Transition Metal Impurity-Dislocation Interactions in NiAl: Dislocation Friction and Dislocation Locking

2000 ◽  
Vol 646 ◽  
Author(s):  
O. Yu. Kontsevoi ◽  
Yu.N. Gornostyrev ◽  
A.J. Freeman

ABSTRACTThe energetics of the interaction of the <100>{010} edge dislocation in NiAl with early 3d transition metal (TM) impurities was studied using the ab initio real-space tight-binding LMTO-recursion method with 20,000 atom clusters and up to 1,000 non-equivalent atoms in the dislocation core. The coordinates of the atoms in the core were determined within the Peierls-Nabarro (PN) model with restoring forces determined from full-potential LMTO total energy calculations. TM impurities were then placed in different substitutional positions near the dislocation core. For most positions studied, the interaction between impurities and the dislocation is found to be repulsive (dislocation friction). However, when the impurity is in the position close to the central atom of the dislocation core, the interaction becomes strongly attractive, thus causing dislocation locking. Since the size misfit between the Al atom and the substituting TM atom is very small, this locking cannot be explained by elastic (or size misfit) mechanisms; it has an electronic nature and is caused by the formation of the preferred bonding between the electronic states of the impurity atom and the localized electronic states appearing on the central atom of the dislocation core. The calculated results are then discussed in the scope of experimental data on solid solution hardening in NiAl.

1982 ◽  
Vol 37 (10) ◽  
pp. 1147-1164
Author(s):  
K. Masuda

The chemisorption of a two-level (at E1 and E2) adsorbate on the (001) surface of a tightbinding metal is investigated using the Green's function formalism and the phase shift technique. The adorbital density of states (DOS)ϱa(E) as well as the change in the electronic DOS Δϱ(E; E1, E2) due to chemisorption are calculated for the ordered overlayers with c(2 x 2), p(2 x 1), p(2 X 2), p(4 X 1) and c(4 X 2) structures. It is assumed that the chemisorbed species sit over the twofold bridge site of the (001) surface of the model transition metal and have a π-bonding interaction with the two substrate atoms. It is shown that the electronic states of the overlayers are very sensitive to the adsorbate coverage (0), adsorbate structure and adsorbate species (one level or two level adsorbates). Furthermore, it is shown that there are marked differences in the Δϱ(E) curves between the chemisorption of two level adsorbates Δϱ(E; E1, E2) and that of single level adsorbates Δϱ(E; E1) + Δϱ(E; E2) (simulating the changes in the electronic DOS during the dissociation of diatomic molecules).


1998 ◽  
Vol 538 ◽  
Author(s):  
M. Mrovec ◽  
V. Vitek ◽  
D. Nguyen-Manh ◽  
D. G. Pettifor ◽  
L. G. Wang ◽  
...  

AbstractThe bond-order potentials (BOP) have been constructed for Mo and Nb. These potentials are based on the real-space parametrized tight-binding method in which diagonalization of the Hamiltonian is avoided by direct calculation of the bond-order. In this scheme the energy consists of three parts: The bond part that comprises contributions of d electrons and introduces into the scheme the covalent character of bonding, the central-force many-body part that reflects the environmental dependence of sp overlap repulsion and a pair-wise contribution. The potentials were tested by calculation of energy differences between the bcc and several alternate structures and by investigating the trigonal deformation path. These calculations have been made in parallel using BOP and the full-potential linearized augmented plane-wave method. The central-force many-body Finnis-Sinclair type potentials have also been included into the study of the deformation path. This evaluation of BOP reveals that the potentials reproduce very closely the ab initio results and are, therefore, very suitable for atomistic studies of extended defects in the transition metals.


1970 ◽  
Vol 44 (3) ◽  
pp. 255-264
Author(s):  
M Abdus Salam ◽  
Kabir Ahmed ◽  
BP Barua ◽  
MSI Aziz

We have studied here the electronic structure of pure random disordered alloys formed by Ni with Cu and Au at different ratios by using the linearized tight-binding muffin-tin Orbital (TB-LMTO) method. We also used the recursion technique together with augmented space formalism for increasing the efficiency and the accuracy to calculate the component projected density of states. From the density of state, we can understand the Fermi energy, magnetic moment and binding energy at different alloy compositions. The band structure can be calculated from here also. These studies are helpful for experimentalists and metallurgists in designing materials and alloys with specific properties. Key words: Electronic structure, Alloys, TB-LMTO, Density of states, Augmented space recursion   DOI: 10.3329/bjsir.v44i3. Bangladesh J. Sci. Ind. Res. 44(3), 255-264, 2009


1997 ◽  
Vol 491 ◽  
Author(s):  
Leo Miglio ◽  
Francesca Tavazza ◽  
Antonio Garbelli ◽  
Massimo Celino

ABSTRACTWe point out that the predictive power of tight binding potentials is not limited to obtaining fairly accurate total energy calculations and very satisfactory structural evolutions by molecular dynamics simulations. They also allow for a nice physical picture of the links between bonding and stability in different structures, which is particularly helpful in the case of binary suicides


1991 ◽  
Vol 231 ◽  
Author(s):  
A. Vega ◽  
A. Rubio ◽  
L.C. Balbas ◽  
J. Dorantes-Davila ◽  
C. Demangeat ◽  
...  

AbstractWe have investigated the magnetic arrangment of 3d transition-metal stepped surface by using a self-consistent real-space tight-binding method. As expected, the presence of steps modifies locally the properties of a transition-metal surface. We emphasized the influence of atomic environment. We found for the (100)-Fe surface, an enhancement of the magnetic moments of the external edge of this step as compared to the flat surface. The results are not very sensitives to the step length. More striking is the case of the (100)-V stepped surface where atoms at the external edge display a large magnetic moment.


1997 ◽  
Vol 491 ◽  
Author(s):  
O. Yu. Kontsevoi ◽  
O. N. Mryasov ◽  
Yu. N. Gornostyrev ◽  
A. J. Freeman

ABSTRACTA real-space TB-LMTO-recursion method for electronic structure calculations is applied to the study of interacting extended and point defects in NiAl. Results of calculations for the pure intermetallic and with ternary additions (within a supercell model) show good agreement with band structure results. Further, electronic structure and total energy calculations of point (single impurity, M=Ti, V, Cr, Mn, Fe and Co) and planar defects such as anti-phase boundaries (APB) were carried out and the interaction between them was determined. We found that for the ½〈111〉{110} APB in NiAl, ternary additions occupy exclusively the 3d-metal sublattice and decrease the APB energy (except for Co). Finally, we employ TB-LMTO-REC to study the electronic structure of the most complex extended defect, a dislocation. We demonstrate for the 〈100〉{010} edge dislocation in NiAl that: (i) quasi-localized states may exist as a result of specific lattice distortions in the dislocation core with a type of “broken” bonds; (ii) the electronic structure changes appreciably in the process of dislocation motion; (iii) van-Hove singularities present in the ideal crystal may be shifted to E;r as a result of the dipolar character of the deformations in the dislocation core.


2004 ◽  
Vol 842 ◽  
Author(s):  
Marc J. Cawkwell ◽  
Matous Mrovec ◽  
Duc Nguyen-Manh ◽  
David G. Pettifor ◽  
Vaclav Vitek

ABSTRACTThe intermetallic compound MoSi2, which adopts the C11b crystal structure, and related alloys exhibit an excellent corrosion resistance at high temperatures but tend to be brittle at room and even relatively high temperatures. The limited ductility of MoSi2 in ambient conditions along with the anomalous temperature dependence of the critical resolved shear stress (CRSS) of the {110)<111], {011)<100] and {010)<100] slip systems and departure from Schmid law behavior of the {013)<331] slip system can all be attributed to complex dislocation core structures. We have therefore developed a Bond-Order Potential (BOP) for MoSi2 for use in the atomistic simulation of dislocations and other extended defects. BOPs are a real-space, O(N), two-center orthogonal tight-binding formalism that are naturally able to describe systems with mixed metallic and covalent bonding. In this development novel analytic screening functions have been adopted to properly describe the environmental dependence of bond integrals in the open, bcc-based C11b crystal structure. A many-body repulsive term is included in the model that allows us to fit the elastic constants and negative Cauchy pressures of MoSi2. Due to the internal degree of freedom in the position of the Si atoms in the C11b structure which is a function of volume, it was necessary to adopt a self-consistent procedure in the fitting of the BOP. The constructed BOP is found to be an excellent description of cohesion in C11b MoSi2 and we have carefully assessed its transferability to other crystal structures and stoichiometries, notably C 40, C 49 and C 54 MoSi2, A15 and D03 Mo3Si and D8m Mo5Si3 by comparing with ab initio structural optimizations.


2021 ◽  
Vol 7 (2) ◽  
pp. eabd4248
Author(s):  
Fengmiao Li ◽  
Yuting Zou ◽  
Myung-Geun Han ◽  
Kateryna Foyevtsova ◽  
Hyungki Shin ◽  
...  

Titanium monoxide (TiO), an important member of the rock salt 3d transition-metal monoxides, has not been studied in the stoichiometric single-crystal form. It has been challenging to prepare stoichiometric TiO due to the highly reactive Ti2+. We adapt a closely lattice-matched MgO(001) substrate and report the successful growth of single-crystalline TiO(001) film using molecular beam epitaxy. This enables a first-time study of stoichiometric TiO thin films, showing that TiO is metal but in proximity to Mott insulating state. We observe a transition to the superconducting phase below 0.5 K close to that of Ti metal. Density functional theory (DFT) and a DFT-based tight-binding model demonstrate the extreme importance of direct Ti–Ti bonding in TiO, suggesting that similar superconductivity exists in TiO and Ti metal. Our work introduces the new concept that TiO behaves more similar to its metal counterpart, distinguishing it from other 3d transition-metal monoxides.


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