Carrier Separation Effects in Doping Modulated Amorphous Silicon

1986 ◽  
Vol 70 ◽  
Author(s):  
J. Kakalios ◽  
C. C. Tsai ◽  
R. A. Street

ABSTRACTDoping modulated amorphous silicon films have been synthesized which exhibit photoconductivity decay times in excess of 1000 seconds at 78 K. The time and intensity dependence of the photoconductivity is described by a model in which photo-excited charge carriers are spatially separated to separate layers by the built-in pn junction fields and reside in band tail states.

2003 ◽  
Vol 762 ◽  
Author(s):  
J. Whitaker ◽  
P. C. Taylor

AbstractWe report the temperature dependence of the growth and decay of the optically induced electron spin resonance (LESR) on short and long time scales (10-3 s < t < 2500 s). This range of times spans the region between previously published photoluminescence and the LESR data. In addition, we examine the steady-state density of optically excited charge carriers as a function of temperature. These measurements lead to a better understanding of the band tail structure of amorphous silicon as well as the kinetics of the excitation and recombination processes.


1981 ◽  
Vol 42 (C4) ◽  
pp. C4-779-C4-782 ◽  
Author(s):  
F. J. Demond ◽  
G. Müller ◽  
H. Damjantschitsch ◽  
H. Mannsperger ◽  
S. Kalbitzer ◽  
...  

2016 ◽  
Vol 55 (4S) ◽  
pp. 04ES05 ◽  
Author(s):  
Junichi Seto ◽  
Keisuke Ohdaira ◽  
Hideki Matsumura

1970 ◽  
Vol 1 (6) ◽  
pp. 2632-2641 ◽  
Author(s):  
M. H. Brodsky ◽  
R. S. Title ◽  
K. Weiser ◽  
G. D. Pettit

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