Silicide Formation by Pulsed Excimer Laser Annealing

2001 ◽  
Vol 685 ◽  
Author(s):  
Connie Lew ◽  
Michael O. Thompson
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Interface Reaction ◽  
Silicide Formation ◽  
Metal Interface ◽  
Excimer Laser Annealing ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Si Films

AbstractSilicide formation may occur at the interface of metal and a-Si films upon annealing with a pulsed excimer laser (XeCl 308 nm; 30 ns). During laser-induced melting, the melt front reaches the Si/metal interface, where liquid phase kinetics allow reaction to occur to form a silicide, despite the <100 ns time-scale. It is thought that silicide reaction would occur if TM, metal ≍ TM, a-Si (1480 ± 50K). The a-Si/metal film stacks that have been investigated include a-Si/Al/Cr, a-Si/Ti, and a-Si/W on thermally oxidized Si. Samples were laser-annealed at varying energy densities in order to determine the onset of melt, and the fluence at which Si/metal interface reaction and film ablation occurs. Rutherford backscattering (RBS), optical inspection, cross-sectional scanning transmission electron microscopy (STEM), as well as parallel and serial electron energy loss spectroscopy (EELS) were used to analyze the films. For the a-Si/Al/Cr and a-Si/W films, no reaction is observed at the Si/metal interface. With a-Si/Ti, intermixing of Si and Ti at the interface is observed, as indicated by RBS and parallel EELS analysis. Laser annealing at higher fluences and further characterization is needed to determine if this mechanism does allow for silicide reaction to take place.

Intensity-Modulated Excimer Laser Annealing to Obtain (001) Surface-Oriented Poly-Si Films on Glass: Molecular Dynamics Study

2008 ◽  
Author(s):  
Norie Matsubara ◽  
Tomohiko Ogata ◽  
Takanori Mitani ◽  
Shinji Munetoh ◽  
Teruaki Motooka
Keyword(s):  
Molecular Dynamics ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Intensity Modulated ◽  
Si Films

Large-Grain Doped Poly-Si Films Fabricated Using New Excimer Laser Annealing Technique

1992 ◽  
Vol 283 ◽  
Author(s):  
Hiroshi Iwata ◽  
Tomoyuki Nohda ◽  
Satoshi Ishida ◽  
Takashi Kuwahara ◽  
Keiichi Sano ◽  
...  
Keyword(s):  
Grain Size ◽  
Sheet Resistance ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Solidification Velocity ◽  
Excimer Laser Annealing ◽  
Arf Excimer Laser ◽  
Si Films

ABSTRACTThe grain size of phosphorous (P)-doped poly-Si film has been enlarged to about 5000 Å by controlling the solidification velocity of molten Si during ArF excimer laser annealing. The drastically enlarged grain has few defects inside the grain. It has been confirmed that control of the solidification velocity is effective for P-doped poly-Si similar to the case of non-doped poly-Si films. In addition, a sheet resistance of 80 Ω/□ (ρ = 4 × 10-4 Ω · cm) has been achieved for very thin (500 Å) films by recrystallizing PECVD P-doped a-Si films.

Low-Temperature Polycrystalline Silicon Thin-Film Transistors and Circuits on Flexible Substrates

MRS Bulletin ◽  
2006 ◽  
Vol 31 (6) ◽  
pp. 461-465 ◽  
Author(s):  
P.C. van der Wilt ◽  
M.G. Kane ◽  
A.B. Limanov ◽  
A.H. Firester ◽  
L. Goodman ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Defect Density ◽  
Solid Phase ◽  
Flexible Substrates ◽  
Full Potential ◽  
Laser Crystallization ◽  
Silicon Thin Film ◽  
Excimer Laser Annealing ◽  
Si Films

AbstractLow-defect-density polycrystalline Si on flexible substrates can be instrumental in realizing the full potential of macroelectronics. Direct deposition or solid-phase crystallization techniques are often incompatible with polymers and produce materials with high defect densities. Excimer-laser annealing is capable of producing films of reasonable quality directly on polymer and metallic substrates. Sequential lateral solidification (SLS) is an advanced pulsed-laser-crystallization technique capable of producing Si films on polymers with lower defect density than can be obtained via excimer-laser annealing. Circuits built directly on polymers using these SLS films show the highest performance reported to date.

Crystallinity Improvement of Small Grained Poly-Si Films by Excimer Laser Annealing for High Performance TFT's

1991 ◽  
Author(s):  
Takashi Noguchi ◽  
Hironori Tsukamoto ◽  
Toshiharu Suzuki ◽  
Haruko Masuya
Keyword(s):  
Excimer Laser ◽  
High Performance ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Si Films

A Novel Excimer Laser Crystallization Method of Poly-Si Thin Film by Grid Line Electron Beam Irradiation

1999 ◽  
Vol 557 ◽  
Author(s):  
C-M Park ◽  
M-C Lee ◽  
J-H Jeon ◽  
M-K Han
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Ion Beam ◽  
Growth Effect ◽  
Beam Irradiation ◽  
Laser Crystallization ◽  
Excimer Laser Annealing ◽  
Transmission Electron ◽  
Si Thin Film

AbstractExcimer laser annealing technique is proposed to increase the grain size and controlling the microstructure of polycrystalline silicon (poly-Si) thin film. Our method is based on the lateral grain growth during laser annealing. Our specific grid ion beam irradiation method was designed to maximize the lateral growth effect and arrange the location of grain boundaries. We observed well-arranged poly-Si grains up to micrometer order by transmission electron microscopy (TEM).

Experimental Analysis for Low-Temperature Poly-Si Films Produced by Using the Excimer Laser Annealing Method

2006 ◽  
Vol 505-507 ◽  
pp. 277-282 ◽  
Author(s):  
Yu Ru Chen ◽  
Long Sun Chao
Keyword(s):  
Grain Size ◽  
Excimer Laser ◽  
Glass Substrate ◽  
Laser Annealing ◽  
Pulse Number ◽  
Sio2 Layer ◽  
Excimer Laser Annealing ◽  
Melt Pool ◽  
Si Films ◽  
Annealing Method

This paper is to investigate the effects on grain size of different working conditions for making poly Si films by using the excimer laser annealing method. In this research, a KrF excimer laser of 248 nm in wavelength is used to irradiate a-Si films of 0.1 μm in thickness on glass substrate to produce poly-Si ones. The control parameters are laser intensity (200~500 mJ/cm2), pulse number (1~10 shots) and coverage fraction (0~100%). Besides, the effect of a SiO2 layer is also studied, which is utilized as a heat-isolated zone located between the Si film and glass substrate. Average grain sizes from SEM photos are used to analyze the effects of these parameters. Purely from the heat transfer view, the Si film obtains more energy would have the slower cooling or solidification rate, which results in the larger grain. From the experimental results, if the melt pool is within the range of Si film or does not contact its neighboring layer (SiO2 layer or glass substrate), the more absorbed energy from the higher energy intensity, the larger pulse number or the bigger coverage fraction can have the larger average grain size. However, with large enough energy, the melt pool could go through the Si film and touch the lower layer. This would induce much more nuclei due to the homogeneous nucleation in the pool and the heterogeneous nucleation near the interface between the film and the neighboring layer. The resulting grain size is much smaller than that of the former one. The transition points of these two cases for different control parameters can be obtained from the experimental results in this study. When the energy from the laser is small, the SiO2 layer acts like a heat absorber and makes the grain size smaller than that of not having the SiO2 layer. On the other hand, when the energy is large, the SiO2 layer becomes a heat insulator and makes the grain size larger.

Comprehensive Study of Lateral Grain Growth in Poly-Si Films by Excimer Laser Annealing and Its Application to Thin Film Transistors

1994 ◽  
Vol 33 (Part 1, No. 10) ◽  
pp. 5657-5662 ◽  
Author(s):  
Hiroyuki Kuriyama ◽  
Tomoyuki Nohda ◽  
Yoichirou Aya ◽  
Takashi Kuwahara ◽  
Kenichiro Wakisaka ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Growth ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Si Films ◽  
Comprehensive Study

scholarly journals Nickel Silicide Formation Using Excimer Laser Annealing

2012 ◽  
Vol 27 ◽  
pp. 503-509 ◽  
Author(s):  
L. Tous ◽  
J-F Lerat ◽  
T. Emeraud ◽  
R. Negru ◽  
K. Huet ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Nickel Silicide ◽  
Silicide Formation ◽  
Excimer Laser Annealing
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