Deep ultra violet and visible Raman spectroscopy studies of ion implanted 6H-SiC: Recrytallisation behaviour and thermal decomposition/thermal etching of the near surface region

2015 ◽  
Vol 365 ◽  
pp. 342-346 ◽  
Author(s):  
R.J. Kuhudzai ◽  
J.B. Malherbe ◽  
N.G. van der Berg ◽  
T.T. Hlatshwayo ◽  
O. Odutemowo ◽  
...  
Keyword(s):  
Thermal Decomposition ◽  
Raman Spectroscopy ◽  
Ultra Violet ◽  
Surface Region ◽  
Near Surface ◽  
Thermal Etching ◽  
Spectroscopy Studies ◽  
Ion Implanted

scholarly journals Microstructure and Mechanical Properties of Ti + N Ion Implanted Cronidur30 Steel

Materials ◽  
2019 ◽  
Vol 12 (3) ◽  
pp. 427 ◽  
Author(s):  
Jie Jin ◽  
Wei Wang ◽  
Xinchun Chen
Keyword(s):  
Mechanical Properties ◽  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Structural Modification ◽  
Surface Region ◽  
Grazing Incidence ◽  
Bearing Steel ◽  
Near Surface ◽  
X Ray ◽  
Ion Implanted

In this study, Ti + N ion implantation was used as a surface modification method for surface hardening and friction-reducing properties of Cronidur30 bearing steel. The structural modification and newly-formed ceramic phases induced by the ion implantation processes were investigated by transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and grazing incidence X-ray diffraction (GIXRD). The mechanical properties of the samples were tested by nanoindentation and friction experiments. The surface nanohardness was also improved significantly, changing from ~10.5 GPa (pristine substrate) to ~14.2 GPa (Ti + N implanted sample). The friction coefficient of Ti + N ion implanted samples was greatly reduced before failure, which is less than one third of pristine samples. Furthermore, the TEM analyses confirmed a trilamellar structure at the near-surface region, in which amorphous/ceramic nanocrystalline phases were embedded into the implanted layers. The combined structural modification and hardening ceramic phases played a crucial role in improving surface properties, and the variations in these two factors determined the differences in the mechanical properties of the samples.

Effects of Ge-Implantation on the Photoluminescence of CuGaSe2 Thin Films

2005 ◽  
Vol 865 ◽  
Author(s):  
Serge Doka ◽  
Marin Rusu ◽  
Alex Meeder ◽  
Ernest Arushanov ◽  
Norbert Fabre ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Treatment ◽  
Ultra Violet ◽  
Surface Region ◽  
Vapor Transport ◽  
Treatment Results ◽  
Excitation Energies ◽  
Near Surface ◽  
Pl Spectra ◽  
Extrinsic Defects

AbstractPhotoluminescence (PL) spectra of as grown Ga-rich, and Ga-rich plus Ge-doped and annealed CCSVT (Chemical Close-Spaced Vapor Transport) — CuGaSe2 thin films have been investigated. Visible (514.5 nm) and Ultra- Violet (351.1 nm) excitation energies of the laser have been used in order to determine intrinsic and extrinsic defects created due to the implantation as well as separating near surface from bulk recombination.Both visible and UV-PL spectra of the undoped films show the well known luminescence of Ga-rich CuGaSe2, which can be described by the widely accepted model of fluctuating potentials. Unlike the visible- and UV-PL emissions of Ge- implanted and annealed films differ strongly. Obviously, Ge-implantation in combination with the thermal treatment results in an extrinsic doping of the material producing so far unknown states in the CuGaSe2 band gap. Comparing the visible- and the UV-PL spectra we found an accumulation of these extrinsic doping levels in the near-surface-region of the films.

BIC Formation and Boron Diffusion in Relaxed Si0.8Ge0.2

2004 ◽  
Vol 810 ◽  
Author(s):  
R. T. Crosby ◽  
L. Radic ◽  
K. S. Jones ◽  
M. E. Law ◽  
P.E. Thompson ◽  
...  
Keyword(s):  
Surface Region ◽  
Extended Defects ◽  
Defect Structures ◽  
Boron Diffusion ◽  
Plan View ◽  
Near Surface ◽  
Transmission Electron ◽  
Secondary Ion ◽  
Ion Implanted

ABSTRACTThe relationships between Boron Interstitial Cluster (BIC) evolution and boron diffusion in relaxed Si0.8Ge0.2 have been investigated. Structures were grown by Molecular Beam Epitaxy (MBE) with surface boron wells of variant composition extending 0.25 [.proportional]m into the substrate, as well as boron marker layers positioned 0.50 [.proportional]m below the surface. The boron well concentrations are as follows: 0, 7.5×1018, 1.5×1019, and 5.0×1019 atoms/cm3. The boron marker layers are approximately 3 nm wide and have a peak concentration of 5×1018 atoms/cm3. Samples were ion implanted with 60 keV Si+ at a dose of 1×1014 atoms/cm2 and subsequently annealed at 675°C and 750°C for various times. Plan-view Transmission Electron Microscopy (PTEM) was used to monitor the agglomeration of injected silicon interstitials and the evolution of extended defects in the near surface region. Secondary Ion Mass Spectroscopy (SIMS) concentration profiles facilitated the characterization of boron diffusion behaviors during annealing. Interstitial supersaturation conditions and the resultant defect structures of ion implanted relaxed Si0.8Ge0.2 in both the presence and absence of boron have been characterized.

Impurity Activation in N+ Ion-Implanted 6H-SiC with Pulsed Laser Annealing Method

2000 ◽  
Vol 640 ◽  
Author(s):  
O. Eryu ◽  
K. Aoyama ◽  
K. Abe ◽  
K. Nakashima
Keyword(s):  
Contact Resistance ◽  
Laser Irradiation ◽  
Carrier Density ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Surface Region ◽  
Near Surface ◽  
Pulsed Laser Annealing ◽  
Annealing Method ◽  
Ion Implanted

ABSTRACTWe have succeeded in pulsed laser annealing of N+ ion-implanted n-type 6H-SiC for increasing the carrier density near surface in order to decrease contact resistance, which induces little redistribution of implanted impurities after laser irradiation. By repeated laser irradiation at low energy density, the ion–implanted impurities were electrically activated without melting the surface region. SiC substrates with impurity concentration of 2×1018 /cm3 were implanted with 30 keV N+ ions with dose of 4.7×1013/cm2. After pulsed laser annealing, a contact resistance was measured to be 5.7×10−5 Ωcm2 using Al electrode on the N+ -implanted layer.

Photoluminescence and Raman Spectroscopy Studies of H+ Ion Implanted SOI Structures Formed by Hydrogen Ion Slicing

2001 ◽  
Vol 667 ◽  
Author(s):  
Vladimir P. Popov ◽  
Ida E. Tyschenko ◽  
Konstantin S. Zhuravlev ◽  
Ivan I. Morosov
Keyword(s):  
Raman Spectroscopy ◽  
Silicon Film ◽  
Hydrogen Ion ◽  
Furnace Annealing ◽  
Annealing Conditions ◽  
Si Nanocrystals ◽  
Heat Treated ◽  
Amorphous Si ◽  
Spectroscopy Studies ◽  
Ion Implanted

ABSTRACTH+ ion implanted SOI structures formed by hydrogen ion slicing have been investigated by Raman spectroscopy and photoluminescence (PL). After implantation the wafers have been heat-treated by either furnace annealing (FA) or rapid thermal annealing (RTA). It has been found that implantation of 3 × 1017 H+/cm2 results in the formation of the amorphous Si layer (a-Si) inside silicon film on insulator. Structural transformations in a-Si depended on the annealing conditions. FA led to crystallization of a-Si and to the formation of monocrystalline silicon films. RTA results in the formation of the layers containing a high density of Si nanocrystals. A comparison of the Raman measurements with the PL data allows to conclude that PL bands obtained near 420 and 500 nm are not associated with the radiative recombination in Si nanocrystals.

Effect of Annealing upon Retention of He and H in Irradiated SiC

2016 ◽  
Vol 879 ◽  
pp. 810-814 ◽  
Author(s):  
Mihail Ionescu ◽  
Alec Deslandes ◽  
Rohan Holmes ◽  
Mathew C. Guenette ◽  
Inna Karatchevtseva ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Raman Spectroscopy ◽  
Surface Region ◽  
Elastic Recoil ◽  
Elastic Recoil Detection Analysis ◽  
Near Surface ◽  
Elastic Recoil Detection ◽  
Detection Analysis ◽  
Damage States ◽  
Disordered Carbon

Silicon carbide (3C-β SiC) samples were irradiated with He ions of energy up to 30 keV and a fluence up to 1016/cm2, to produce damage in the near-surface region. A duplicate set of He ion irradiated SiC samples, as well as undamaged SiC, were also irradiated with H2+ ions of energy up to 20 keV and a similar fluence, to study the interaction of H species with pristine SiC and with He radiation-damaged SiC. Samples were annealed in steps of 200 K, from 473 K to 1273 K, and the retention of H and He were measured using elastic recoil detection analysis with 7.8 MeV C3+ ions, after each anneal step. Modification to the surface following irradiation is observed via Raman spectroscopy, which exhibits development of damage states such as disordered carbon and Si-Si peaks. Only minor changes in the H and He profiles were observed up to 1073 K, however after the 1273 K anneal the H and He profiles changed considerably, with a marked difference between samples irradiated only with He and those irradiated with He and H.

A technique to prepare cross-sectional TEM specimens of semiconducting devices

1986 ◽  
Vol 44 ◽  
pp. 742-743
Author(s):  
A. K. Rai ◽  
P. P. Pronko
Keyword(s):  
Thin Films ◽  
Surface Region ◽  
Sample Surface ◽  
Specific Region ◽  
Cross Sectional ◽  
Thin Sections ◽  
The Past ◽  
Device Structures ◽  
Ion Implanted

Several techniques have been reported in the past to prepare cross(x)-sectional TEM specimen. These methods are applicable when the sample surface is uniform. Examples of samples having uniform surfaces are ion implanted samples, thin films deposited on substrates and epilayers grown on substrates. Once device structures are fabricated on the surfaces of appropriate materials these surfaces will no longer remain uniform. For samples with uniform surfaces it does not matter which part of the surface region remains in the thin sections of the x-sectional TEM specimen since it is similar everywhere. However, in order to study a specific region of a device employing x-sectional TEM, one has to make sure that the desired region is thinned. In the present work a simple way to obtain thin sections of desired device region is described.

Preparation of cross-sectional samples for near-surface TEM studies

1987 ◽  
Vol 45 ◽  
pp. 380-381
Author(s):  
R.C. Dickenson ◽  
K.R. Lawless
Keyword(s):  
Standard Sample ◽  
Surface Region ◽  
Specimen Preparation ◽  
Thick Sheet ◽  
Drill Bit ◽  
Sample Holder ◽  
Metal Interface ◽  
Cross Sectional ◽  
Near Surface ◽  
Cold Worked

In thermal oxidation studies, the structure of the oxide-metal interface and the near-surface region is of great importance. A technique has been developed for constructing cross-sectional samples of oxidized aluminum alloys, which reveal these regions. The specimen preparation procedure is as follows: An ultra-sonic drill is used to cut a 3mm diameter disc from a 1.0mm thick sheet of the material. The disc is mounted on a brass block with low-melting wax, and a 1.0mm hole is drilled in the disc using a #60 drill bit. The drill is positioned so that the edge of the hole is tangent to the center of the disc (Fig. 1) . The disc is removed from the mount and cleaned with acetone to remove any traces of wax. To remove the cold-worked layer from the surface of the hole, the disc is placed in a standard sample holder for a Tenupol electropolisher so that the hole is in the center of the area to be polished.

Preparation of Backthinned Ceramic Specimens

1985 ◽  
Vol 43 ◽  
pp. 182-183
Author(s):  
A. T. Fisher ◽  
P. Angelini
Keyword(s):  
Electron Microscopy ◽  
Analytical Electron Microscopy ◽  
Vacuum System ◽  
Back Surface ◽  
Surface Microstructure ◽  
Ion Milling ◽  
Near Surface ◽  
Depth Profiles ◽  
Analytical Electron ◽  
Ion Implanted

Analytical electron microscopy (AEM) of the near surface microstructure of ion implanted ceramics can provide much information about these materials. Backthinning of specimens results in relatively large thin areas for analysis of precipitates, voids, dislocations, depth profiles of implanted species and other features. One of the most critical stages in the backthinning process is the ion milling procedure. Material sputtered during ion milling can redeposit on the back surface thereby contaminating the specimen with impurities such as Fe, Cr, Ni, Mo, Si, etc. These impurities may originate from the specimen, specimen platform and clamping plates, vacuum system, and other components. The contamination may take the form of discrete particles or continuous films [Fig. 1] and compromises many of the compositional and microstructural analyses. A method is being developed to protect the implanted surface by coating it with NaCl prior to backthinning. Impurities which deposit on the continuous NaCl film during ion milling are removed by immersing the specimen in water and floating the contaminants from the specimen as the salt dissolves.

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