pressure ◽  
Structural Features ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Plating ◽  
Arc Current ◽  
Cathode Arc ◽  
Cathodic Arc ◽  
Tialsin Coating

TiAlSiN coatings were deposited on WC-Co metal by using a cathodic arc ion deposition method of cylindrical cathode. We used Ti / Al (50 / 50 at.%) arc target and silicon sputter target. The influence of the nitrogen pressure, TiAl cathode arc current, bias voltage, and deposition temperature on the mechanical and the structural properties of the films were investigated. The structural features of the films were investigation in detail using X-ray diffraction. And coatings were characterized by means of FE-SEM, nanoindentation, Scratch tester, Tribology tester, XRD and XPS. The hardness of the film reached 43 GPa at the cathode arc current of 230 A and decreased with a further increase of the arc current. And the adhesion of the film reached 34 N. The results showed that the TiAlSiN coating exhibited an excellent mechanical properties which application for tools and molds.

A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Gan

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

The Microstructure and Electrical Property of Porous Cu Film on Soft PVDF Substrate

2012 ◽  
Vol 472-475 ◽  
pp. 1451-1454
Author(s):  
Xue Hui Wang ◽  
Wu Tang ◽  
Ji Jun Yang
Keyword(s):  
Electrical Properties ◽  
Film Surface ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Cu Films ◽  
Cu Film ◽  
Diffraction Peaks ◽  
Sputtering Pressure ◽  
Effect Method

The porous Cu film was deposited on soft PVDF substrate by magnetron sputtering at different sputtering pressure. The microstructure and electrical properties of Cu films were investigated as a function of sputtering pressure by X-ray diffraction XRD and Hall effect method. The results show that the surface morphology of Cu film is porous, and the XRD revealed that there are Cu diffraction peaks with highly textured having a Cu-(220) or a mixture of Cu-(111) and Cu-(220) at sputtering pressure 0.5 Pa. The electrical properties are also severely influenced by sputtering pressure, the resistivity of the porous Cu film is much larger than that fabricated on Si substrate. Furthermore, the resistivity increases simultaneously with the increasing of Cu film surface aperture, but the resistivity of Cu film still decreases with the increasing grain size. It can be concluded that the crystal structure is still the most important factor for the porous Cu film resistivity.

Crystallization of Zn-rich and P-rich amorphous Zn3P2 thin films

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Structural Properties ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Conductivity Activation Energy ◽  
X Ray

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

Synchrotron x‐ray diffraction studies of the structural properties of electrode materials in operating battery cells

1996 ◽  
Vol 69 (2) ◽  
pp. 194-196 ◽  
Author(s):  
T. R. Thurston ◽  
N. M. Jisrawi ◽  
S. Mukerjee ◽  
X. Q. Yang ◽  
J. McBreen ◽  
...  
Keyword(s):  
Structural Properties ◽  
Electrode Materials ◽  
X Ray Diffraction ◽  
X Ray ◽  
Battery Cells
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