Mechanism of Quality Factor Compensation by Nb2O5 Addition for Dielectric Properties of Low-T Sintered ZST Microwave Ceramics

2000 ◽  
Vol 658 ◽  
Author(s):  
Yong H. Park ◽  
Moo Y. Shin ◽  
Hyung H. Kim ◽  
Kyung H. Ko
Keyword(s):  
Dielectric Properties ◽  
Grain Boundaries ◽  
Quality Factor ◽  
Microwave Dielectric Properties ◽  
Microwave Ceramics ◽  
Microwave Dielectric ◽  
Post Annealing ◽  
X Band ◽  
Second Phases ◽  
Nb Addition

ABSTRACTIt has been known that some additives such as Nb2O5 are efficient quality factor compensators to potential additives for low-T sintering of (Zr0.8Sn0.2)TiO4such asZnO. The compensation mechanism of Nb2O5was analyzed in the light of its effects on the Zn incorporation in grains. ZST ceramics were prepared by conventional mixed oxide method and their microwave dielectric properties including quality factor, permittivity and temperature coefficient frequency (TCF) were measured at X-band. After sintering at 1350 and 1400oC, samples were post-annealed at 900∼1100oC. It was found that as Nb2O5 was added, the quality factor of 6 mol % ZnO-ZST specimens increased from 24000 to 44000 without any sacrificing of other dielectric properties such as permittivity and TCF. According to TEM and XRD, Nb addition tends to enhance Zn diffusion toward grain boundaries while Nb moved in the opposite direction. Due to the fact that no second phases were formed, it was assumed that the redistribution of Zn and Nb could play a major role in the enhancement mechanism of quality factor. Post-annealing can also be a secondary booster for the quality factor of ZST. After annealing at 900∼1100oC, the quality factor of a specimen with additives, increased again up to 48000 due to further decrease of oxygen vacancies resulting from further out-diffusion of Zn toward grain boundaries and incorporation of Nb into the grain.

Preparation and Microwave Dielectric Properties of xBaZn2Ti4O11-(1-x)BaNd2Ti4O12 Ceramics

2017 ◽  
Vol 726 ◽  
pp. 210-214
Author(s):  
Xu Wang ◽  
Ren Li Fu ◽  
Yue Xu ◽  
Yang Yang ◽  
Jun De Cai ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Microwave Dielectric Properties ◽  
Solid State Reaction Method ◽  
Phase System ◽  
Microwave Ceramics ◽  
Two Phase ◽  
Microwave Dielectric ◽  
X Band ◽  
High Dielectric

xBaZn2Ti4O11–(1-x)BaNd2Ti4O12 (x = 0.18–0.30) ceramics were prepared by solid-state reaction method and their microwave dielectric properties were investigated with the purpose of finding a microwave ceramics with high dielectric constant (εr), high quality factor (Q×f ) and zero temperature coefficient of resonant frequency (τf).The two phase system BaZn2Ti4O11–BaNd2Ti4O12 affected the unit cell volume and the microstructure, the microwave dielectric properties (εr, Q×f, τf). As increasing x from 0.18 to 0.30, the main phase composition was BaNd2Ti4O12. Therefore, the εr decreased from 64.9 to 60.3 and the Q×f values raised from 11,350GHz to 13,210GHz, and the τf values decreased from 7ppm/° to -5ppm/°.The 0.22BaZn2Ti4O11–0.78BaNd2Ti4O12 ceramics sintered at 1250°C for 4 h displayed the best dielectric constant εr,Q×f and τf, as 63.9, 12380 GHz and-0.1 ppm/° respectively.

Microwave dielectric properties of Ca[(Li1/3Nb2/3)1−xMx]O3−δ (M = Sn, Ti) ceramics

1999 ◽  
Vol 14 (9) ◽  
pp. 3567-3570 ◽  
Author(s):  
Ji-Won Choi ◽  
Chong-Yun Kang ◽  
Seok-Jin Yoon ◽  
Hyun-Jai Kim ◽  
Hyung-Jin Jung ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Resonant Frequency ◽  
Temperature Coefficient ◽  
Quality Factor ◽  
Single Phase ◽  
Microwave Dielectric Properties ◽  
Multiphase Materials ◽  
Microwave Dielectric ◽  
Orthorhombic Perovskite

The microwave dielectric properties of Ca[(Li1/3Nb2/3)1−xMx]O3−δ (M = Sn, Ti, 0 ≤ x ≤ 0.5) ceramics were investigated. In general, the ceramics prepared were multiphase materials. However, single-phase specimens having orthorhombic perovskite structure similar to CaTiO3 could be obtained in the vicinity of Sn = 0.2 to 0.3, and Ti = 0.2. As Sn concentration increased, the dielectric constant (εr) decreased and the quality factor (Q) significantly increased within the limited Sn concentration. As Ti concentration increased, the dielectric constant (εr) increased, the quality factor (Q) decreased, and the temperature coefficient of resonant frequency (τf) changed from a negative to positive value. The temperature coefficient of resonant frequency of 0 ppm/°C was realized at Ti = 0.2. The Q · fo value and εr for this composition were found to be 26100 GHz and 38.6, respectively.

Influences of MnCO3 Doping on Processing Parameters and Dielectric Properties of ZnNb2O6 Microwave Ceramics

2007 ◽  
Vol 280-283 ◽  
pp. 23-26
Author(s):  
J. Luo ◽  
Z.Y. Pang ◽  
Y.S. Lin ◽  
Zhao Xian Xiong
Keyword(s):  
Dielectric Properties ◽  
Ceramic Body ◽  
Microwave Dielectric Properties ◽  
Microwave Frequency ◽  
Solid State Reaction Method ◽  
Processing Parameters ◽  
Microwave Ceramics ◽  
Conventional Solid State Reaction ◽  
Microwave Dielectric ◽  
Ceramic Microstructure

MnCO3 was added into ZnNb2O6 ceramics to obtain excellent microwave dielectric properties. The samples were prepared by conventional solid-state reaction method. The effects of the amount of MnCO3 on sintering temperatures, ceramic densities and contraction were systematically investigated. The crystalline structure of ceramic body was analyzed by XRD. The ceramic microstructure was observed by SEM. The dielectric properties of ZnNb2O6 ceramics were measured by a vector network analyzer at microwave frequency, which showed: er = 22.65, Q×f = 36700 GHz (loaded value) and tf = -40 ppm/°C.

Sintering Behavior and Microwave Dielectric Properties of Li2O-B2O3-SiO2 Doped 0.67CaTiO3-0.33LaAlO3 Ceramics

2017 ◽  
Vol 726 ◽  
pp. 220-224
Author(s):  
Gan Wang ◽  
Juan Jiang ◽  
Zhan Ming Dou ◽  
Fan Fan Ning ◽  
Er Tian Zhang ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Dielectric Properties ◽  
Quality Factor ◽  
Amorphous State ◽  
Microwave Dielectric Properties ◽  
Sintering Behavior ◽  
Low Temperature Sintering ◽  
Microwave Dielectric ◽  
Structure Surface ◽  
Sintering Method

A low temperature sintering method was used to avoid the relatively high sintering temperatures typically required to prepare 0.67CaTiO3-0.33LaAlO3 (CTLA) ceramics. 0.67CaTiO3-0.33LaAlO3 ceramics doped with Li2O-B2O3-SiO2 (LBS) were prepared by a conventional two-step solid-state reaction process. The sintering behavior, crystal structure, surface morphology, and microwave dielectric proprieties of the prepared ceramics were studied. As the small amount of LBS content increased, the small amount of liquid phase formed in an amorphous state around the surface of the grain boundaries. With the increase the content of LBS glass, the quality factor (Q×f) value decreased. CTLA+0.05 wt.% LBS ceramics sintered at 1320°C for 4h exhibited the optimal microwave dielectric properties of dielectric permittivity (εr) = 45.02, quality factor (Q×f) = 37400 GHz, and temperature coefficient of resonant frequency (τf) = 9.84 ppm/°C. .

Effects of CuO and V2O5 Addition on Sintering Behavior and Microwave Dielectric Properties of (1-x)Ca2P2O7-xTiO2

2007 ◽  
Vol 336-338 ◽  
pp. 279-282
Author(s):  
In Sun Cho ◽  
Sang Gu Kang ◽  
Dong Wan Kim ◽  
Kug Sun Hong
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Resonant Frequency ◽  
Temperature Coefficient ◽  
Quality Factor ◽  
Sintering Temperature ◽  
Microwave Dielectric Properties ◽  
Sintering Behavior ◽  
Microwave Dielectric

The effects of CuO and V2O5 addition on sintering behaviors and microwave dielectric properties of 0.7Ca2P2O7-0.3TiO2 ceramics were investigated. With CuO and V2O5 addition, the sintering temperature of 0.7Ca2P2O7-0.3TiO2 can be effectively reduced from 1150 to 950oC. The dielectric constant of the low fired 0.7Ca2P2O7-0.3TiO2 ceramics was not significantly changed while the quality factor was affected by additives. The temperature coefficient of resonant frequency value was increased in negative value with the additive contents. V2O5 and CuO additives effectively improved the densification and dielectric properties of 0.7Ca2P2O7-0.3TiO2 ceramics. The correlation between the phase constituents and the dielectric properties was investigated with additive contents.

The Effect CuO Additive on the Microwave Dielectric Properties of Mg(Zr0.05Ti0.95)O3 Ceramics

2011 ◽  
Vol 687 ◽  
pp. 199-203 ◽  
Author(s):  
Ching Fang Tseng
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Solid State ◽  
Liquid Phase ◽  
Solid State Reaction ◽  
Microwave Dielectric Properties ◽  
Solid State Reaction Method ◽  
Reaction Method ◽  
Microwave Dielectric ◽  
Second Phases

The microwave dielectric properties of the Mg(Zr0.05Ti0.95)O3ceramics with CuO addition were investigated. All specimens were prepared by solid-state reaction method and sintered at 1270-1420°C for 4 h. When CuO was added, the second phases of MgTi2O5, TiO2and liquid phase were produced. For specimens with 1.5 wt% CuO sintered at 1300°C, the dielectric constant,Q´fand tfvalues are 18.2, 223000 GHz and -2 ppm/°C, respectively.

Sign in / Sign up

Export Citation Format

Share Document