scholarly journals Erratum

1993 ◽  
Vol 8 (9) ◽  
pp. 2416-2416
Author(s):  
Brian W. Sheldon ◽  
Theodore M. Besmann ◽  
Karren L. More ◽  
Thomas S. Moss
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Polycrystalline Silicon Carbide

“Epitaxical nucleation of polycrystalline silicon carbide during chemical vapor deposition” [J. Mater. Res. 8, 1086 (1993)]

scholarly journals Epitaxical nucleation of polycrystalline silicon carbide during chemical vapor deposition

1993 ◽  
Vol 8 (9) ◽  
pp. 2417-2418 ◽  
Author(s):  
Brian W. Sheldon ◽  
Theodore M. Besmann ◽  
Karren L. More ◽  
Thomas S. Moss
Keyword(s):  
Electron Microscopy ◽  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Surface Layers ◽  
Reactor Configuration ◽  
Polycrystalline Silicon Carbide

Polycrystalline silicon carbide was deposited from methyltrichlorosilane in cold-walled and hot-walled reactors, on (100) SiC surface layers that were formed on (100) Si wafers. The initial stages of the process were studied by electron microscopy after relatively short deposition times. Submicron surface features nucleated with a specific crystallographic orientation with respect to the substrate, where {111} planes in the β–SiC substrate coincided with {0001} planes in the α–SiC features. These α–SiC features occurred only at twins on {111} planes of the β–SiC substrate. This demonstrates that nucleation under these conditions is controlled by defects in the substrate. Surface contamination and the reactor configuration also had substantial effects on nucleation.

Epitaxical nucleation of polycrystalline silicon carbide during chemical vapor deposition

1993 ◽  
Vol 8 (5) ◽  
pp. 1086-1092 ◽  
Author(s):  
Brian W. Sheldon ◽  
Theodore M. Besmann ◽  
Karren L. More ◽  
Thomas S. Moss
Keyword(s):  
Electron Microscopy ◽  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Surface Layers ◽  
Reactor Configuration ◽  
Polycrystalline Silicon Carbide

Polycrystalline silicon carbide was deposited from methyltrichlorosilane in cold-walled and hot-walled reactors, on (100) SiC surface layers that were formed on (100) Si wafers. The initial stages of the process were studied by electron microscopy after relatively short deposition times. Submicron surface features nucleated with a specific crystallographic orientation with respect to the substrate, where h111j planes in th—SiC substrate coincided with h0001j planes in the a–SiC features. These a–SiC features occurred only at twins on h111j planes of the b–SiC substrate. This demonstrates that nucleation under these conditions is controlled by defects in the substrate. Surface contamination and the reactor configuration also had substantial effects on nucleation.

Crystallographic Orientation in Bulk Polycrystalline Silicon Carbide Produced by a Chemical Vapor Deposition (CVD) Process

1999 ◽  
Vol 606 ◽  
Author(s):  
James V. Marzik ◽  
William J. Croft
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Crystallographic Orientation ◽  
Bulk Material ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Polycrystalline Silicon Carbide ◽  
High Degree ◽  
Microstructure Of The Material

AbstractPolycrystalline, theoretically dense silicon carbide was deposited onto graphite substrates via the reductive pyrolysis of methyltrichlorosilane in a hot-walled chemical vapor deposition (CVD) chamber. The resulting product can be considered a bulk material with deposit thicknesses in the range of 4 to 8 millimeters. The material was characterized using powder x-ray diffraction and Laue back-reflection techniques. Under the deposition conditions investigated in this study, the crystallographic orientation varied as a function of distance from the substrate. The material exhibited a high degree of randomness in proximity to the substrate, and progressively showed a higher degree of preferred crystallographic orientation as the deposit progressed. This phenomenon is correlated with the microstructure of the material as well as such mechanical properties as hardness and fracture toughness.

scholarly journals Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 237
Author(s):  
M. Abul Hossion ◽  
B. M. Arora
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Deposition Technique ◽  
Boron Doped ◽  
Vapor Deposition Technique ◽  
Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

Modeling of silicon carbide chemical vapor deposition in a vertical reactor

1999 ◽  
Vol 61-62 ◽  
pp. 172-175 ◽  
Author(s):  
A.N. Vorob’ev ◽  
Yu.E. Egorov ◽  
Yu.N. Makarov ◽  
A.I. Zhmakin ◽  
A.O. Galyukov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor
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