Photoluminescence and Raman Spectroscopy Studies of H+ Ion Implanted SOI Structures Formed by Hydrogen Ion Slicing

2001 ◽  
Vol 667 ◽  
Author(s):  
Vladimir P. Popov ◽  
Ida E. Tyschenko ◽  
Konstantin S. Zhuravlev ◽  
Ivan I. Morosov
Keyword(s):  
Raman Spectroscopy ◽  
Silicon Film ◽  
Hydrogen Ion ◽  
Furnace Annealing ◽  
Annealing Conditions ◽  
Si Nanocrystals ◽  
Heat Treated ◽  
Amorphous Si ◽  
Spectroscopy Studies ◽  
Ion Implanted

ABSTRACTH+ ion implanted SOI structures formed by hydrogen ion slicing have been investigated by Raman spectroscopy and photoluminescence (PL). After implantation the wafers have been heat-treated by either furnace annealing (FA) or rapid thermal annealing (RTA). It has been found that implantation of 3 × 1017 H+/cm2 results in the formation of the amorphous Si layer (a-Si) inside silicon film on insulator. Structural transformations in a-Si depended on the annealing conditions. FA led to crystallization of a-Si and to the formation of monocrystalline silicon films. RTA results in the formation of the layers containing a high density of Si nanocrystals. A comparison of the Raman measurements with the PL data allows to conclude that PL bands obtained near 420 and 500 nm are not associated with the radiative recombination in Si nanocrystals.

Raman spectroscopy studies of progressively annealed amorphous Si/Ge superlattices

1991 ◽  
Vol 70 (6) ◽  
pp. 3088-3092 ◽  
Author(s):  
Sunil Kumar ◽  
H. J. Trodahl
Keyword(s):  
Raman Spectroscopy ◽  
Amorphous Si ◽  
Spectroscopy Studies

Raman Spectroscopy of Si Nanocrystals in Nanocrystalline Si Superlattices: Size, Shape and Crystallographic Orientation

2000 ◽  
Vol 638 ◽  
Author(s):  
G. F. Grom ◽  
P. M. Fauchet ◽  
L. Tsybeskov ◽  
J. P. McCaffrey ◽  
H. J. Labbé ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Crystallographic Orientation ◽  
Phonon Scattering ◽  
Solid Phase ◽  
Structural Parameters ◽  
Device Fabrication ◽  
Interface Roughness ◽  
Solid Phase Crystallization ◽  
Si Nanocrystals ◽  
Amorphous Si

AbstractWe use Raman spectroscopy to study the size, shape and crystallographic orientation of silicon nanocrystals formed by solid phase crystallization of amorphous Si/SiO2 superlattices (SLs) grown by radio-frequency sputtering. The first and second Raman peaks broadening, their relative positions and intensities indicate the presence of nanoscale Si objects with a degree of disorder (grain boundaries) and strain (Si/SiO2 interfaces). Shapes of Si nanocrystals sandwiched between SiO2 layers strongly influence the Si/SiO2 interface roughness, which is inferred from the intensities of folded acoustic phonon scattering. The averaged crystallographic orientation of Si nanocrystals is determined by polarized Raman analysis. The laterally elongated nanocrystals exhibit <111> preferred crystallographic orientation along the SL axis due to orientation-dependent crystallization rates. These results demonstrate that control over Si nanocrystals structural parameters has been achieved and that solid phase crystallization of nanometer-thick amorphous Si films remains one of the most promising techniques for Si-based nanoelectronic device fabrication.

In Situ Raman Spectroscopy Studies on La2CaB10O19 Crystal Growth

2020 ◽  
Vol 20 (10) ◽  
pp. 6604-6609
Author(s):  
Shanshan Liu ◽  
Guochun Zhang ◽  
Kai Feng ◽  
Yanyang Han ◽  
Tao He ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Crystal Growth ◽  
In Situ Raman Spectroscopy ◽  
In Situ Raman ◽  
Spectroscopy Studies

Femtosecond laser induced formation of Si nanocrystals and amorphous Si clusters in silicon-rich nitride films

2010 ◽  
Vol 42 (6) ◽  
pp. 1820-1823 ◽  
Author(s):  
V.A. Volodin ◽  
T.T. Korchagina ◽  
J. Koch ◽  
B.N. Chichkov
Keyword(s):  
Femtosecond Laser ◽  
Si Nanocrystals ◽  
Amorphous Si

Activation of silicon ion-implanted gallium nitride by furnace annealing

1999 ◽  
Vol 28 (3) ◽  
pp. 319-324 ◽  
Author(s):  
R. D. Dupuis ◽  
C. J. Eiting ◽  
P. A. Grudowski ◽  
H. Hsia ◽  
Z. Tang ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Furnace Annealing ◽  
Ion Implanted

Raman spectroscopy studies of Er3+-doped zinc tellurite glasses

2005 ◽  
Vol 351 (10-11) ◽  
pp. 833-837 ◽  
Author(s):  
N. Jaba ◽  
A. Mermet ◽  
E. Duval ◽  
B. Champagnon
Keyword(s):  
Raman Spectroscopy ◽  
Tellurite Glasses ◽  
Spectroscopy Studies
Sign in / Sign up

Export Citation Format

Share Document