An XPS Study of Silicon Oxynitride Rapid Thermally Grown in Nitric Oxide

1999 ◽  
Vol 592 ◽  
Author(s):  
W. H. Lai ◽  
M. F. Li ◽  
J. S. Pan ◽  
R. Liu ◽  
L. Chan ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
Growth Rate ◽  
Measurement Uncertainty ◽  
Thermal Processing ◽  
State Of The Art ◽  
Rapid Thermal Processing ◽  
Growth Characteristics ◽  
Silicon Oxynitride ◽  
Temperature And Pressure ◽  
Xps Study

ABSTRACTEarlier growth studies on the rapid thermal oxidation of silicon in NO (RTNO) were not sufficiently comprehensive and were limited by temperature measurement uncertainty and thermal non-uniformity across the wafer. Using a state-of-the-art rapid thermal processing (RTP) system, the RTNO growth characteristics at 100 and 760 Torr, from 900 to 1200°C and from 0 to 480 s were investigated. It was found that the initial growth rate anomalously decreasedwith temperature and pressure. These anomalies were correlated to the evolution of the XPS N 1s spectrum of the RTNO film with oxidation time, temperature and pressure.

SIMS STUDY OF SILICON OXYNITRIDE RAPID THERMALLY GROWN IN NITRIC OXIDE

2001 ◽  
Vol 08 (05) ◽  
pp. 569-573
Author(s):  
R. LIU ◽  
K. H. KOA ◽  
A. T. S. WEE ◽  
W. H. LAI ◽  
M. F. LI ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Depth Distribution ◽  
Secondary Ion Mass Spectrometry ◽  
Gate Dielectric ◽  
State Of The Art ◽  
Rapid Thermal Processing ◽  
Growth Characteristics ◽  
Silicon Oxynitride ◽  
Mos Devices ◽  
Secondary Ion

As the gate dielectric for ULSI MOS devices scales in the ultrathin regime, it is fabricated increasingly with silicon oxynitride instead of silicon dioxide films. One way to obtain silicon oxynitride films is the rapid thermal oxidation of silicon in NO (RTNO). Earlier RTNO growth studies were not sufficiently comprehensive as well as limited by temperature uncertainty and nonuniformity across the wafer. Using a state-of-the-art rapid thermal processing (RTP) system, RTNO growth characteristics at oxidation pressures of 100 and 760 Torr, oxidation temperatures from 900 to 1200°C and oxidation times from 0 to 480 s were obtained and investigated. Anomalies in the growth characteristics were observed. It was also demonstrated that secondary ion mass spectrometry (SIMS) using the MCs + method could be used to accurately determine the depth distribution of N in ultrathin silicon oxynitride films.

Silicon Oxynitride and Oxide-Nitride-Oxide Gate Dielectrics by Combined Plasma-Rapid Thermal Processing

1994 ◽  
Vol 342 ◽  
Author(s):  
Y. Ma ◽  
S.V. Hattangady ◽  
T. Yasuda ◽  
H. Niimi ◽  
S. Gandhi ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Silicon Oxide ◽  
Gate Dielectric ◽  
Rapid Thermal Processing ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Dielectric Films ◽  
Mos Capacitor ◽  
Nitride Oxide

ABSTRACTWe have used a combination of plasma and rapid thermal processing for the formation of thin gate-dielectric films. The bulk dielectric films investigated include silicon oxide, oxynitride and multilayer oxide-nitride-oxide heterostructures formed by plasma-assisted oxidation, remoteplasma-enhanced chemical-vapor deposition (remote-PECVD) followed by post-deposition rapid thermal annealing (RTA). Auger electron spectroscopy (AES) and infrared absorption spectroscopy (IR) have been used to study the chemistry of interface formation and the bulk dielectric chemical bonding, respectively. Electrical characterization of MOS capacitor structures incorporating these dielectrics was performed by conventional capacitance and current voltage techniques, C-V and I-V, respectively.

Rapid Thermal Processing Requirements for 0.35-µm IC Technologies and Beyond

1994 ◽  
Vol 342 ◽  
Author(s):  
Mehrdad M. Moslehi
Keyword(s):  
Process Control ◽  
Design Process ◽  
Thermal Processing ◽  
State Of The Art ◽  
Rapid Thermal Processing ◽  
Chemical Vapor ◽  
Unit Process ◽  
The Past ◽  
Cmos Ic ◽  
Manufacturing Science

ABSTRACTThis paper will present an overview of rapid thermal processing (RTP) technologies for fastcycle-time IC production. RTP has experienced significant advances in equipment design, process control capabilities, and unit process applications over the past eight years. The Microelectronics Manufacturing Science and Technology (MMST) program at TI successfully demonstrated CMOS IC production in a single-wafer factory with all-RTP thermal fabrication for various anneals, oxidations, and chemical-vapor depositions. The use of RTP in conjunction with other single-wafer processes enabled 0.35 µm IC fabrication with a 3-day cycle time. Selected RTP equipment, sensor, and process control developments will be reviewed. The RTP applications and requirements for state-of-the-art and future IC technologies will be described.

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