Crystallographic Orientation in Bulk Polycrystalline Silicon Carbide Produced by a Chemical Vapor Deposition (CVD) Process

1999 ◽  
Vol 606 ◽  
Author(s):  
James V. Marzik ◽  
William J. Croft
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Crystallographic Orientation ◽  
Bulk Material ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Polycrystalline Silicon Carbide ◽  
High Degree ◽  
Microstructure Of The Material

AbstractPolycrystalline, theoretically dense silicon carbide was deposited onto graphite substrates via the reductive pyrolysis of methyltrichlorosilane in a hot-walled chemical vapor deposition (CVD) chamber. The resulting product can be considered a bulk material with deposit thicknesses in the range of 4 to 8 millimeters. The material was characterized using powder x-ray diffraction and Laue back-reflection techniques. Under the deposition conditions investigated in this study, the crystallographic orientation varied as a function of distance from the substrate. The material exhibited a high degree of randomness in proximity to the substrate, and progressively showed a higher degree of preferred crystallographic orientation as the deposit progressed. This phenomenon is correlated with the microstructure of the material as well as such mechanical properties as hardness and fracture toughness.

scholarly journals Epitaxical nucleation of polycrystalline silicon carbide during chemical vapor deposition

1993 ◽  
Vol 8 (9) ◽  
pp. 2417-2418 ◽  
Author(s):  
Brian W. Sheldon ◽  
Theodore M. Besmann ◽  
Karren L. More ◽  
Thomas S. Moss
Keyword(s):  
Electron Microscopy ◽  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Surface Layers ◽  
Reactor Configuration ◽  
Polycrystalline Silicon Carbide

Polycrystalline silicon carbide was deposited from methyltrichlorosilane in cold-walled and hot-walled reactors, on (100) SiC surface layers that were formed on (100) Si wafers. The initial stages of the process were studied by electron microscopy after relatively short deposition times. Submicron surface features nucleated with a specific crystallographic orientation with respect to the substrate, where {111} planes in the β–SiC substrate coincided with {0001} planes in the α–SiC features. These α–SiC features occurred only at twins on {111} planes of the β–SiC substrate. This demonstrates that nucleation under these conditions is controlled by defects in the substrate. Surface contamination and the reactor configuration also had substantial effects on nucleation.

Morphology of Optically Transparent Cubic Silicon Carbide Prepared by Chemical Vapor Deposition

1996 ◽  
Vol 423 ◽  
Author(s):  
Michael W. Russell ◽  
Jaime A. Freitas ◽  
James E. Butler
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nucleation Density ◽  
X Ray Diffraction ◽  
Electron Microscopies ◽  
Atomic Force ◽  
Pressure Chemical ◽  
Cubic Silicon Carbide

AbstractCrystals of cubic silicon carbide (3C-SiC) were grown in an RF-induction furnace on graphite substrates by atmospheric pressure chemical vapor deposition (APCVD) from a single precursor, methyltrichlorosilane (MTS) in hydrogen. The deposits were characterized by micro-Raman spectroscopy, x-ray diffraction, and atomic force and scanning electron microscopies. Above ˜1600°C preferential 〈110〉 growth directions were identified for the majority of the crystals. At intermediate deposition temperatures (1600–1700°C) the dominant morphology consisted of yellow prismatic crystals heavily twinned along {111 }and {111} At substrate temperatures exceeding ˜1750°C hexagonally-shaped {1111} oriented 3C-SiC platelets were formed with alternating {001 }/{ 101} edges. The dependence of nucleation density, film morphology and film orientation on deposition conditions will be discussed with emphasis on the growth of high quality single crystals of 3C-SiC.

Epitaxical nucleation of polycrystalline silicon carbide during chemical vapor deposition

1993 ◽  
Vol 8 (5) ◽  
pp. 1086-1092 ◽  
Author(s):  
Brian W. Sheldon ◽  
Theodore M. Besmann ◽  
Karren L. More ◽  
Thomas S. Moss
Keyword(s):  
Electron Microscopy ◽  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Surface Layers ◽  
Reactor Configuration ◽  
Polycrystalline Silicon Carbide

Polycrystalline silicon carbide was deposited from methyltrichlorosilane in cold-walled and hot-walled reactors, on (100) SiC surface layers that were formed on (100) Si wafers. The initial stages of the process were studied by electron microscopy after relatively short deposition times. Submicron surface features nucleated with a specific crystallographic orientation with respect to the substrate, where h111j planes in th—SiC substrate coincided with h0001j planes in the a–SiC features. These a–SiC features occurred only at twins on h111j planes of the b–SiC substrate. This demonstrates that nucleation under these conditions is controlled by defects in the substrate. Surface contamination and the reactor configuration also had substantial effects on nucleation.

scholarly journals Erratum

1993 ◽  
Vol 8 (9) ◽  
pp. 2416-2416
Author(s):  
Brian W. Sheldon ◽  
Theodore M. Besmann ◽  
Karren L. More ◽  
Thomas S. Moss
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Polycrystalline Silicon Carbide

“Epitaxical nucleation of polycrystalline silicon carbide during chemical vapor deposition” [J. Mater. Res. 8, 1086 (1993)]

Characterization of Silicon Carbide Grown on RB-SiC by Chemical Vapor Deposition

2010 ◽  
Vol 434-435 ◽  
pp. 499-501 ◽  
Author(s):  
Fan Tao Meng ◽  
Shan Yi Du ◽  
Gui Shan Tian ◽  
Yu Min Zhang
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sic Whiskers ◽  
Deposition Conditions

Silicon carbide is one of the best materials for satellite mirror and chemical vapor deposition (CVD) is an effective method of preparing SiC whiskers and films. In this paper, SiC whiskers or films were deposited on substrates of RB-SiC in an upright chemical vapor deposition furnace of Φ150mm × 450 mm with methyltrichloride silicane (MTS) as precursor gas and H2 as carrier gas under dilute gases of different H2/Ar ratio and different deposition temperature between 1050°C and 1150°C. The morphology and composition of the CVD-SiC grown on RB-SiC substrate were determined by scanning electron microscope (SEM) and X-ray diffraction (XRD) respectively. As a result, whisker-like, worm-like or ball-like SiC can be respectively obtained dependent on different deposition conditions such as H2/Ar ratio and deposition temperature, and the composition of the productions are determined as β-SiC by XRD. Furthermore, the deposition mechanisms of different morphologies of SiC are introduced.

Preparation and Characrization of Tic/C Composite Fiber by Chemical Vapor Deposition

2012 ◽  
Vol 455-456 ◽  
pp. 935-938
Author(s):  
Hai Quan Wang
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Fibers ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Composite Fiber ◽  
Composite Fibers ◽  
X Ray Diffraction ◽  
Reaction Conditions ◽  
Tic Particle ◽  
Higher Temperature

- TiC/C composite fibers were prepared by vapor phase titanizing of the regular carbon fibers via chemical vapor deposition (CVD). The carbon fibers were titanized from the surface of the fiber to the core. Scanning electron microscope (SEM) and X-ray diffraction (XRD) were applied to characterize the morphology and structure of the TiC/C composite fibers. The influences of CVD reaction conditions such as temperature and reaction time on the TiC particle size and the thickness of the deposited layer were investigated. Higher temperature and longer time resulted in the growth of bigger size of the TiC crystal particles, and the particle uniformity was also decreased.

Modeling of silicon carbide chemical vapor deposition in a vertical reactor

1999 ◽  
Vol 61-62 ◽  
pp. 172-175 ◽  
Author(s):  
A.N. Vorob’ev ◽  
Yu.E. Egorov ◽  
Yu.N. Makarov ◽  
A.I. Zhmakin ◽  
A.O. Galyukov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor
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