Investigation of the Structural and Microstructural Characteristics of Sol-Gel Derived Lead Lanthanum Titanate Thin Films

1999 ◽  
Vol 596 ◽  
Author(s):  
S. B. Majumder ◽  
S. Bhaskar ◽  
P. S. Dobal ◽  
A. L. Morales. Cruz ◽  
R. S. Katiyar
Keyword(s):  
Thin Films ◽  
Acetic Acid ◽  
Electrical Properties ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Sharp Decrease ◽  
Modified Technique ◽  
Lanthanum Titanate ◽  
La Addition ◽  
Deposited Films

AbstractIn the present work we have studied the characteristics of Pb1.05-xLaxTil-x/4O3 ( x= 0 to 30 at%) thin films prepared by acetic acid and methoxy-ethanol based sol-gel techniques. We have found that higher intermediate temperature fired films (x=0.15), prepared by acetic acid modified technique yielded (100) textured growth with improved dielectric properties. It has been argued that homogeneous mixing of the film constituents in the sol is influenced by the choice of the precursor materials and preparation methodology which in turn controls the growth characteristics and electrical properties. Lanthanum as a dopant has a pronounced influence on the structure, microstructure and electrical properties of the deposited films. In the Raman spectra, the soft E(1TO) phonon shifts towards the lower frequency with a sharp decrease in its intensity and a tetragonal to cubic structural transformation (for 26.5 at % La) was observed at room temperature. In the ferroelectric composition range (up to 15 at % La doping), we have observed a significant improvement of ferroelectric properties with the La addition.

Enhanced Electrical properties in Mn-doped Bi3.25La0.75Ti3O12 thin films

2005 ◽  
Vol 902 ◽  
Author(s):  
Sushil Kumar Singh ◽  
Hiroshi Ishiwara
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Switching Field ◽  
Mn Doping ◽  
Mn Doped

AbstractMn-doped Bi3.25La0.75Ti3O12 (BLT) thin films were fabricated by depositing sol-gel solutions on Pt/Ti/SiO2/Si <100> substrates. The surface morphology and ferroelectric properties of Mn-doped BLT films depend upon the orientation of the films. Small amount of Mn-doping in BLT films influences the ferroelectric properties of the films, that is, it enhances the remanent polarization and reduces the coercive field. The 1% Mn-doped BLT films show enhanced remanent polarization and reduced the coercive field by about 22%. To the contrary, Mn-doping more than 1% decreases polarization gradually. Mn-doping significantly improves the fatigue resistance of BLT films. The reduced polarization in the 3.3% Mn-doped thin film recovers during switching cycles higher than 5 × 105. Under high switching field, the probability of field-assisted unpinning of domains is expected to be high and this may be the main cause for increase in polarization after 5 × 105 in the 3.3% Mn-doped BLT film.

Preparation and Properties of ferroelectric Bi2SrTa2O9 thin films for FeRAM using Flash-MOCVD

1995 ◽  
Vol 415 ◽  
Author(s):  
T. Ami ◽  
K. Hironaka ◽  
C. Isobel ◽  
N. Nagel ◽  
M. Sugiyama ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Type Structure ◽  
Structural And Electrical Properties ◽  
Fluorite Type ◽  
Deposited Films ◽  
Flowing Oxygen

ABSTRACTFerroelectric Bi2 SrTa2 O9 thin films were successfully prepared by liquid delivery MOCVD, and structural and electrical properties were investigated. As-deposited films showed sharp distinct peaks, which were indexed assuming a fluorite-type structure. These precursors were transformed to bismuth-layered structures by annealing at 800 °C in flowing oxygen. Reasonable ferroelectric properties were observed in a film with 170 nm-thickness. Remanent polarization and coercive field were estimated to be 5.2 μC/cm2 and 52 kV/cm, respectively, at 5V.

scholarly journals Robust ferroelectricity enhancement of PZT thin films by a homogeneous seed layer

2021 ◽  
Author(s):  
jie jiang ◽  
Lei Liu ◽  
Kuo Ouyang ◽  
Zhouyu Chen ◽  
Shengtao Mo ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Remanent Polarization ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Pzt Thin Films ◽  
Large Dielectric Constant ◽  
Sol Gel Process ◽  
A New Technique

Abstract With its excellent ferroelectric properties such as large dielectric constant and large remanent polarization, PZT thin films are extensively used in micro-sensors and other devices. In this study, the sol-gel process was used to fabricate Pb(Zr0.52Ti0.48)O3 thin films with Pb(ZrxTi1−x)O3 seed islands. The experimental consequences demonstrate that all the Pb(Zr0.52Ti0.48)O3 thin films with Pb(ZrxTi1−x)O3 seeds show pure perovskite phase with no other impurity phases, and the electrical properties of Pb(Zr0.52Ti0.48)O3 thin films modified by Pb(ZrxTi1−x)O3 seed islands with different Zr/Ti ratios are improved, such as remanent polarization increased, dielectric properties increased, coercive electric field decreased, leakage current density decreased, etc. In particular, the electrical properties of the Pb(Zr0.52Ti0.48)O3 thin films with Pb(ZrxTi1−x)O3 seed islands are the most optimal when the x is 0.52. This paper provides a new technique for optimizing the electrical properties of PZT thin films, which is of great significance for breaking through the bottleneck of the development of ferroelectric memory.

scholarly journals Solution Chemistry Optimization of Sol-Gel Processed Pzt Thin Films

1993 ◽  
Vol 310 ◽  
Author(s):  
Steven J. Lockwood ◽  
R. W. Schwartz ◽  
B. A. Tuitle ◽  
E. V. Thomas
Keyword(s):  
Thin Films ◽  
Acetic Acid ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Pyrochlore Phase ◽  
Solution Chemistry ◽  
Water Volume ◽  
Original Solution ◽  
Pzt Thin Films

AbstractWe have optimized the ferroelectric properties and microstructural characteristics of sol-gel PZT thin films used in a CMOS-integrated, 256 bit ferroelectric non-volatile memory. The sol-gel process utilized in our work involved the reaction of Zr n-butoxide, Ti isopropoxide, and Pb (IV) acetate in a methanol/acetic acid solvent system. A 10-factor screening experiment identified solution concentration, acetic acid addition, and water volume as the solution chemistry factors having the most significant effects on the remanent polarization, coercive field, ferroelectric loop quality, and microstruntural quality. The optimal values for these factors were determined by runnig a 3-factor uniform shell design, modelling the responses, and testing the models at the predicted optimal conditions. The optimized solution chemistry generated 3-layer, 300-400 nm thick films on RuO2 coated silicon substrates with coercive fields of less than 25 kV/cm (a 40-50 % improvement over the original solution chemistry), a remanent polarization of 25-30 μC/cm, and a reduction in the pyrochlore phase content below observable levels.

Electrical Properties of Crystalline and Amorphous Pb(ZrxTi1−x)O3 Thin Films Prepared by the Sol-Gel Technique

1992 ◽  
Vol 271 ◽  
Author(s):  
Yuhuan Xu ◽  
Chih-Hsing Cheng ◽  
Ren Xu ◽  
John D. Mackenzie
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Dip Coating ◽  
Metal Substrate ◽  
Pzt Thin Films ◽  
Heat Treated ◽  
Pzt Films ◽  
Gel Technique

ABSTRACTPb(ZrxTi1−x)O3 (PZT) solutions were prepared by reacting lead 2-ethylhexanoate with titanium n-propoxide and zirconium n-propoxide. Films were deposited on several kinds of metal substrate by dip-coating. Crystalline PZT films and amorphous PZT films were heat-treated for 1 hour at 650°C and at 400°C, respectively. Electrical properties including dielectric, pyroelectric and ferroelectric properties of both crystalline and amorphous PZT films were measured and compared. The amorphous PZT thin films exhibited ferroelectric-like behaviors.

Preparation of Pb(Zr0.52Ti0.48)O3-Ni0.5Zn0.5Fe2O4 Bilayer Thin Films and their Magnetic and Ferroelectric Properties

2012 ◽  
Vol 248 ◽  
pp. 212-217
Author(s):  
Fu Xue Yan ◽  
Gao Yang Zhao ◽  
Na Song ◽  
Yuan Qing Chen
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Electrical Properties ◽  
Composite Film ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Composite Films ◽  
Gel Method ◽  
X Ray ◽  
Vibration Sample Magnetometer

Ni0.5Zn0.5Fe2O4-Pb(Zr0.52Ti0.48)O3 (NZFO-PZT) composite films were prepared using sol–gel method on Si (100) substrate with different bilayer structures, namely, the NZFO/PZT (NP) and the PZT/NZFO (PN). Their structure, magnetic and ferroelectric properties were characterized by X-ray diffractometer (XRD), vibration sample magnetometer (VSM) and ferroelectric testing unit. Both the NP and the PN films exhibit coexistence of magnetic and ferroelectric properties. The overlapping sequence has much influence on the electrical properties. Whereas, such an overlapping structure of the films has slightly effect on its magnetic properties. The NP structured composite film is more suitable to get a promising magnetoelectric coupling.

The Effects of La Concentration on the Properties of PLT Thin Films: From the Perspective of Dram Applications

1994 ◽  
Vol 361 ◽  
Author(s):  
Seong Jun Kang ◽  
Jeong Seon Ryoo ◽  
Yung Sup Yoon
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Loss Tangent ◽  
Current Density ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Dielectric Constants ◽  
Lanthanum Titanate

ABSTRACTWe have studied the effects of La concentration on the dielectric and ferroelectric properties of lead lanthanum titanate (PLT) thin films by using sol-gel method. Both the dielectric and ferroelectric properties were greatly affected by the La concentration. The dielectric constants of the films varied from 340 to 870 with varying La concentration in the range from 15 to 33 mol%. Hysteresis loop became slimmer with the increase of La concentration from 15 to 28 mol% and a little fatter again with the increase of La concentration from 28 to 33 mol%. Among the films investigated in this research, PLT(28) thin film showed the best dielectric properties for the application to the dielectrics of ULSI DRAM's. At the frequency of 100 Hz, the dielectric constant and the loss tangent of PLT(28) thin film were 940 and 0.08, respectively. Its leakage current density at 1.5×10 V/cm was 1×10−6 A/cm2. The comparison between the simulated and the experimental curves for the switching transient characteristics showed that PLT(28) thin film behaved like normal dielectrics.

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