Three-dimensional silicon-based nanostructures in opal matrix: Preparation and properties

2000 ◽  
Vol 638 ◽  
Author(s):  
A.B. Pevtsov ◽  
V.G. Golubev ◽  
V.A. Kosobukin ◽  
D.A. Kurdyukov ◽  
A.V. Medvedev
Keyword(s):  
Near Infrared ◽  
Photonic Band Gap ◽  
Three Dimensional ◽  
Opal Matrix ◽  
Variable Extent ◽  
Infrared Spectral ◽  
Spectral Ranges ◽  
Silicon Based ◽  
Photonic Band ◽  
Matrix Preparation

AbstractThree-dimensional opal-silicon composites with both direct (a variable extent of filling of opal voids with silicon) and inverted structures have been synthesized. A structural analysis of these fabricated systems is performed. Reflectance spectra from the (111) surface of the composites are measured within the spectral range 400-900 nm. Observed spectral features are interpreted as a manifestation of the [111] direction photonic band gap that is tunable in position and width in the visible and near-infrared spectral ranges.

Progress Toward Crystalline-Silicon-Based Light-Emitting Diodes

MRS Bulletin ◽  
1993 ◽  
Vol 18 (7) ◽  
pp. 22-28 ◽  
Author(s):  
Leigh Canham
Keyword(s):  
Near Infrared ◽  
Crystalline Silicon ◽  
Light Emitting Diode ◽  
Holy Grail ◽  
Light Emitting ◽  
Vlsi Technology ◽  
Materials Research ◽  
Infrared Spectral ◽  
Spectral Ranges ◽  
Silicon Based

The semiconductor silicon is the dominant material in microelectronics and is one of the best-studied materials known to humanity. Its inability to emit light efficiently is therefore well documented. Nevertheless, a “holy grail” of semiconductor materials research has for decades been the realization of an efficient Si light-emitting diode (LED). Such a device would enable optoelectronic circuitry to be based entirely on silicon and would revolutionize VLSI technology since the other required Si-based devices (detectors, waveguides, modulators, etc.) have already been demonstrated. Although this holy grail has proved elusive, the 1990s have heralded greatly renewed interest and optimism in the development of such devices for both the visible and near-infrared spectral ranges. Dramatic progress is at last being made. This review focuses, in a somewhat chronological manner, on the progress of specific approaches to realizing crystalline structures of high radiative efficiency, and the materials constraints involved.

Three-dimensional ordered silicon-based nanostructures in opal matrix: preparation and photonic properties

2002 ◽  
Vol 299-302 ◽  
pp. 1062-1069 ◽  
Author(s):  
V.G. Golubev ◽  
J.L. Hutchison ◽  
V.A. Kosobukin ◽  
D.A. Kurdyukov ◽  
A.V. Medvedev ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Opal Matrix ◽  
Silicon Based ◽  
Matrix Preparation

scholarly journals Integrated Optical Phased Arrays for Beam Forming and Steering

2021 ◽  
Vol 11 (9) ◽  
pp. 4017
Author(s):  
Yongjun Guo ◽  
Yuhao Guo ◽  
Chunshu Li ◽  
Hao Zhang ◽  
Xiaoyan Zhou ◽  
...  
Keyword(s):  
Near Infrared ◽  
Phased Arrays ◽  
Mechanical Stability ◽  
Building Blocks ◽  
High Yield ◽  
Beam Forming ◽  
Integrated Optical ◽  
Optical Phased Arrays ◽  
Infrared Spectral ◽  
Spectral Ranges

Integrated optical phased arrays can be used for beam shaping and steering with a small footprint, lightweight, high mechanical stability, low price, and high-yield, benefiting from the mature CMOS-compatible fabrication. This paper reviews the development of integrated optical phased arrays in recent years. The principles, building blocks, and configurations of integrated optical phased arrays for beam forming and steering are presented. Various material platforms can be used to build integrated optical phased arrays, e.g., silicon photonics platforms, III/V platforms, and III–V/silicon hybrid platforms. Integrated optical phased arrays can be implemented in the visible, near-infrared, and mid-infrared spectral ranges. The main performance parameters, such as field of view, beamwidth, sidelobe suppression, modulation speed, power consumption, scalability, and so on, are discussed in detail. Some of the typical applications of integrated optical phased arrays, such as free-space communication, light detection and ranging, imaging, and biological sensing, are shown, with future perspectives provided at the end.

Development of 3D Ceramic Photonic Bandgap Structures

2007 ◽  
Vol 280-283 ◽  
pp. 533-536
Author(s):  
Hai Qing Yin ◽  
Soshu Kirihara ◽  
Yoshinari Miyamoto
Keyword(s):  
Band Gap ◽  
Photonic Bandgap ◽  
Photonic Band Gap ◽  
Three Dimensional ◽  
Cold Isostatic Pressing ◽  
Tio2 Powder ◽  
Lower Range ◽  
Photonic Band Gap Material ◽  
Photonic Bandgap Structures ◽  
Photonic Band

The three-dimensional (3D) photonic band gap material is a material that there exists a full photonic band gap in which waves are forbidden to propagate whatever the polarization or the direction of propagation. In order to obtain photonic bandgap in lower range, we focus on the fabrication of PBG materials of diamond structure with TiO2 powder mixed with SiO2. The inverse epoxy structure with periodic diamond lattices in millimeter order has been fabricated by stereolithographic rapid prototyping. TiO2 slurry was filled into the epoxy structure and then cold isostatic pressing was applied. After sintering at 700K for 5hrs, the epoxy was burnt out and the designed structure was maintained perfectly. The calculated band diagram shows that there exists an absolute photonic band gap for all wave vectors. The measurement of transmission from 10 to 20 GHz in <100> direction shows that a complete band gap is formed at about 14.7-18.5 GHz. The magnitude of the maximum attenuation is as large as 30 dB at 17 GHz.

scholarly journals ENHANCEMENT OF NEAR-INFRARED PHOTONIC BAND GAP IN A DOPED SEMICONDUCTOR PHOTONIC CRYSTAL

2012 ◽  
Vol 125 ◽  
pp. 219-235 ◽  
Author(s):  
Hui-Chuan Hung ◽  
Chien-Jang Wu ◽  
Tzong-Jer Yang ◽  
Shoou-Jinn Chang
Keyword(s):  
Photonic Crystal ◽  
Band Gap ◽  
Near Infrared ◽  
Photonic Band Gap ◽  
Photonic Band

scholarly journals Phoamtonic designs yield sizeable 3D photonic band gaps

2019 ◽  
Vol 116 (47) ◽  
pp. 23480-23486 ◽  
Author(s):  
Michael A. Klatt ◽  
Paul J. Steinhardt ◽  
Salvatore Torquato
Keyword(s):  
Band Gap ◽  
Volume Fraction ◽  
Photonic Band Gap ◽  
Three Dimensional ◽  
Band Gaps ◽  
Photonic Band Gaps ◽  
Photonic Networks ◽  
Photonic Waveguides ◽  
High Degree ◽  
Photonic Band

We show that it is possible to construct foam-based heterostructures with complete photonic band gaps. Three-dimensional foams are promising candidates for the self-organization of large photonic networks with combinations of physical characteristics that may be useful for applications. The largest band gap found is based on 3D Weaire–Phelan foam, a structure that was originally introduced as a solution to the Kelvin problem of finding the 3D tessellation composed of equal-volume cells that has the least surface area. The photonic band gap has a maximal size of 16.9% (at a volume fraction of 21.6% for a dielectric contrast ε=13) and a high degree of isotropy, properties that are advantageous in designing photonic waveguides and circuits. We also present results for 2 other foam-based heterostructures based on Kelvin and C15 foams that have somewhat smaller but still significant band gaps.

scholarly journals Breaking the absorption limit of Si toward SWIR wavelength range via strain engineering

2020 ◽  
Vol 6 (31) ◽  
pp. eabb0576
Author(s):  
Ajit K. Katiyar ◽  
Kean You Thai ◽  
Won Seok Yun ◽  
JaeDong Lee ◽  
Jong-Hyun Ahn
Keyword(s):  
Wavelength Range ◽  
Near Infrared ◽  
Three Dimensional ◽  
Strain Engineering ◽  
Obstacle Detection ◽  
Optical Bandgap ◽  
Engineering Material ◽  
Infrared Spectral Range ◽  
Infrared Spectral ◽  
Microelectronics Industry

Silicon has been widely used in the microelectronics industry. However, its photonic applications are restricted to visible and partial near-infrared spectral range owing to its fundamental optical bandgap (1.12 eV). With recent advances in strain engineering, material properties, including optical bandgap, can be tailored considerably. This paper reports the strain-induced shrinkage in the Si bandgap, providing photosensing well beyond its fundamental absorption limit in Si nanomembrane (NM) photodetectors (PDs). The Si-NM PD pixels were mechanically stretched (biaxially) by a maximum strain of ~3.5% through pneumatic pressure–induced bulging, enhancing photoresponsivity and extending the Si absorption limit up to 1550 nm, which is the essential wavelength range of the lidar sensors for obstacle detection in self-driving vehicles. The development of deformable three-dimensional optoelectronics via gas pressure–induced bulging also facilitated the realization of unique device designs with concave and convex hemispherical architectures, which mimics the electronic prototypes of biological eyes.

Electromagnetic properties of photonic crystals with diamond structure containing defects

2003 ◽  
Vol 18 (9) ◽  
pp. 2214-2220 ◽  
Author(s):  
Shingo Kanehira ◽  
Soshu Kirihara ◽  
Yoshinari Miyamoto ◽  
Kazuaki Sakoda ◽  
Mitsuo Wada Takeda
Keyword(s):  
Photonic Crystals ◽  
Band Gap ◽  
Photonic Band Gap ◽  
Three Dimensional ◽  
Expansion Method ◽  
Electromagnetic Properties ◽  
Diamond Structure ◽  
Multiple Reflections ◽  
Air Cavity ◽  
Photonic Band

Three-dimensional photonic crystals with a diamond structure, which are composed of the TiO2-based ceramic particles dispersed in an epoxy lattice, were fabricated by stereolithography. The diamond structure showed a photonic band gap in the 14.3–17.0 GHz range along the Γ-K 〈110〉 direction, which is close to the band calculation using the plain wave expansion method. Two types of lattice defects—air cavity and dielectric cavity—were introduced into the diamond structure by removing a unit cell of diamond structure or inserting a block of the lattice medium into the air cavity. The transmission of millimeter waves affected by multiple reflections at the defects was measured in the photonic band gap. Resonant frequencies in the defects were calculated and compared with the measurement results.

Transmission Characterization of Drilled Alternating-Layer Three-Dimensional Photonic Crystals

2001 ◽  
Vol 692 ◽  
Author(s):  
Eiichi Kuramochi ◽  
Masaya Notomi ◽  
Itaru Yokohama ◽  
Jun-ichi Takahashi ◽  
Chiharu Takahashi ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Light Transmission ◽  
Photonic Band Gap ◽  
Three Dimensional ◽  
Dielectric Films ◽  
Transmission Minimum ◽  
Photonic Band

AbstractWe propose a new three-dimensional photonic crystal structure or drilled alternating-layer photonic crystal (DALPC), which can be fabricated by a combination of the deposition of alternating layers of dielectric films and one-time dry etching. Our band calculation predicts that the DALPC has a photonic band gap (PBG) in all directions. We fabricated a Si/SiO2DALPC by electron beam lithography, bias sputtering, and fluoride-gas electron cyclotron resonance etching. We measured the light transmission of the DALPC sample in both the in-plane and vertical directions. We observed a transmission minimum around the 1.4-μm-wavelength for all measured directions and TE/TM polarizations, which demonstrated a potential of the DALPC as a three-dimensional PBG material.

Modulation of Three Dimensional Photonic Band Gap in Visible Region

2007 ◽  
Vol 31 ◽  
pp. 20-22 ◽  
Author(s):  
Y.P. Liu ◽  
Y.P. Guo ◽  
Z.J. Yan ◽  
C.M. Huang ◽  
Y.Y. Wang
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Photonic Band Gap ◽  
Bragg Reflection ◽  
Quartz Substrate ◽  
Three Dimensional ◽  
Visible Region ◽  
Sphere Size ◽  
Vertical Deposition Method ◽  
Photonic Band

Three dimensional (3D) SiO2 photonic crystals films were fabricated on quartz substrate by vertical deposition method. The effects of various preparation parameters on optical properties were studied by optical transmission measurements. Bragg reflection on parallel sets of (111) planes were observed in all the samples. The center wavelength of [111] photonic band gap (PBG) varied from 450 nm to 680 nm with the increasing sphere size. For a given sphere size, the (111) Bragg reflection of as-deposited sample shifted towards lower wavelengths as the sintering temperature T increased. The role of evaporation temperature on the optical properties of the film was also investigated. The PBG can be correspondingly modulated in visible region by changing various preparation parameters.

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