Critical Mg doping on the blue-light emission in p-type GaN thin films grown by metal–organic chemical-vapor deposition

2003 ◽  
Vol 21 (1) ◽  
pp. 134-139 ◽  
Author(s):  
Keunjoo Kim ◽  
Joseph G. Harrison
2013 ◽  
Vol 579 ◽  
pp. 160-164 ◽  
Author(s):  
Jin Wang ◽  
Xin Dong ◽  
Baolin Zhang ◽  
Yuantao Zhang ◽  
Hui Wang ◽  
...  

2005 ◽  
Vol 34 (8) ◽  
pp. 1172-1176 ◽  
Author(s):  
S. T. Tan ◽  
B. J. Chen ◽  
X. W. Sun ◽  
M. B. Yu ◽  
X. H. Zhang ◽  
...  

2004 ◽  
Vol 449-452 ◽  
pp. 997-1000 ◽  
Author(s):  
Gwang Pyo Choi ◽  
Yong Joo Park ◽  
Whyo Sup Noh ◽  
Jin Seong Park

Tin oxide thin films were deposited at 375 °C on α-alumina substrate by metal-organic chemical vapor deposition (MOCVD) process. A number of hillocks on the film were formed after air annealing at 500 °C for 30 min and few things in N2 annealing. The oxygen content and the binding energy after air annealing came to close the stoichiometric SnO2. The cauliflower hillocks of the film seem to be formed by the continuous migration of crystallites from a cauliflower grain on the substrate to release the stress due to the increase of oxygen content and volume.


2007 ◽  
Vol 515 (5) ◽  
pp. 2921-2925 ◽  
Author(s):  
Chunyu Wang ◽  
Volker Cimalla ◽  
Genady Cherkashinin ◽  
Henry Romanus ◽  
Majdeddin Ali ◽  
...  

2003 ◽  
Vol 42 (Part 1, No. 5A) ◽  
pp. 2839-2842 ◽  
Author(s):  
Jeong Hoon Park ◽  
Kug Sun Hong ◽  
Woon Jo Cho ◽  
Jang-Hoon Chung

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