The Physical and Electrical Properties of Polycrystalline Si1−xGex as a Gate Electrode Material for ULSI CMOS Structures

2000 ◽  
Vol 611 ◽  
Author(s):  
Sung-Kwan Kang ◽  
Dae-Hong Ko ◽  
Tae-Hang Ahn ◽  
Moon-Sik Joo ◽  
In-Seok Yeo ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Flat Band ◽  
Electrical Characteristics ◽  
Flat Band Voltage ◽  
Gate Electrode ◽  
Promising Alternative ◽  
Depletion Effect ◽  
Si Films ◽  
Boron Penetration ◽  
Lower Resistivity

ABSTRACTPoly Si1−xGex films have been suggested as a promising alternative to the currently employed poly-Si gate electrode for CMOS technology due to lower resistivity, less boron penetration, and less gate depletion effect than those of poly Si gates. We investigated the formation of poly Si1−xGex films grown by UHV CVD using Si2H6 and GeH4 gases, and studied their microstructures as well as their electrical characteristics. The Ge content of the Si1−xGex films increased linearly with the flux of the GeH4 gas up to x=0.3, and saturated above x=0.45. The deposition rate of the poly Si1−xGex films increased linearly with the flux of the GeH4 gas up to x=0.1, above which it is slightly changed. The resistivity of the Si1−xGex films decreased as the Ge content increased, and was about one half of that of poly-Si films at the Ge content of 45%. The C-V measurements of the MOSCAP structures with poly Si1−xGex gates demonstrated that the flat band voltage of the poly Si1−xGex films was lower than that of poly-Si films by 0.2V.

The Electrical Characteristics of the MOSCAP Structures with W/WNx/poly Si1−XGeX Gates Stack

2001 ◽  
Vol 670 ◽  
Author(s):  
S.-K. Kang ◽  
J. J. Kim ◽  
D.-H. Ko ◽  
T. H. Ahn ◽  
I. S. Yeo ◽  
...  
Keyword(s):  
Leakage Current ◽  
Low Frequency ◽  
Current Level ◽  
Flat Band ◽  
Electrical Characteristics ◽  
Flat Band Voltage ◽  
Dopant Activation ◽  
Depletion Effect ◽  
Activation Rate ◽  
Boron Penetration

ABSTRACTWe investigated the electrical characteristics of the MOSCAP structures with W/WNx/poly Si1−xGex gates stack using C-V and I-V. The low frequency C-V measurements demonstrated that the flat band voltage of the W/WNx /poly Si0.4Ge0.6 stack was lower than that of W/ WNx /poly Si0.2Ge0.8 stack by 0.3V, and showed less gate-poly-depletion-effect than that of W/ WNx /poly- Si0.2Ge0.8 gates due to the increase of dopant activation rate with the increase of Ge content in the poly Si1−xGex films. As Ge content in poly Si1−xGex increased, the leakage current level increased a little due to the increase of direct tunneling and QBD became higher due to the lower boron penetration.

A Comparison of Mos Devices with In-Situ Boron Doped Polysilicon and Poly Sige Gates Deposited in an Rtcvd System Using S12H6 and B2H6 Gas Mixture

1998 ◽  
Vol 525 ◽  
Author(s):  
M. R. Mirabedini ◽  
V. Z-Q Li ◽  
A. R. Acker ◽  
R. T. Kuehn ◽  
D. Venables ◽  
...  
Keyword(s):  
Flat Band ◽  
Gas Mixture ◽  
Mos Capacitors ◽  
Mos Devices ◽  
Boron Doped ◽  
Depletion Effect ◽  
Polysilicon Films ◽  
Sims Analysis ◽  
Boron Penetration

ABSTRACTIn this work, in-situ doped polysilicon and poly-SiGe films have been used as the gate material for the fabrication of MOS devices to evaluate their respective performances. These films were deposited in an RTCVD system using a Si2H6 and GeH4 gas mixture. MOS capacitors with 45 Å thick gate oxides and polysilicon/poly-SiGe gates were subjected to different anneals to study boron penetration. SIMS analysis and flat band voltage measurements showed much lower boron penetration for devices with poly-SiGe gates than for devices with polysilicon gates. In addition, C-V measurements showed no poly depletion effects for poly-SiGe gates while polysilicon gates had a depletion effect of about 8%. A comparison of resistivities of these films showed a low resistivity of 1 mΩ-cm for poly-SiGe films versus 3 mΩ-cm for polysilicon films after an anneal at 950 °C for 30 seconds.

Angle-Resolved Photoemission Study of The Electronic Structures of Auai1 and Ptga2

1998 ◽  
Vol 524 ◽  
Author(s):  
L.-S. Hsu ◽  
J. D. Denlinger ◽  
J. W. Allen
Keyword(s):  
Flat Band ◽  
Gate Oxides ◽  
Mos Capacitors ◽  
Mos Devices ◽  
Depletion Effect ◽  
Polysilicon Films ◽  
Sims Analysis ◽  
Photoemission Study ◽  
Boron Penetration

ABSTRACTIn this work, in-situ doped polysilicon and poly-SiGe films have been used as the gate material for the fabrication of MOS devices to evaluate their respective performances. These films were deposited in an RTCVD system using a Si2H6 and GeH4 gas mixture. MOS capacitors with 45 Å thick gate oxides and polysilicon/poly-SiGe gates were subjected to different anneals to study boron penetration. SIMS analysis and flat band voltage measurements showed much lower boron penetration for devices with poly-SiGe gates than for devices with polysilicon gates. In addition, C-V measurements showed no poly depletion effects for poly-SiGe gates while polysilicon gates had a depletion effect of about 8%. A comparison of resistivities of these films showed a low resistivity of 1 mΩ-cm for poly-SiGe films versus 3 mΩ-cm for polysilicon films after an anneal at 950 °C for 30 seconds.

Flat-band Voltage Tunability and No Depletion Effect of Poly-Si Gate CMOS with Nanometer-size Metal Dots at the Poly-Si/Dielectric Interface

2004 ◽  
Author(s):  
Hideaki Fujiwara ◽  
Masaru Kadoshima ◽  
Koji Akiyama ◽  
Nobuyuki Mise ◽  
Shinji Migita ◽  
...  
Keyword(s):  
Flat Band ◽  
Flat Band Voltage ◽  
Dielectric Interface ◽  
Nanometer Size ◽  
Depletion Effect

Electrical Characteristics of Ni-CNT-SiO2-SiC Structured 4H-SiC MIS Capacitors

2015 ◽  
Vol 15 (10) ◽  
pp. 7542-7545
Author(s):  
Taeseop Lee ◽  
Min-Seok Kang ◽  
Tae-Jun Ha ◽  
Sang-Mo Koo
Keyword(s):  
Gate Insulator ◽  
Flat Band ◽  
Electrical Characteristics ◽  
Flat Band Voltage ◽  
Voltage Shift ◽  
Insulator Interface ◽  
Current Densities ◽  
Mis Capacitors

In this study, the electrical characteristics of Ni-CNT-SiO2-SiC structured 4H-SiC MIS capacitors were investigated. The effect of CNTs in the gate/insulator interface have been characterized by C–V measurement at 300 to 500K and J–V have also been measured. The experimental flat-band voltage tends to change with or without CNTs. Current densities of both devices are observed a negligible difference up to 3 V. It has been found that adding CNTs and/or change of temperature can help to control the positive and/or negative flat-band voltage shift.

Electrical and Material Evaluation of the MOCVD TiN as Metal Gate Electrode for Advanced CMOS Technology

2006 ◽  
Vol 917 ◽  
Author(s):  
Raghunath Singanamalla ◽  
Judit Lisoni ◽  
Isabelle Ferain ◽  
Olivier Richard ◽  
Laure Carbonell ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Chemical Vapor ◽  
Cmos Technology ◽  
Flat Band ◽  
Thickness Variation ◽  
Organic Chemical ◽  
Gate Electrode ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function

AbstractThe electrical and material characterization of Ti(C)N deposited by metal organic chemical vapor deposition (MOCVD) technique, as metal gate electrode for advanced CMOS technology is investigated. The effects of the plasma treatment, post anneal treatment and the thickness variation of the Ti(C)N film on the flat band voltage (VFB) and effective work function (WF) of the Poly-Si/Ti(C)N/SiO2 Poly-Si/Ti(C)N/SiO2 gate stack s are reported. We found that both the in-situ plasma treatment and post anneal treatment help in reducing the carbon content (organic) in the film making it more metallic compared to the as-deposited films. However, the post anneal treatment was found to be a better option for getting rid of hydrocarbons as compared to plasma treatment from the gate dielectric integrity point of view. The thickness variation of post annealed Ti(C)N film ranged from 2.5 nm to 10 nm lead to WF shift of upto ~350 mV for both Poly-Si/Ti(C)N/SiO2 and Poly-Si/Ti(C)N/HfO2 gate stacks.

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