Structural Properties of 3C-SiC Layers Grown on Si Substrates by Electron Cyclotron Resonance CVD Technique

2000 ◽  
Vol 640 ◽  
Author(s):  
F. Giorgis ◽  
A. Chiodoni ◽  
G. Cicero ◽  
S. Ferrero ◽  
P. Mandracci ◽  
...  
Keyword(s):  
Structural Properties ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Columnar Structure ◽  
Electron Cyclotron ◽  
Si Substrates ◽  
Transmission Electron ◽  
Polycrystalline Silicon Carbide ◽  
Lateral Crystal

ABSTRACTIn this work we mainly report on the analyses of polycrystalline silicon carbide films grown by Electron Cyclotron Resonance Chemical Vapor Deposition (ECR-CVD) on Si (100) and Si (111) substrates. Structural properties of the films have been analyzed by X-ray diffractometry, transmission electron microscopy and micro-Raman spectroscopy. Samples deposited with optimized deposition conditions, show a polycrystalline columnar structure with lateral crystal dimensions ranging from 300 up to 1400 Å and an orientation close to that of the Si substrates.

scholarly journals Flipping growth orientation of nanographitic structures by plasma enhanced chemical vapor deposition

RSC Advances ◽  
2015 ◽  
Vol 5 (111) ◽  
pp. 91922-91931 ◽  
Author(s):  
Subrata Ghosh ◽  
K. Ganesan ◽  
S. R. Polaki ◽  
S. Ilango ◽  
S. Amirthapandian ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Electron Cyclotron ◽  
Morphological Features ◽  
Growth Orientation ◽  
Si Substrates ◽  
Resonance Plasma

Nanographitic structures (NGSs) with a multitude of morphological features are grown on SiO2/Si substrates by electron cyclotron resonance-plasma enhanced chemical vapor deposition (ECR-PECVD).

Sign in / Sign up

Export Citation Format

Share Document