Surface Modification and Radiation-Induced Segregation

1981 ◽  
Vol 7 ◽  
Author(s):  
L. E. Rehn
Keyword(s):  
Surface Modification ◽  
Surface Modifications ◽  
Ion Bombardment ◽  
Ion Beams ◽  
Surface Alloy ◽  
Near Surface ◽  
Highly Efficient ◽  
Radiation Induced ◽  
Preferential Transport ◽  
Modification Of Materials

ABSTRACTLarge changes in the distributions of alloying components have been observed in a wide variety of alloys during ion bombardment. This metastable, radiation-induced segregation (RIS) results from the preferential transport of alloying components by defect fluxes. Since the number of radiationinduced defects can exceed the number of implanted ions by several orders of magnitude, RIS can be highly efficient in modifying near-surface alloy compositions. In this paper, the general features of RIS are described. Aspects which are pertinent to the modification of materials by ion beams are emphasized. Examples are given of surface modifications which utilize RIS effects.

Study on Al Alloy Surfaces Treated by Ion Beams

2007 ◽  
Vol 561-565 ◽  
pp. 211-214
Author(s):  
Yu Lan Li ◽  
Xiao Dong Peng ◽  
Wei Dong Xie
Keyword(s):  
Corrosion Resistance ◽  
Surface Layer ◽  
Surface Modification ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Ion Beams ◽  
Fatigue Properties ◽  
Al Alloy ◽  
Bending Fatigue ◽  
Beam Parameters

Plasma-enhanced ion beams are used for the surface modification of 2024 Al and 7075 Al alloy samples. The morphology of the treated surface of the samples is examined. The corrosion resistance and bending fatigue properties were measured on the treated and untreated samples. The effects of ion beam parameters are discussed. It is indicated that during the ion bombardment, craters are formed and surface melting is produced on the treated surfaces. The effects of ion beam bombardment are limited to the surface layer of samples. With the ion beam energies used in this study, improved corrosion resistance was obtained from the treated surfaces of the samples.

CLUSTER ION BOMBARDMENT-INDUCED SURFACE DAMAGE OF Si

1996 ◽  
Vol 03 (01) ◽  
pp. 1045-1049 ◽  
Author(s):  
C.E. ASCHERON ◽  
M. AKIZUKI ◽  
J. MATSUO ◽  
Z. INSEPOV ◽  
G.H. TAKAOKA ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Ion Bombardment ◽  
Surface Damage ◽  
Ion Beams ◽  
Near Surface ◽  
Smooth Interface ◽  
Interaction Processes ◽  
Cluster Ion ◽  
Dynamics Simulations ◽  
Cluster Beams

Surface damage of single-crystalline Si caused by irradiation with Ar-ion cluster beams of different energies has been studied in comparison with that caused by Ar-monomer ion beams. The defected layers have been characterized by RBS channeling, XTEM, and ellipsometry. The experimental results are interpreted on the basis of TRIM and molecular dynamics simulations of the interaction processes with the target. It is found that cluster irradiation damages only a very thin near-surface layer which has a smooth interface to the undamaged substrate. Cluster-ion bombardment forms an oxide layer on the surface by the activation of adsorbed O atoms and substrate atoms.

scholarly journals A self-boosting microwave plasma strategy tuned by air pressure for the highly efficient and controllable surface modification of carbon

RSC Advances ◽  
2021 ◽  
Vol 11 (17) ◽  
pp. 9955-9963
Author(s):  
Yanjing Liu ◽  
Jiawei He ◽  
Bing Zhang ◽  
Huacheng Zhu ◽  
Yang Yang ◽  
...  
Keyword(s):  
Surface Modification ◽  
Carbon Fiber ◽  
High Efficiency ◽  
Microwave Plasma ◽  
Air Pressure ◽  
Air Plasma ◽  
Highly Efficient ◽  
Carbon Fiber Cloth

Microwave enabled air plasma was boosted by a carbon fiber cloth (CFC) and used for the high-efficiency surface modification of the CFC, yielding CFCs with tunable contents of oxygen and each O-containing group.

Applications of Energy Beams in Material and Device Processing

1983 ◽  
Vol 23 ◽  
Author(s):  
G.J. Galvin ◽  
L.S. Hung ◽  
J.W. Mayer ◽  
M. Nastasi
Keyword(s):  
Ion Beam ◽  
High Energy ◽  
Ion Beams ◽  
Traditional Role ◽  
Near Surface ◽  
Device Processing ◽  
Composition Modification ◽  
Directed Energy ◽  
Transistor Fabrication

ABSTRACTEnergetic ion beams used outside the traditional role of ion implantation are considered for semiconductor applications involving interface modification for self-aligned silicide contacts, composition modification for formation of buried oxide layers in Si on insulator structures and reduced disorder in high energy ion beam annealing for buried collectors in transistor fabrication. In metals, aside from their use in modification of the composition of near surface regions, energetic ion beams are being investigated for structural modification in crystalline to amorphous transitions. Pulsed beams of photons and electrons are used as directed energy sources in rapid solidification. Here, we consider the role of temperature gradients and impurities in epitaxial growth of silicon.

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