scholarly journals On the Influence of Applied Fields on Spinel Formation

1999 ◽  
Vol 586 ◽  
Author(s):  
C. Korte ◽  
J. K. Farrer ◽  
N. Ravishankar ◽  
J. R. Michael ◽  
H. Schmalzried ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscope ◽  
Solid State ◽  
Electric Fields ◽  
Phase Boundaries ◽  
Electron Backscattered Diffraction ◽  
Backscattered Electron ◽  
Applied Fields ◽  
Mgo Substrate ◽  
Scanning Electron

ABSTRACTInterfaces play an important role in determining the effect of electric fields on the mechanism of the formation of spinel by solid-state reaction. The reaction occurs by the movement of phase boundaries but the rate of this movement can be affected by grain boundaries in the reactants or in the reaction product. Only by understanding these relationships will it be possible to engineer their behavior. As a particular example of such a study, Mgln2O4 can be formed by the reaction between single-crystal MgO substrate and a thin film of In2O3with or without an applied electric field. High-resolution backscattered electron (BSE) imaging and electron backscattered diffraction (EBSD) in a scanning electron microscope (SEM) has been used to obtain complementary chemical and crystallographic information.

Microdiffraction phase identification in the scanning electron microscope (SEM)

2004 ◽  
Vol 19 (2) ◽  
pp. 100-103 ◽  
Author(s):  
R. P. Goehner ◽  
J. R. Michael
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Beam Current ◽  
Electron Diffraction Data ◽  
Specimen Preparation ◽  
Phase Identification ◽  
Electron Backscattered Diffraction ◽  
Backscattered Electron ◽  
Ccd Detectors ◽  
Scanning Electron

The identification of crystallographic phases in the scanning electron microscope (SEM) has been limited by the lack of a simple way to obtain electron diffraction data of an unknown while observing the microstructure of the specimen. With the development of charge coupled device (CCD)-based detectors, backscattered electron Kikuchi patterns, alternately referred to as electron backscattered diffraction (EBSD) patterns, can be easily collected. Previously, EBSD has been limited to crystallographic orientation studies due to the poor pattern quality collected with video rate detector systems. With CCD detectors, a typical EBSD can now be acquired from a micron or submicron sized crystal using an exposure time of 1–10 s with an accelerating voltage of 10–40 kV and a beam current as low as 0.1 nA. Crystallographic phase analysis using EBSD is unique in that the properly equipped SEM permits high magnification images, EBSDs, and elemental information to be collected from bulk specimens. EBSD in the SEM has numerous advantages over other electron beam-based crystallographic techniques. The large angular view (∼70°) provided by EBSD and the ease of specimen preparation are distinct advantages of the technique. No sample preparation beyond what is commonly used for SEM specimens is required for EBSD.

The Photoluminescence Spectra Research of SiC Thin Film under Different Sputtering Powers

2019 ◽  
Vol 295 ◽  
pp. 93-97
Author(s):  
Chang Zhao ◽  
Man Zhao ◽  
Su Ye Lv ◽  
Qing Jun Liu ◽  
Guang Jian Xing
Keyword(s):  
Thin Film ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Crystal Morphology ◽  
Growth Conditions ◽  
Photoluminescence Spectra ◽  
Experimental Conditions ◽  
Grain Sizes ◽  
Power Inputs ◽  
Scanning Electron

This study prepared an SiC thin film by using the ratio frequency magnetron sputtering method, investigated the effects of different sputtering powers on the SiC material and analysed the changes in crystal morphology and photoluminescence characteristics caused by changes in the growth conditions used. It was considered that there was 6H-SiC crystal morphologies in the SiC thin film under the experimental conditions prevailing in this study. The SiC morphologies with small grain sizes intermingled and therefore formed anSiC thin film. The analyses of the photoluminescence spectra and Scanning Electron Microscope indicated that the SiC thin film materials with preferable crystal compositions could be prepared under appropriate power inputs.

Research and Application of S-4800 Scanning Electron Microscope in Modern Testing and Analysis Technology

2014 ◽  
Vol 668-669 ◽  
pp. 936-939
Author(s):  
Quan Wen ◽  
Zhao Yang Ding ◽  
Fu Sheng Kou ◽  
Peng Zhou
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Secondary Electron ◽  
Forming Mechanism ◽  
Main Application ◽  
Signal Transformation ◽  
Backscattered Electron ◽  
Application Fields ◽  
Scanning Electron

Mechanism and functions of S-4800 Scanning Electron Microscope are introduced in this paper. The image-forming mechanism and structure of SEM are studied, and the signal transformation of secondary electron and backscattered electron is presented. The main application fields of SEM are researched.

The formation of copper aluminate by solid-state reaction

1991 ◽  
Vol 6 (9) ◽  
pp. 1958-1963 ◽  
Author(s):  
David W. Susnitzky ◽  
C. Barry Carter
Keyword(s):  
Solid State ◽  
Single Crystal ◽  
Microprobe Analysis ◽  
Electron Microprobe Analysis ◽  
Substrate Surface ◽  
Alumina Substrate ◽  
Solid State Reactions ◽  
Phase Boundaries ◽  
Copper Aluminate ◽  
Scanning Electron

Solid-state reactions between bulk samples of copper oxide and alumina have been studied using scanning electron microscopy and electron microprobe analysis. Both CuAl2O4 and CuAlO2 were found to form during reactions in air at 1100 °C between CuO powder and single-crystal alumina substrates. The relative position of the CuAl2O4 and CuAlO2 layers was observed to depend on the crystallographic orientation of the surface of the alumina substrate: CuAl2O4 formed in contact with (0001) alumina substrates while CuAlO2 formed when the alumina substrate surface was (110). Faceted Cu–aluminate/alumina phase boundaries were observed to develop when single-crystal alumina rods were reacted with CuO, although the interfaces invariably tended to be wavy.

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