The Electrical Characteristics of the MOSCAP Structures with W/WNx/poly Si1−XGeX Gates Stack

ABSTRACTPoly Si1−xGex films have been suggested as a promising alternative to the currently employed poly-Si gate electrode for CMOS technology due to lower resistivity, less boron penetration, and less gate depletion effect than those of poly Si gates. We investigated the formation of poly Si1−xGex films grown by UHV CVD using Si2H6 and GeH4 gases, and studied their microstructures as well as their electrical characteristics. The Ge content of the Si1−xGex films increased linearly with the flux of the GeH4 gas up to x=0.3, and saturated above x=0.45. The deposition rate of the poly Si1−xGex films increased linearly with the flux of the GeH4 gas up to x=0.1, above which it is slightly changed. The resistivity of the Si1−xGex films decreased as the Ge content increased, and was about one half of that of poly-Si films at the Ge content of 45%. The C-V measurements of the MOSCAP structures with poly Si1−xGex gates demonstrated that the flat band voltage of the poly Si1−xGex films was lower than that of poly-Si films by 0.2V.

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A Comparison of Mos Devices with In-Situ Boron Doped Polysilicon and Poly Sige Gates Deposited in an Rtcvd System Using S12H6 and B2H6 Gas Mixture

MRS Proceedings ◽

10.1557/proc-525-207 ◽

1998 ◽

Vol 525 ◽

Author(s):

M. R. Mirabedini ◽

V. Z-Q Li ◽

A. R. Acker ◽

R. T. Kuehn ◽

D. Venables ◽

...

Keyword(s):

Flat Band ◽

Gas Mixture ◽

Mos Capacitors ◽

Mos Devices ◽

Boron Doped ◽

Depletion Effect ◽

Polysilicon Films ◽

Sims Analysis ◽

Boron Penetration

ABSTRACTIn this work, in-situ doped polysilicon and poly-SiGe films have been used as the gate material for the fabrication of MOS devices to evaluate their respective performances. These films were deposited in an RTCVD system using a Si2H6 and GeH4 gas mixture. MOS capacitors with 45 Å thick gate oxides and polysilicon/poly-SiGe gates were subjected to different anneals to study boron penetration. SIMS analysis and flat band voltage measurements showed much lower boron penetration for devices with poly-SiGe gates than for devices with polysilicon gates. In addition, C-V measurements showed no poly depletion effects for poly-SiGe gates while polysilicon gates had a depletion effect of about 8%. A comparison of resistivities of these films showed a low resistivity of 1 mΩ-cm for poly-SiGe films versus 3 mΩ-cm for polysilicon films after an anneal at 950 °C for 30 seconds.

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Angle-Resolved Photoemission Study of The Electronic Structures of Auai1 and Ptga2

MRS Proceedings ◽

10.1557/proc-524-179 ◽

1998 ◽

Vol 524 ◽

Cited By ~ 4

Author(s):

L.-S. Hsu ◽

J. D. Denlinger ◽

J. W. Allen

Keyword(s):

Flat Band ◽

Gate Oxides ◽

Mos Capacitors ◽

Mos Devices ◽

Depletion Effect ◽

Polysilicon Films ◽

Sims Analysis ◽

Photoemission Study ◽

Boron Penetration

ABSTRACTIn this work, in-situ doped polysilicon and poly-SiGe films have been used as the gate material for the fabrication of MOS devices to evaluate their respective performances. These films were deposited in an RTCVD system using a Si2H6 and GeH4 gas mixture. MOS capacitors with 45 Å thick gate oxides and polysilicon/poly-SiGe gates were subjected to different anneals to study boron penetration. SIMS analysis and flat band voltage measurements showed much lower boron penetration for devices with poly-SiGe gates than for devices with polysilicon gates. In addition, C-V measurements showed no poly depletion effects for poly-SiGe gates while polysilicon gates had a depletion effect of about 8%. A comparison of resistivities of these films showed a low resistivity of 1 mΩ-cm for poly-SiGe films versus 3 mΩ-cm for polysilicon films after an anneal at 950 °C for 30 seconds.

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Flat-band voltage shifts in p-MOS devices caused by carrier activation in p/sup +/-polycrystalline silicon and boron penetration

International Electron Devices Meeting. IEDM Technical Digest ◽

10.1109/iedm.1997.650462 ◽

2002 ◽

Cited By ~ 12

Author(s):

T. Aoyama ◽

K. Suzuki ◽

H. Tashiro ◽

Y. Tada ◽

H. Arimoto

Keyword(s):

Polycrystalline Silicon ◽

Flat Band ◽

Flat Band Voltage ◽

Mos Devices ◽

Boron Penetration

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Flat-band Voltage Tunability and No Depletion Effect of Poly-Si Gate CMOS with Nanometer-size Metal Dots at the Poly-Si/Dielectric Interface

10.7567/ssdm.2004.p3-22l ◽

2004 ◽

Author(s):

Hideaki Fujiwara ◽

Masaru Kadoshima ◽

Koji Akiyama ◽

Nobuyuki Mise ◽

Shinji Migita ◽

...

Keyword(s):

Flat Band ◽

Flat Band Voltage ◽

Dielectric Interface ◽

Nanometer Size ◽

Depletion Effect

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Electrical Characteristics of Ni-CNT-SiO2-SiC Structured 4H-SiC MIS Capacitors

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2015.11159 ◽

2015 ◽

Vol 15 (10) ◽

pp. 7542-7545

Author(s):

Taeseop Lee ◽

Min-Seok Kang ◽

Tae-Jun Ha ◽

Sang-Mo Koo

Keyword(s):

Gate Insulator ◽

Flat Band ◽

Electrical Characteristics ◽

Flat Band Voltage ◽

Voltage Shift ◽

Insulator Interface ◽

Current Densities ◽

Mis Capacitors

In this study, the electrical characteristics of Ni-CNT-SiO2-SiC structured 4H-SiC MIS capacitors were investigated. The effect of CNTs in the gate/insulator interface have been characterized by C–V measurement at 300 to 500K and J–V have also been measured. The experimental flat-band voltage tends to change with or without CNTs. Current densities of both devices are observed a negligible difference up to 3 V. It has been found that adding CNTs and/or change of temperature can help to control the positive and/or negative flat-band voltage shift.

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