Silicon Oxynitride and Oxide-Nitride-Oxide Gate Dielectrics by Combined Plasma-Rapid Thermal Processing

1994 ◽  
Vol 342 ◽  
Author(s):  
Y. Ma ◽  
S.V. Hattangady ◽  
T. Yasuda ◽  
H. Niimi ◽  
S. Gandhi ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Silicon Oxide ◽  
Gate Dielectric ◽  
Rapid Thermal Processing ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Dielectric Films ◽  
Mos Capacitor ◽  
Nitride Oxide

ABSTRACTWe have used a combination of plasma and rapid thermal processing for the formation of thin gate-dielectric films. The bulk dielectric films investigated include silicon oxide, oxynitride and multilayer oxide-nitride-oxide heterostructures formed by plasma-assisted oxidation, remoteplasma-enhanced chemical-vapor deposition (remote-PECVD) followed by post-deposition rapid thermal annealing (RTA). Auger electron spectroscopy (AES) and infrared absorption spectroscopy (IR) have been used to study the chemistry of interface formation and the bulk dielectric chemical bonding, respectively. Electrical characterization of MOS capacitor structures incorporating these dielectrics was performed by conventional capacitance and current voltage techniques, C-V and I-V, respectively.

Integrated Processing of Silicon Oxynitride Alloy Dielectrics by Plasma-Assisted Oxidation, Chemical Vapor Deposition, and On-Line Rapid Thermal Annealing

1995 ◽  
Vol 387 ◽  
Author(s):  
S. V. Hattangady ◽  
H. Niimi ◽  
S. Gandhi ◽  
G. Lucovsky
Keyword(s):  
Gate Dielectric ◽  
Processing System ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Budget Process ◽  
Rapid Thermal Anneal ◽  
Mos Capacitors ◽  
On Line ◽  
Thin Film Dielectrics

AbstractThin film dielectrics have been prepared in a cluster processing system with chambers for plasma-assisted, rapid-thermal processing, and on-line Auger electron spectroscopy (AES). A low-thermal budget process for the formation of homogeneous silicon oxynitride (OXN) alloy films is presented. This Na2-based plasma-CVD process has (i) increased process latitude for the formation of N-rich alloys, and (ii) results in lower bonded-H concentrations, in comparison with a similar NH3-based process. Gate dielectric formation consists of (i) a 300°C plasma-assisted oxidation for removal of residual hydrocarbons, and formation of an Si-SiO2 interface protected by ∼0.5-0.6 nm of oxide, (ii) a 300°C plasma-assisted CVD of oxynitride films from N2O, N2, and SiH4, and (iii) a 30 s, 900°C post-deposition rapid-thermal anneal in an ambient that contains sufficient oxygen to prevent decomposition of the Si/SiO2 interface. On-line AES and off-line infrared (IR) spectroscopy have been used to characterize chemical bonding, showing that the deposited films are pseudo-binary alloys lying on a join-line from SiO2 and Si3N4 in a ternary composition diagram. Electrical characterization of MOS capacitors, consisting of O-OXN-O structures, using C-V techniques is discussed.

scholarly journals Photo- and electroluminescence of oxide-nitride-oxide-silicon structures for silicon-based optoelectronics

2018 ◽  
Vol 62 (5) ◽  
pp. 546-554
Author(s):  
I. A. Romanov ◽  
L. A. Vlasukova ◽  
F. F. Komarov ◽  
I. N. Parkhomenko ◽  
N. S. Kovalchuk ◽  
...  
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Silicon Oxide ◽  
Light Emission ◽  
Chemical Vapor ◽  
Nitride Layer ◽  
Silicon Oxynitride ◽  
Radiative Relaxation ◽  
A Charge ◽  
Nitride Oxide

Oxide-nitride-oxide-silicon (SiO2/SiN0.9/SiO2/Si) structures have been fabricated by chemical vapor deposition. The elemental composition and light emission properties of “SiO2/SiN0.9/SiO2/Si” structures have been studied using Rutherford backscattering spectroscopy (RBS), photo- and electroluminescence (Pl, El). The RBS measurements has shown the presence of an intermediate silicon oxynitride layers at the SiO2–SiN0.9 interfaces.It has been shown that the photoluminescence of the SiO2/SiN0.9/SiO2/Si structure is due to the emission of a SiN0.9 layer, and the electroluminescence is attributed to the emission of silicon oxide and oxynitride layers. A broad intense band with a maximum at 1.9 eV dominates the Pl spectrum. This band attributed to the radiative recombination of excited carriers between the band tail states of the SiN0.9 layer. The origin of the less intense Pl band at 2.8 eV is associated with the presence  of nitrogen defects in the silicon nitride.El was excited in the electrolyte-dielectric-semiconductor system. The electric field strength in the SiO2 layers reached 7–8 MV/cm and exceeded this parameter in nitride layer nearly four times. The electrons accelerating in electric field of 7–8 MV/cm could heat up to energies more than 5 eV. It is sufficient for the excitation of luminescence centres in the silicon oxide and oxynitride layers. The SiO2/SiN0.9/SiO2/Si composition El bands with quantum energies of 1.9 and 2.3 eV are related to the presence of silanol groups (Si–OH) and three-coordinated silicon atoms (≡Si•) in the silicon oxide layers. The El band with an energy of 2.7 eV is attributed to the radiative relaxation of silylene (O2=Si:) centers in the silicon oxynitride regions. It is observed the least reduction of this band intensity under the influence of strong electric fields after a charge flow  of 1–3 C/cm2.

SIMS STUDY OF SILICON OXYNITRIDE RAPID THERMALLY GROWN IN NITRIC OXIDE

2001 ◽  
Vol 08 (05) ◽  
pp. 569-573
Author(s):  
R. LIU ◽  
K. H. KOA ◽  
A. T. S. WEE ◽  
W. H. LAI ◽  
M. F. LI ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Depth Distribution ◽  
Secondary Ion Mass Spectrometry ◽  
Gate Dielectric ◽  
State Of The Art ◽  
Rapid Thermal Processing ◽  
Growth Characteristics ◽  
Silicon Oxynitride ◽  
Mos Devices ◽  
Secondary Ion

As the gate dielectric for ULSI MOS devices scales in the ultrathin regime, it is fabricated increasingly with silicon oxynitride instead of silicon dioxide films. One way to obtain silicon oxynitride films is the rapid thermal oxidation of silicon in NO (RTNO). Earlier RTNO growth studies were not sufficiently comprehensive as well as limited by temperature uncertainty and nonuniformity across the wafer. Using a state-of-the-art rapid thermal processing (RTP) system, RTNO growth characteristics at oxidation pressures of 100 and 760 Torr, oxidation temperatures from 900 to 1200°C and oxidation times from 0 to 480 s were obtained and investigated. Anomalies in the growth characteristics were observed. It was also demonstrated that secondary ion mass spectrometry (SIMS) using the MCs + method could be used to accurately determine the depth distribution of N in ultrathin silicon oxynitride films.

Sub-Nanometric Resolution Depth Profiling of Ultrathin Ono Structures

1999 ◽  
Vol 567 ◽  
Author(s):  
C. Radtke ◽  
T.D.M. Salgado ◽  
C. Krug ◽  
J. de Andrade ◽  
I.J.R. Baumvol
Keyword(s):  
Silicon Oxide ◽  
Depth Profiling ◽  
Chemical Vapor ◽  
Nitride Layer ◽  
Silicon Oxynitride ◽  
Nuclear Reaction Analysis ◽  
Near Surface ◽  
Atomic Transport ◽  
Thermal Growth ◽  
Nitride Oxide

ABSTRACTUltrathin silicon oxide/nitride/oxide films on silicon prepared by the usual route -thermal growth of an oxide followed by deposition of a nitride layer by chemical vapor deposition, and finally a reoxidation step - were characterized using isotopic substitution of N and O and depth profiling with sub-nanometric resolution. The redistribution of N and O during the oxide/nitride/oxide film processing was investigated by: i) 15N and 18O depth profiling by means of narrow nuclear resonance, and ii) 16O profiling using step-by-step chemical dissolution associated with areal densities determinations by nuclear reaction analysis. It was observed that the reoxidation step, here performed varying temperature and time, induces atomic transport of O and N thus resulting in oxide/nitride/oxide structures which are not stacked layered ones, but rather silicon oxynitride ultrathin films, in which the N concentration presents a maximum in the bulk and is moderate in the near-surface and near-interface regions.

Rapid Thermal Processing of Gate Dielectric Films and their Characterization

1987 ◽  
Vol 92 ◽  
Author(s):  
D. L. Flowers ◽  
J. Nulman ◽  
J. P. Krusius
Keyword(s):  
Integrated Circuits ◽  
Thermal Processing ◽  
Gate Dielectric ◽  
Defect Density ◽  
Rapid Thermal Processing ◽  
Dielectric Films ◽  
Mobile Charge ◽  
High Quality ◽  
Temperature Constraint ◽  
Low Levels

ABSTRACTRapid thermal processing has been used to grow high quality, low defect density, low mobile charge, dielectric films of oxide and nitrided oxide. Suitable annealing can lower the fixed charge and interfacial trap density present in these filmsto acceptably low levels. Both RTA and RTN were shown to improve the dielectric properties of the grown oxides. These filmsshould be strong candidates for use in high density, shallow junction, integrated circuits where a minimal time/temperature constraint is imposed on further processing after diffusion.

Thickness-dependent Structural Relaxation of Plasma-Enhanced Chemical Vapor Deposited Silicon Oxide Films during Thermal Processing

2004 ◽  
Vol 854 ◽  
Author(s):  
Zhiqiang Cao ◽  
Xin Zhang
Keyword(s):  
Thermal Processing ◽  
Microelectromechanical Systems ◽  
Silicon Oxide ◽  
Coefficient Of Thermal Expansion ◽  
Chemical Vapor ◽  
Thickness Effect ◽  
Dielectric Films ◽  
Chemical Vapor Deposited ◽  
Amorphous Dielectric ◽  
Stress Hysteresis

ABSTRACTThis paper presents a microstructure-based mechanism which elucidates seams as a source of density change and voids as a source of plastic deformation, accompanied by a viscous flow. This theory was then applied to explain a series of experimental results that are related to thermal cycling of amorphous dielectric films, such as plasma-enhanced physical vapor deposited (PECVD) silicon oxide (SiOx) films, including stress hysteresis generation and reduction and coefficient of thermal-expansion changes. In particular, the thickness effect was examined; PECVD SiOx films with a thickness varying from 1 to 40 m were studied, as certain demanding applications in Microelectromechanical Systems (MEMS) require such thick films serving as heat/electrical insulation layers.

Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices

2006 ◽  
Vol 37 (1) ◽  
pp. 64-70 ◽  
Author(s):  
A. Szekeres ◽  
T. Nikolova ◽  
S. Simeonov ◽  
A. Gushterov ◽  
F. Hamelmann ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Mos Devices ◽  
Chemical Vapor Deposited ◽  
Alternative Material
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