Growth of MgO by Metal-Organic Molecular Beam Epitaxy

1999 ◽  
Vol 606 ◽  
Author(s):  
Feng Niu ◽  
Brent.H. Hoerman ◽  
Bruce.W. Wessels
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Rf Plasma ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Transmission Electron ◽  
Auger Spectrometry ◽  
Metal Organic ◽  
Precursor Decomposition

AbstractMgO thin films were deposited on (100) Si substrates by metal-organic molecular beam epitaxy (MOMBE). Magnesium acetylacetonate was used as the precursor and an oxygen RF plasma was used as the oxidant. The films were characterized by a combination of transmission electron microscopy, Auger spectrometry and atomic force microscopy. Analyses indicate that the films directly deposited on Si substrates are stoichiometric, phase-pure, polycrystalline MgO with a [100] texture. Carbon contamination of the films resulting from precursor decomposition was not observed within detection limits. Furthermore, the growth rate of MgO has been systematically investigated as a function of growth temperature.

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 215
Author(s):  
Rajeev R. Kosireddy ◽  
Stephen T. Schaefer ◽  
Marko S. Milosavljevic ◽  
Shane R. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Interface Quality ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Lateral Variations

Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed.

Epitaxial Growth and Characterization of the Ordered Vacancy Compound CuIn3Se5 on GaAs (100) Fabricated by Molecular Beam Epitaxy

1994 ◽  
Vol 340 ◽  
Author(s):  
Art J. Nelson ◽  
M. Bode ◽  
G. Horner ◽  
K. Sinha ◽  
John Moreland
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Structural Defects ◽  
X Ray Diffraction ◽  
Symmetric Vibration ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

ABSTRACTEpitaxial growth of the ordered vacancy compound (OVC) CuIn3Se5 has been achieved on GaAs (100) by molecular beam epitaxy (MBE) from Cu2Se and In2Se3 sources. Electron probe microanalysis and X-ray diffraction have confirmed the composition for the 1-3-5 OVC phase and that the film is single crystal Culn3Se5 (100). Transmission electron microscopy (TEM) characterization of the material also showed it to be single crystalline. Structural defects in the layer consisted mainly of stacking faults. Photoluminescence (PL) measurements performed at 7.5 K indicate that the bandgap is 1.28 eV. Raman spectra reveal a strong polarized peak at 152 cm−1, which is believed to arise from the totally symmetric vibration of the Se atoms in the lattice. Atomic force microscopy reveals faceting in a preferred (100) orientation.

Study of Defects in p-type Layers in III-nitride Laser Diode Structures Grown by Molecular Beam Epitaxy

2006 ◽  
Vol 955 ◽  
Author(s):  
Huixin Xiu ◽  
Pedro MFJ Costa ◽  
Matthias Kauer ◽  
Tim M Smeeton ◽  
Stewart E Hooper ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Extended Defects ◽  
Tem Analysis ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
P Type ◽  
Nitride Laser ◽  
Cladding Layers

ABSTRACTThis paper reports on the study of defects in p-type layers in III-nitride laser structures grown by molecular beam epitaxy. Characterization of the heterostructures was carried out using atomic force microscopy and transmission electron microscopy. The results show that a high density of extended defects – possibly inversion domains – exist in the p-type cladding layers of as-grown structures with either AlGaN/GaN superlattices or bulk AlGaN cladding layers. TEM analysis of operated and aged devices does not reveal any significant structural modification of the p-type material which might be the cause of deterioration in the lasing performance or failure.

Ordering of InGaAs Quantum Dots Grown by Molecular Beam Epitaxy under As2 gas flux

2015 ◽  
Vol 1792 ◽  
Author(s):  
Mourad Benamara ◽  
Yuriy I. Mazur ◽  
Peter Lytvyn ◽  
Morgan E. Ware ◽  
Vitaliy Dorogan ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Quantum Dots ◽  
Atomic Force Microscopy ◽  
Molecular Beam Epitaxy ◽  
Large Scale ◽  
Molecular Beam ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

ABSTRACTThe influence of the substrate temperature on the morphology and ordering of InGaAs quantum dots (QD), grown on GaAs (001) wafers by Molecular Beam Epitaxy (MBE) under As2 flux has been studied using Transmission Electron Microscopy (TEM), Atomic Force Microscopy (AFM) and Photoluminescence (PL) measurements. The experimental results show that lateral and vertical orderings occur for temperatures greater than 520°C and that QDs self-organize in a 6-fold symmetry network on (001) surface for T=555°C. Vertical orderings of asymmetric QDs, along directions a few degrees off [001], are observed on a large scale and their formation is discussed.

scholarly journals High carrier mobility in single-crystal PtSe2 grown by molecular beam epitaxy on ZnO(0001)

2D Materials ◽  
2021 ◽  
Author(s):  
Frédéric Bonell ◽  
Alain Marty ◽  
Céline Vergnaud ◽  
Vincent Consonni ◽  
Hanako Okuno ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Mobility ◽  
Structural Quality ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
High Carrier Mobility ◽  
Insulating Substrates

Abstract PtSe2 is attracting considerable attention as a high mobility two-dimensional material with envisioned applications in microelectronics, photodetection and spintronics. The growth of high quality PtSe2 on insulating substrates with wafer-scale uniformity is a prerequisite for electronic transport investigations and practical use in devices. Here, we report the growth of highly oriented few-layers PtSe2 on ZnO(0001) by molecular beam epitaxy. The crystalline structure of the films is characterized with electron and X-ray diffraction, atomic force microscopy and transmission electron microscopy. The comparison with PtSe2 layers grown on graphene, sapphire, mica, SiO2 and Pt(111) shows that among insulating substrates, ZnO(0001) yields films of superior structural quality. Hall measurements performed on epitaxial ZnO/PtSe2 with 5 monolayers of PtSe2 show a clear semiconducting behaviour and a high mobility in excess of 200 cm2V-1s-1 at room temperature and up to 447 cm2V-1s-1 at low temperature.

Epitaxial Growth of AlN on 6H-SiC (1120) by Molecular-Beam Epitaxy and Effect of Low-Temperature Buffer Layer

2002 ◽  
Vol 743 ◽  
Author(s):  
N. Onojima ◽  
J. Suda ◽  
H. Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Epitaxial Relationship ◽  
Raman Scattering Spectroscopy ◽  
Force Microscopy ◽  
Atomic Force

ABSTRACTAluminum nitride (AlN) has been grown on 6H-silicon carbide (SiC) substrates with the non-polar (1120) face using rf plasma-assisted molecular-beam epitaxy (rf-MBE). Reflection high-energy electron diffraction (RHEED) revealed that AlN and 6H-SiC (1120) had an exact epitaxial relationship, i.e., [1120]AlN|[1120]SiC and [0001]AlN∥[0001]SiC. From the result of microscopic Raman scattering spectroscopy, the stacking structure of the AlN epitaxial layer was suggested to be a 2H structure, not a 6H structure. A directly grown AlN layer and layer with AlN low-temperature (LT) buffer layer were investigated based on atomic force microscopy (AFM) and X-ray diffraction (XRD).

Effect of High Temperature Single and Multiple AlN Intermediate Layers on N-polar and Ga-polar GaN Grown by Molecular Beam Epitaxy

2001 ◽  
Vol 693 ◽  
Author(s):  
F. Fedler ◽  
J. Stemmer ◽  
R. J. Hauenstein ◽  
T. Rotter ◽  
A. M. Sanchez ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Electron Mobility ◽  
Molecular Beam ◽  
Threading Dislocation ◽  
Electrical Measurements ◽  
Force Microscopy ◽  
Atomic Force ◽  
Intermediate Layers ◽  
Transmission Electron

AbstractWurtzite GaN samples containing one, three and five 4nm thick high temperature (HT) AlN Interlayers (IL) have been grown on (0001) sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). N-polar as well as Ga-polar thin films have been characterized by x-ray diffraction (XRD), atomic force microscopy (AFM), transmission electron microscopy (TEM), and electrical measurements.All samples under consideration show excellent AFM rms surface roughness below 1nm. Previously, we published a reduction of the threading dislocation (TD) density by a factor of seven due to the introduction of one AlN-IL. When introducing multiple AlN-IL a reduction by a factor of 5.2 is achieved.Hall measurements show a rise in electron mobility due to possible 2DEG formation at the interface between GaN and the AlN-ILs. Significant growth mode differences between Ga-polar and N-polar samples result in drastically higher electron mobility values for N-polar material. For N-polar samples the exceptional mobility increase from 68 (no AlN-IL) to 707 cm2/Vs (one AlN-IL) as well as the extremely low intrinsic carrier density of 1 x 1017 cm-3 prove the applicability of AlN barriers in inverted FET devices.

Effect of V/III Ratio on the Properties of GaN Layers Grown by Molecular Beam Epitaxy Using NH3

1998 ◽  
Vol 512 ◽  
Author(s):  
N. Grandjean ◽  
M. Leroux ◽  
J. Massies ◽  
M. Mesrine ◽  
P. Lorenzini
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Buffer Layers ◽  
Force Microscopy ◽  
Sapphire Substrates ◽  
Atomic Force ◽  
Piezoelectric Field ◽  
Secondary Ion

ABSTRACTAmmonia as nitrogen precursor has been used to grow III-V nitrides by molecular beam epitaxy (MBE) on c-plane sapphire substrates. The efficiency of NH3 has been evaluated allowing the determination of the actual V/III flux ratio used during the GaN growth. The effects of the V/III ratio variation on the GaN layer properties have been investigated by photoluminescence (PL), Hall measurements, atomic force microscopy (AFM), and secondary ion mass spectroscopy (SIMS). It is found that a high V/III ratio leads to the best material quality. Optimized GaN thick buffer layers have been used to grow GaN/AlGaN quantum well (QW) heterostructures. Their PL spectra exhibit well resolved emission peaks for QW thicknesses varying from 3 to 15 monolayers. From the variation of the QW energies as a function of well width, a piezoelectric field of 450 kV/cm is deduced.

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