Photo-Assisted Mocvd Growth of High Dielectric (Ba,Sr)TiO3 Thin Films on Ni/TiN/Si Substrate for Dram Application
Keyword(s):
AbstractHigh dielectric constant barium strontium titanium oxide (BST) thin films have been deposited on Ni/TiN/Si by photo-assisted metal organic chemical vapor deposition (PhAMOCVD). Planar capacitors based on the Ni/BST/Ni/TiN/Si heterostructure with BST-layer thickness of 50nm exhibited storage densities of about 30 fF/μm2 and leakage current densities of less than 10–7 A/cm2 under bias below 1.8V at room temperature. Nickel as a bottom electrode in this newly designed capacitor structure, can be easily patterned by reactive ion etching, and satisfies the requirement for integration with silicon.
1998 ◽
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2004 ◽
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2004 ◽
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2003 ◽
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