scholarly journals Epitaxical nucleation of polycrystalline silicon carbide during chemical vapor deposition

1993 ◽  
Vol 8 (9) ◽  
pp. 2417-2418 ◽  
Author(s):  
Brian W. Sheldon ◽  
Theodore M. Besmann ◽  
Karren L. More ◽  
Thomas S. Moss
Keyword(s):  
Electron Microscopy ◽  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Surface Layers ◽  
Reactor Configuration ◽  
Polycrystalline Silicon Carbide

Polycrystalline silicon carbide was deposited from methyltrichlorosilane in cold-walled and hot-walled reactors, on (100) SiC surface layers that were formed on (100) Si wafers. The initial stages of the process were studied by electron microscopy after relatively short deposition times. Submicron surface features nucleated with a specific crystallographic orientation with respect to the substrate, where {111} planes in the β–SiC substrate coincided with {0001} planes in the α–SiC features. These α–SiC features occurred only at twins on {111} planes of the β–SiC substrate. This demonstrates that nucleation under these conditions is controlled by defects in the substrate. Surface contamination and the reactor configuration also had substantial effects on nucleation.

Epitaxical nucleation of polycrystalline silicon carbide during chemical vapor deposition

1993 ◽  
Vol 8 (5) ◽  
pp. 1086-1092 ◽  
Author(s):  
Brian W. Sheldon ◽  
Theodore M. Besmann ◽  
Karren L. More ◽  
Thomas S. Moss
Keyword(s):  
Electron Microscopy ◽  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Surface Layers ◽  
Reactor Configuration ◽  
Polycrystalline Silicon Carbide

Polycrystalline silicon carbide was deposited from methyltrichlorosilane in cold-walled and hot-walled reactors, on (100) SiC surface layers that were formed on (100) Si wafers. The initial stages of the process were studied by electron microscopy after relatively short deposition times. Submicron surface features nucleated with a specific crystallographic orientation with respect to the substrate, where h111j planes in th—SiC substrate coincided with h0001j planes in the a–SiC features. These a–SiC features occurred only at twins on h111j planes of the b–SiC substrate. This demonstrates that nucleation under these conditions is controlled by defects in the substrate. Surface contamination and the reactor configuration also had substantial effects on nucleation.

scholarly journals Erratum

1993 ◽  
Vol 8 (9) ◽  
pp. 2416-2416
Author(s):  
Brian W. Sheldon ◽  
Theodore M. Besmann ◽  
Karren L. More ◽  
Thomas S. Moss
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Polycrystalline Silicon Carbide

“Epitaxical nucleation of polycrystalline silicon carbide during chemical vapor deposition” [J. Mater. Res. 8, 1086 (1993)]

Crystallographic Orientation in Bulk Polycrystalline Silicon Carbide Produced by a Chemical Vapor Deposition (CVD) Process

1999 ◽  
Vol 606 ◽  
Author(s):  
James V. Marzik ◽  
William J. Croft
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Crystallographic Orientation ◽  
Bulk Material ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Polycrystalline Silicon Carbide ◽  
High Degree ◽  
Microstructure Of The Material

AbstractPolycrystalline, theoretically dense silicon carbide was deposited onto graphite substrates via the reductive pyrolysis of methyltrichlorosilane in a hot-walled chemical vapor deposition (CVD) chamber. The resulting product can be considered a bulk material with deposit thicknesses in the range of 4 to 8 millimeters. The material was characterized using powder x-ray diffraction and Laue back-reflection techniques. Under the deposition conditions investigated in this study, the crystallographic orientation varied as a function of distance from the substrate. The material exhibited a high degree of randomness in proximity to the substrate, and progressively showed a higher degree of preferred crystallographic orientation as the deposit progressed. This phenomenon is correlated with the microstructure of the material as well as such mechanical properties as hardness and fracture toughness.

Synthesis of Silicon Carbide Nanotubes by Chemical Vapor Deposition

2007 ◽  
Vol 7 (2) ◽  
pp. 647-652 ◽  
Author(s):  
Zhengfang Xie ◽  
Deliang Tao ◽  
Jiqing Wang
Keyword(s):  
Electron Microscopy ◽  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Wall Structure ◽  
Outer Diameter ◽  
X Ray ◽  
Silicon Carbide Nanotubes ◽  
Gaseous Source

Silicon carbide nanotubes (SiCNTs) were directly synthesized by chemical vapor deposition (CVD) in the paper. Methyltrichlorosilane (MTS) was selected as the SiC gaseous source and, ferrocence and thiophene as the catalyst and the cocatalyst, respectively. The influences of reaction temperature, contents of catalyst and cocatalyst, and content of gaseous source on the morphologies of the products were investigated, respectively. The products were identified by high-resolution transmission electron microscopy (HRTEM), scanning electron microscopy (SEM), X-ray diffraction (XRD), and energy-dispersive X-ray (EDX), respectively. The synthesis of SiCNTs by CVD suggested a condition-dependent process. Novel SiCNTs, with 20∼80 nm in outer diameter and 15∼35 nm in inner diameter, respectively, were observed. The wall structure similar to that of carbon nanotubes was not found for the SiCNTs.

Rapid Thermal Chemical Vapor Deposition of Polycrystalline Silicon From Dichlorosilane

1990 ◽  
Vol 182 ◽  
Author(s):  
Ahmad Kermani ◽  
Kristian E. Johnsgard ◽  
Sailish Suthar ◽  
Ki-Bum Kim ◽  
Chung Lam
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Grain Size Analysis ◽  
Thermal Chemical Vapor Deposition ◽  
Poly Silicon ◽  
Polysilicon Films

AbstractRapid Thermal Chemical Vapor Deposition (RTCVD) of undoped and insitu doped polycrystalline silicon films has been accomplished in a cold-wall reactor. Dichlorosilane was used for the silicon source and AsH3 gas was used as the dopant source. Thedeposition kinetics of poly-silicon films on silicon dioxide over a range of deposition temperatures, pressures and carrier gas chemistries was studied. Both blanket and selective deposition modes were examined. The poly-silicon films were examined by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) for morphology and grain size analysis. Using X-ray diffraction technique, preferred grain orientation dependency of poly-silicon films on growth conditions was investigated. Dopant incorporation, dopant activation and oxygen content of polysilicon films were measured by secondary ion mass spectrometry (SIMS), four point probe, and spreading resistance profiling (SRP) techniques.This paper is to report the results of material characterization of polysilicon films deposited by RTCVD, and to address the applications and advantages of ‘Integrated Processing’ technology involving deposition of polysilicon.

Transmission Electron Microscopy (TEM) Specimen Preparation Technique using Focused Ion Beam (FIB): Application to Material Characterization of Chemical Vapor Deposition of Tungsten (W) and Tungsten Silicides (WSix)

1997 ◽  
Author(s):  
K. Doong ◽  
J.-M. Fu ◽  
Y.-C. Huang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Transmission Electron

Abstract The specimen preparation technique using focused ion beam (FIB) to generate cross-sectional transmission electron microscopy (XTEM) samples of chemical vapor deposition (CVD) of Tungsten-plug (W-plug) and Tungsten Silicides (WSix) was studied. Using the combination method including two axes tilting[l], gas enhanced focused ion beam milling[2] and sacrificial metal coating on both sides of electron transmission membrane[3], it was possible to prepare a sample with minimal thickness (less than 1000 A) to get high spatial resolution in TEM observation. Based on this novel thinning technique, some applications such as XTEM observation of W-plug with different aspect ratio (I - 6), and the grain structure of CVD W-plug and CVD WSix were done. Also the problems and artifacts of XTEM sample preparation of high Z-factor material such as CVD W-plug and CVD WSix were given and the ways to avoid or minimize them were suggested.

scholarly journals Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 237
Author(s):  
M. Abul Hossion ◽  
B. M. Arora
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Deposition Technique ◽  
Boron Doped ◽  
Vapor Deposition Technique ◽  
Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

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